60N60C2 DI Search Results

60N60C2 DI Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
60N60C2 Abstract: ixgh60n60c2 Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	PDF	60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1 60N60C2 ixgh60n60c2
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1
IXGR60N60C2 Abstract: No abstract text available Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2
60N60C2 Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1 Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1
60N60C2 Abstract: 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60 Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface IXGR_C2 VCES IC25 VCE(sat) tfi(typ) IXGR_C2D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	PDF	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 728B1 123B1 728B1 065B1 60N60C2 60n60c 60N60C2D ISOPLUS247 PLUS247 60N60
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 Symbol Test Conditions V CES TJ = 25°C to 150°C	Original	PDF	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A
IXGN60N60C2 Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	PDF	60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
60N60C2D1 Abstract: 60N60C2 DI IGBT 60N60C2D1 C9VI Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	PDF	60N60C2 IXGN60N60C2D1 IC110 OT-227B, 2x61-06A 60N60C2D1 60N60C2 DI IGBT 60N60C2D1 C9VI
60N60C2 Abstract: 60N60C2D1 Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	PDF	60N60C2 IXGN60N60C2D1 IC110 OT-227B, 2x61-06A 60N60C2D1
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	PDF	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2