60A1 Search Results

VRM 12.5

Abstract: POLYMER THERMAL Fuse V7NB-60A160
Contextual Info: NON-ISOLATED DC/DC CONVERTERS 12V Input / Programmable Output / 60A VRM 9/10 Compatible V7NB-60A160 • Remote on/off • 2-Wire Remote sense • Optional 5 bit or 6 bit VID schemes o Intel VRM 9.x compatible 1.1V to 1.6V o Intel VRM 10.x compatible 0.8375V to 1.6V

mf200

Contextual Info: Data Display Products Incandescent Lamp # 3S6/5 5ESB 6ESB 6S6 12MB 12PSB 12RB 12RC 17 18 24 24CSB 24E 24ESB 24MB 24PSB 24RB 24RC 24X 28ESB 28MB 28PSB 28RB 28 RC 37 44 46 47 48D 48ESB 48MB 48PSB 48 RB 48RC 52 53 55 56 57 60A1 60MB 60PSB 60RB 60RC 73 74 79

60A193C

Abstract: 58uH
Contextual Info: 6000A Series www.murata-ps.com Surface Mount Power Inductors SELECTION GUIDE FEATURES n RoHS compliant1 n Up to 22A saturation current n 5.8µH to 57.8µH Inductance, L Isat4 A DC Current2 Max. A Order Code 0.1V@100KHz ±10% Max. H 60A582C 60A782C 60A103C

da9160

Abstract: MARKING 124 MSOP-8 LP2967
Contextual Info: DA9160.003 4 September, 2001 0$6  2XWSXWV /'2 9ROWDJH 5HJXODWRU ,& • • • • • • 'XDO 5HJXODWRU  [  P$ 9HU\ /RZ &URVVWDON /RZ 'URSRXW  P9 +LJK 5LSSOH 5HMHFWLRQ  G% /RZ 1RLVH  µ9UPV 6WDEOH ZLWK /RZ 65 2XWSXW &DSDFLWRUV • 6HSDUDWH (QDEOH'LVDEOH &RQWURO

home ups wiring diagram

Abstract: LAYOUT PCB UPS 12V wiring diagram of ups 9 pin to 15 PIN wiring DIAGRAM 12v 60A diagram double coil latching relays pcb Magnetic latching relay
Contextual Info: Magnetic Latching Relay INDUSTRIAL RELAYS RJC1B SERIES DIMENSIONS Unit: mm FEATURES • • • • • High contact load. Low consumption. Pulse driven operation. Strong resistance ability to shock and vibration. High reliability. Long Service life. Optionally single coil, as well as double coil.

6 pin joystick

Abstract: joystick 0-215083-8 joystick switch 60A18-4-020S M17x1 MTMS-108-58-T-S-485
Contextual Info: Optical Encoders SERIES 60A Joystick FEATURES • Optical Encoder, Pushbutton, and Joystick in One Shaft • Long Life, High Reliability • Compatible with CMOS, HCMOS, and TTL Logic • Choices of Cable Length and Termination • Customized Solutions Available

tl741

Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
Contextual Info: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic

DDR266

Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HY5DU121622D
Contextual Info: 512Mb DDR SDRAM HY5DU12822DF P HY5DU121622DF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / May 2007

BYP60A3

Contextual Info: BYP 60A05 . BYP 60A6 BYP 60K05 . BYP 60K6 Silicon Press-Fit-Diodes High-temperature diodes Silizium-Einpreßdioden Hochtemperaturdioden Nominal current – Nennstrom 60 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…600 V Metal press-fit case with plastic cover

Contextual Info: Cologne Chip "3@3 +:77@ 752B?280 8B3=!13B 8B3=73;2585>R^]ca^[[Ta fXcW BCP]S?28X]cTaUPRT P]S DRWX_bd_^ac 9P]dPah! Copyright 1994-2001 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the

vogt S4

Contextual Info: 41D1C855D 863C@39 9C4>"24C 9C4>84<3696?S_^db_\\Ub gYdX CDQ^T@39Y^dUbVQSU Q^T ESXY`ce``_bd Copyright 1994-1999 Cologne Chip Designs GmbH All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice.

Contextual Info: 6000A Series www.murata-ps.com Surface Mount Power Inductors SELECTION GUIDE FEATURES „ RoHS compliant1 „ Up to 22A saturation current „ 5.8 H to 57.8μH Inductance, L Isat4 A DC Current2 Max. A Order Code 0.1V@100KHz ±10% Max. MHz DC Resistance

Contextual Info: ! ""## &C3,8-.#3,8/'8C08+1"82F63 A$ ' 5E7258E352A F9D7E53 B34792A58EA52 CCD97ED58F A 48#4E6B A A%8,:46FE A 5/538/%+6C03 %&%%'ABE52A!3D 2 ABDE2A*A+A157)AA",#-& ./0A1'2'3A-,%,4##A+A560A1'2'3A&'-%",4 /0A7895667956

DDR200

Abstract: DDR266 DDR266A DDR266B DDR333 DDR333 512MB CL2.5
Contextual Info: HY5DU12422B L F HY5DU12822B(L)F HY5DU121622B(L)F 512Mb DDR SDRAM HY5DU12422B(L)F HY5DU12822B(L)F HY5DU121622B(L)F This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: MF1534-01 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N16 Technical Manual S1C60N16 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

stopwatch circuit diagram

Abstract: KCP00 S1C6200C
Contextual Info: MF1527-01 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N15 Technical Manual S1C60N15 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

D60VC60

Abstract: D60VC100 D60VC120 D60VC20 D60VC40 D60VC80
Contextual Info: D60VC20 . D60VC120 D60VC20 . D60VC120 Silicon-Twin-Rectifiers Silizium-Doppeldiode Version 2005-04-26 Nominal current Nennstrom 6.3 Type 21.6±1 10±0.2 0.8 60 A Alternating input voltage Eingangswechselspannung 60.800 V Plastic case with alu-bottom

Contextual Info: High Current Fuses BF1 FUSE RATED 32V Specifications Heat Resistant 94-V0 Thermoplastic Visible melting element Copper alloy, gal. Sn 2 x M5 or M6 bolts, distance 30 mm 4.5 Nm +/- 1Nm 6.0 Nm +/- 1Nm 23A & 30A: 1000A @32 VDC 40A - 150A: 2000A @32 VDC 200A:

Contextual Info: F* /0 (( -2'&-( &#,2&2+" ''0)5A95B BEE0-1CC0 D0)C17501CC5AH081A75A 51CDA5B K00+=9E5AB1;00!=?DC0F9C803C9E50&#39; K00 9780'5A6>A<1=350D0)C175081A75A K004E1=3540029C0$93A>?A>35BB>A0>=CA>;09A3D9C K00(5E5AB50&#39;>;1A9CH0'A>C53C9>=02H0DB5 K00!7=9C9>=0'A>C53C9>=

PC 8591 T SMD

Abstract: VOGT 503 05 010 30 SMD B4H VOGT u3 503 10 vogt 503 02 010 00 vogt 543 BC850C/A2 vogt transformer s3 AD10 AD12
Contextual Info: Cologne Chip 4QdQCXUUd 752B?280 8B3=!13B 8B3=73;2585>R^]ca^[[Ta fXcW BCP]S?28X]cTaUPRT P]S DRWX_bd_^ac 9P]dPah! Copyright 1994-2001 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the

63b46

Abstract: 61B46 SPRU074C 629Ah 610C 610E 611C 612C 612E 614C
Contextual Info: TMS320x281x, 280x DSP Enhanced Controller Area Network eCAN Reference Guide Literature Number: SPRU074C May 2002 − Revised February 2005 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,

DDR200

Abstract: DDR333 DDR400 DDR400B HY5DU121622
Contextual Info: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR200

Abstract: DDR333 DDR400 DDR400B
Contextual Info: 512Mb DDR SDRAM HY5DU12422C L F HY5DU12822C(L)F HY5DU121622C(L)F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

A 6259H

Abstract: 63b46 spru074e 61B46 6290h 6259H 63cf 6250H 631E-6 61a0-61a1h
Contextual Info: TMS320x28xx, 28xxx DSP Enhanced Controller Area Network eCAN Reference Guide Literature Number: SPRU074E May 2002 − Revised October 2006 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any