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    Untitled

    Abstract: No abstract text available
    Text: PowerMOSFET Nch •外観図 P60B6EL OUTLI NE Package：FB t ：mm Uni 6.6 60V60A 2.3 特 長 品名略号 Type No. 煙面実装タイプ 煙低オン抵抗 煙４. ５V駆動 煙低容量 P60B6EL 000000 ロット管理記号（例） Lot Control No. Feat


    Original     		P60B6EL PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOSFET Nch •外観図 P60B6EN OUTLI NE Package：FB t ：mm Uni 6.6 60V60A 2.3 特 長 品名略号 Type No. 煙面実装タイプ 煙低オン抵抗 煙１ ０V駆動 煙低容量 P60B6EN 000000 ロット管理記号（例） Lot Control No. Feat ur


    Original     		P60B6EN PDF

    n-channel, 60v, 60a

    Abstract: TO263-2L mosfet 20v 30A 60a LOGIC N-Channel MOSFET bridge diode 60a power switching ST6006 ST6006S ST6006T220RG ST6006T220TG
    Text: N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A DESCRIPTION The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.


    Original     		ST6006S ST6006 0V/60A ST6006 O-220-3L O-263-2L ST6006S n-channel, 60v, 60a TO263-2L mosfet 20v 30A 60a LOGIC N-Channel MOSFET bridge diode 60a power switching ST6006T220RG ST6006T220TG PDF