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IXYS Corporation IXGT60N60B2 IGBT PT 600V 75A TO-268AA
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DigiKey	IXGT60N60B2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IXGT60N60B2		690		1	1 - 10 - 100 $10.05 1000 $9.27 10000 $9.27	Buy Now
IXYS Corporation IXGH60N60B2 IGBT PT 600V 75A TO-247AD
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DigiKey	IXGH60N60B2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGR60N60B2 IGBT PT 600V 75A ISOPLUS247
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DigiKey	IXGR60N60B2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGR60N60B2D1 IGBT PT 600V 75A ISOPLUS247
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DigiKey	IXGR60N60B2D1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGX60N60B2D1 IGBT PT 600V 75A PLUS247
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DigiKey	IXGX60N60B2D1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IXGX60N60B2D1		43		1	1 - 10 - 100 $27.27 1000 $27.27 10000 $27.27	Buy Now

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60N60B2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	60N60B2D1 IC110 O-264 PLUS247 2x61-06A	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 PLUS247 E153432 IC110 2x61-06A	PDF
60n60b Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A 60n60b PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A	PDF
60N60B2D1 Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1 Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	60N60B2D1 IC110 2x61-06A ixgk60n60b2d1 PLUS247 ixgx60n60b2d1	PDF
60N60B2 Abstract: ixgt60n60b2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	60N60B2 IC110 O-268 60N60B2 ixgt60n60b2	PDF
PLUS247 Abstract: IXGR60N60B2D1 Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A PLUS247 IXGR60N60B2D1	PDF
60n6 Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	60N60B2D1 IC110 2x61-06A 60n6	PDF
Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	60N60B2 IC110 O-268 O-247	PDF
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF