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Abstract: No abstract text available
Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUB60
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Abstract: No abstract text available
Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUA60
30PUA60
20x20x1t
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Untitled
Abstract: No abstract text available
Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUA60
30PUA60
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30PUB60
Abstract: No abstract text available
Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUB60
30PUB60
20x20x1t
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Untitled
Abstract: No abstract text available
Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUA60
30PUA60
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30PUB60
Abstract: No abstract text available
Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUB60
30PUB60
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Abstract: No abstract text available
Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A
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IRG7RC07SDPbF
50/60Hz
EIA-481
EIA-541.
EIA-481.
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igbt based welding machine
Abstract: IRFR12
Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A
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IRG7RC07SDPbF
50/60Hz
EIA-481
EIA-541.
EIA-481.
igbt based welding machine
IRFR12
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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ITO-220AB
Abstract: FMG-06J
Text: FMG-06J Ultra fast Plastic Power Rectifiers VOLTAGE: 600V CURRENT: 6.0A FEATURE ITO-220AB • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes
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FMG-06J
ITO-220AB
O-220
MIL-STD-750,
ITO-220AB
FMG-06J
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150A diode
Abstract: 300V switching transistor QCA150BA60 600v 3a ultra fast recovery diode high hfe transistor E7610
Text: TRANSISTOR MODULE Hi- QCA150BA60 UL;E76102 M QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA150BA60
E76102
QCA150BA60
200ns)
200mA
300mA
150A diode
300V switching transistor
600v 3a ultra fast recovery diode
high hfe transistor
E7610
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diode l2 32 diode
Abstract: STGD6NC60HD
Text: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode
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STGD6NC60HD
diode l2 32 diode
STGD6NC60HD
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FGD3N60UNDF
Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
Text: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us
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FGD3N60UNDF
FGD3N60UNDF
O-252
600v 3a ultra fast recovery diode
GENERAL SEMICONDUCTOR MARKING UJ
3a ultra fast diode
UJ DIODE MARKING
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600v 3a ultra fast recovery diode
Abstract: SF3A 3A6H
Text: SF3A600H Semiconductor Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply 2 Features • Ultra-fast reverse recovery time: trr=30ns Max. 2 1 • Small & compact type SMD package
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SF3A600H
OD-106
SF3A600H
KSD-D6A010-000
600v 3a ultra fast recovery diode
SF3A
3A6H
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Untitled
Abstract: No abstract text available
Text: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F120B
APT7F120S
190ns
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APT7F120B
Abstract: MOSFET 800V 3A 3A, 50V BRIDGE MOSFET 1200v 3a APT7F120S MIC4452
Text: APT7F120B APT7F120S 1200V, 7A, 2.90Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F120B
APT7F120S
190ns
APT7F120B
MOSFET 800V 3A
3A, 50V BRIDGE
MOSFET 1200v 3a
APT7F120S
MIC4452
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3A, 50V BRIDGE
Abstract: 25c016
Text: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F120B
APT7F120S
190ns
APT7F120B
3A, 50V BRIDGE
25c016
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APT7F120B
Abstract: APT7F120S MIC4452 DIODE 240v 3a
Text: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F120B
APT7F120S
190ns
APT7F120B
APT7F120S
MIC4452
DIODE 240v 3a
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APT7F120B
Abstract: APT7F120S MIC4452
Text: APT7F120B APT7F120S 1200V, 7A, 2.90Ω Max, trr ≤190ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F120B
APT7F120S
190ns
APT7F120B
APT7F120S
MIC4452
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QCA150BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE(Hi-β) QCA150BA60 UL;E76102 (M) QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is
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QCA150BA60
E76102
QCA150BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
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stepper motor driver full bridge 6A
Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx
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BTW68/69
BF3506TV
/10TV
BHA/K3012TV
0-55A
00V/35A
000V/35A
L4981A/B
STW/Y/ExNA60
STTAxx06
stepper motor driver full bridge 6A
mosfet 600V 20A
600v 30a IGBT
20NB50
PSO-36
igbt to220
Triac 3a 600v
Motor Driver IC L293D
L298N
IGBT full bridge
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral leled fast recovery diode ( t r r : 200ns). The mounting base of the
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200ns)
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Transistor RKU
Abstract: 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common
Text: PD-2.336 Provisional Data Sheet International IORIRectifier HEXFRED HFA30PA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per Leg Characteristics Units VR Vr r m 600 V lF(AV) 15 A trr (typ) 19 ns Qrr (typ) 80 nC Ir r m 6 A di(rec)M/dt (typ)
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HFA30PA60C
HFA30PA60C
Employ90745
Transistor RKU
200v 3A ultra fast recovery diode
K4M diode
ULTRA fast rectifier diode 30A 200V cathode common
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