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    600V 3A ULTRA FAST RECOVERY DIODE Search Results

    600V 3A ULTRA FAST RECOVERY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    600V 3A ULTRA FAST RECOVERY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PUB60 30PUB60

    Untitled

    Abstract: No abstract text available
    Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PUA60 30PUA60 20x20x1t

    Untitled

    Abstract: No abstract text available
    Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PUA60 30PUA60

    30PUB60

    Abstract: No abstract text available
    Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PUB60 30PUB60 20x20x1t

    Untitled

    Abstract: No abstract text available
    Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PUA60 30PUA60

    30PUB60

    Abstract: No abstract text available
    Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PUB60 30PUB60

    Untitled

    Abstract: No abstract text available
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


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    PDF IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481.

    igbt based welding machine

    Abstract: IRFR12
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


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    PDF IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481. igbt based welding machine IRFR12

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


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    PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


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    PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    ITO-220AB

    Abstract: FMG-06J
    Text: FMG-06J Ultra fast Plastic Power Rectifiers VOLTAGE: 600V CURRENT: 6.0A FEATURE ITO-220AB • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes


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    PDF FMG-06J ITO-220AB O-220 MIL-STD-750, ITO-220AB FMG-06J

    150A diode

    Abstract: 300V switching transistor QCA150BA60 600v 3a ultra fast recovery diode high hfe transistor E7610
    Text: TRANSISTOR MODULE Hi- QCA150BA60 UL;E76102 M QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is


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    PDF QCA150BA60 E76102 QCA150BA60 200ns) 200mA 300mA 150A diode 300V switching transistor 600v 3a ultra fast recovery diode high hfe transistor E7610

    diode l2 32 diode

    Abstract: STGD6NC60HD
    Text: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode


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    PDF STGD6NC60HD diode l2 32 diode STGD6NC60HD

    FGD3N60UNDF

    Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
    Text: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us


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    PDF FGD3N60UNDF FGD3N60UNDF O-252 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING

    600v 3a ultra fast recovery diode

    Abstract: SF3A 3A6H
    Text: SF3A600H Semiconductor Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply 2 Features • Ultra-fast reverse recovery time: trr=30ns Max. 2 1 • Small & compact type SMD package


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    PDF SF3A600H OD-106 SF3A600H KSD-D6A010-000 600v 3a ultra fast recovery diode SF3A 3A6H

    Untitled

    Abstract: No abstract text available
    Text: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    PDF APT7F120B APT7F120S 190ns

    APT7F120B

    Abstract: MOSFET 800V 3A 3A, 50V BRIDGE MOSFET 1200v 3a APT7F120S MIC4452
    Text: APT7F120B APT7F120S 1200V, 7A, 2.90Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    PDF APT7F120B APT7F120S 190ns APT7F120B MOSFET 800V 3A 3A, 50V BRIDGE MOSFET 1200v 3a APT7F120S MIC4452

    3A, 50V BRIDGE

    Abstract: 25c016
    Text: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    PDF APT7F120B APT7F120S 190ns APT7F120B 3A, 50V BRIDGE 25c016

    APT7F120B

    Abstract: APT7F120S MIC4452 DIODE 240v 3a
    Text: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    PDF APT7F120B APT7F120S 190ns APT7F120B APT7F120S MIC4452 DIODE 240v 3a

    APT7F120B

    Abstract: APT7F120S MIC4452
    Text: APT7F120B APT7F120S 1200V, 7A, 2.90Ω Max, trr ≤190ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    PDF APT7F120B APT7F120S 190ns APT7F120B APT7F120S MIC4452

    QCA150BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE(Hi-β) QCA150BA60 UL;E76102 (M) QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


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    PDF QCA150BA60 E76102 QCA150BA60 trr200ns) 95max 110Tab 50msec50sec 100sec50msec

    stepper motor driver full bridge 6A

    Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
    Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx


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    PDF BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 200ns). The mounting base of the


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    PDF 200ns)

    Transistor RKU

    Abstract: 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common
    Text: PD-2.336 Provisional Data Sheet International IORIRectifier HEXFRED HFA30PA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per Leg Characteristics Units VR Vr r m 600 V lF(AV) 15 A trr (typ) 19 ns Qrr (typ) 80 nC Ir r m 6 A di(rec)M/dt (typ)


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    PDF HFA30PA60C HFA30PA60C Employ90745 Transistor RKU 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common