600V 25A ULTRAFAST DIODE APT Search Results

MOSFET 25A 600V

Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
Contextual Info: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power

Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power

APT25GP90BDF1

Abstract: T0-247 T0247 package NF 833
Contextual Info: APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT25GP90BDF1

Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

APT25GP120BDQ1

Abstract: APT25GP120BDQ1G 600V 25A Ultrafast Diode 600V 25A Ultrafast Diode APT APT10078BLL
Contextual Info: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

Contextual Info: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

IC 7476

Abstract: 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet APT25GP90BDQ1
Contextual Info: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching

Contextual Info: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.

IC 7436

Abstract: APT50GP60B2DF2
Contextual Info: APT50GP60B2DF2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT50GP60JDF2

Abstract: APT50G
Contextual Info: APT50GP60JDF2 600V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT10078BLL

Contextual Info: TYPICAL PERFORMANCE CURVES APT25GT120BRDL G 1200V APT25GT120BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT TO -2 47 The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior

D-6020

Abstract: APT25GP90B T0-247
Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

Contextual Info: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

Contextual Info: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high