600V 25A Search Results

Contextual Info: r n o le x WIRE 10 BARRIER K B TERMINAL BLOCKS Series 4HRBi Style Spacing BEAU Terminal Blocks Rating Page .250 10A, 300V 214, 215 61 .250 10A, 300V 216,217 63 .438 25A, 600V 218, 219 .438 25A, 600V 220, 221 .500 45A, 600V 222, 223 69 .325 20A, 300V 224, 225

Contextual Info: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70m max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V

Contextual Info: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V

Contextual Info: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C

APTGV50H60BT3G

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45m max @ Tj = 25°C

Contextual Info: Connector Blocks Series Spacing Style Rating Page C15 .315” 10 A, 250V 12 4 ,1 2 5 C15 .315” 10A, 250V 12 4 ,1 2 5 C 40 .394” 16A, 125 V 12 6 ,1 2 7 .394” 16A, 250V 12 6 ,1 2 7 .472” 25A, 600V 12 8 ,1 2 9 .472” 25A, 600V 12 8 ,1 2 9 .591” 40A, 600V

1000V 20A transistor

Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
Contextual Info: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30

25A 1200V

Abstract: PM100RLA120 PM150CLA120 PM75CLA120 PM75CLA060 PM75CLB120 transistor 600V 75A PM100CLA060 PM150CLA060 PM200CLA060
Contextual Info: Powerex L-Series IPM Grid 7/3/2003 VCES 25A 1200V PM25CLA120 PM25CLB120 600V 1200V Seven-Pack Six-Pack 600V Config *click on the products for additional information PM25RLA120 PM25RLB120 50A 75A 100A 150A 200A 300A PM50CLA060 PM50CLB060 PM75CLA060 PM75CLB060

Contextual Info: SCT25N60FD Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3  Features  Repetitive Peak Off-State Voltage : VDRM=600V

Contextual Info: SCT25N60P Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 „ Features „ Repetitive Peak Off-State Voltage : VDRM=600V

Contextual Info: SCT25N60P Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 y Features y Repetitive Peak Off-State Voltage : VDRM=600V

Contextual Info: SCT25N60FD Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3  Features  Repetitive Peak Off-State Voltage : VDRM=600V

Contextual Info: BUCCANEER 900 Series Buccaneer SPECIFICATION Mechanical: BUCCANEER Electrical: No Poles: 2, 3 4, 5 7 10 Current Rating: 32A 30A, CSA 32A 25A, CSA 32A 10A 25A, CSA* Voltage Rating: 600V ac/dc 600V ac/dc 430V ac/dc 250V ac/dc Contact Resistance: <10mΩ initial

f8gz47

Abstract: F8JZ47 SF8JZ47 SF8GZ47
Contextual Info: SF8GZ47, SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47, SF8JZ47 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V, 600V : VRRM = 400V, 600V Average On−State Current : IT AV = 8A

Contextual Info: R6025FNZ Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

F8JZ47

Abstract: f8gz47 f8gz47 symbol SF8JZ47 SF8GZ47
Contextual Info: SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400, 600V : VRRM = 400, 600V Average On−State Current : IT AV = 8A

SF8j41

Abstract: SF8G41 SF8G41A SF8J41A
Contextual Info: SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 8A

SF8G41A

Abstract: SF8J41A
Contextual Info: SF8G41A, SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A, SF8J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 8A

12n60d1c

Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
Contextual Info: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω

TOSHIBA Thyristor

Abstract: SF8G48 SF8J48 USF8G48 USF8J48
Contextual Info: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage: VDRM=400V,600V Repetitive Peak Reverse Voltage: VRRM=400V,600V Average On-State Current: IT AV =8A

Contextual Info: DESIGN UNITS METRIC nn [INCHES] -4 | P REVISION — 1-FIRST ANGLE PRDJECTIDN REV. DESCRPTIDN DATE [ P BY. J l ECN ND. U IBmaenggannrl DP2 IEC 6 059 4 7 -7 -1 630V 2.5mm*. 600V 25A 22~12AWG I C T \Iw Med. [„ CTInoJ 5.1 NOTES: 1. Rating: UL 600V 25A IEC 630V 24A

SF8G41

Abstract: SF8G41A SF8J41 SF8J41A
Contextual Info: SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 8A