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    600V 16A Search Results

    600V 16A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BCR16FM-12LB#BG0 Renesas Electronics Corporation 600V - 16A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR16RM-12LB#B00 Renesas Electronics Corporation 600V - 16A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR16FM-12LC#BG0 Renesas Electronics Corporation 600V - 16A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR16FM-12LB#BH0 Renesas Electronics Corporation 600V - 16A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR16FR-12LB#BH0 Renesas Electronics Corporation 600V - 16A - Triac Medium Power Use Visit Renesas Electronics Corporation

    600V 16A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STGF12NB60KD

    Abstract: JESD97 STGB12NB60KD STGP12NB60KD
    Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V


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    PDF STGB12NB60KD STGF12NB60KD STGP12NB60KD O-220 O-220FP STGF12NB60KD O-220FP O-220 JESD97 STGB12NB60KD STGP12NB60KD

    st 393

    Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
    Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V


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    PDF STGB12NB60KD STGF12NB60KD STGP12NB60KD O-220 O-220FP STGF12NB60KD O-220FP O-220 st 393 JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS

    f16jz51

    Abstract: SF16GZ51 SF16JZ51 F16GZ51 TOSHIBA THYRISTOR
    Text: SF16GZ51, SF16JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF16GZ51, SF16JZ51 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 16A


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    PDF SF16GZ51, SF16JZ51 SF16GZ51 f16jz51 SF16GZ51 SF16JZ51 F16GZ51 TOSHIBA THYRISTOR

    F16GZ51

    Abstract: f16jz51 SF16JZ51 TOSHIBA THYRISTOR
    Text: SF16GZ51, SF16JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF16GZ51, SF16JZ51 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 16A


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    PDF SF16GZ51, SF16JZ51 SF16GZ51 SF16JZ51 F16GZ51 f16jz51 TOSHIBA THYRISTOR

    Untitled

    Abstract: No abstract text available
    Text: SCT16N60FD Triac 600V, 16A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V


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    PDF SCT16N60FD O-220F-3L SCT16N60 KSD-S0O002-000

    Untitled

    Abstract: No abstract text available
    Text: SCT16N60P Triac 600V, 16A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V


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    PDF SCT16N60P O-220AB-3L SCT16N60 KSD-S0P005-000

    STW16NB60

    Abstract: No abstract text available
    Text: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


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    PDF STW16NB60 O-247 STW16NB60

    mosfet p 30v 8a

    Abstract: STW16NB60
    Text: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


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    PDF STW16NB60 O-247 mosfet p 30v 8a STW16NB60

    STW16NB60

    Abstract: No abstract text available
    Text: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


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    PDF STW16NB60 O-247 STW16NB60

    Untitled

    Abstract: No abstract text available
    Text: PD-96-957 RevD Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMX16UP60B Series 16A, 600V with Internal Shunt Resistor International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as


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    PDF PD-96-957 IRAMX16UP60B IRAMX16UP60B 035-Z2L03 AN-1049

    max 1907

    Abstract: IRAMX16UP60B-2 VB-24V marking R1E AN-1044 AN-1049 IR21363 IRAMX16UP60B PD-96-957 .1k 400V capacitor
    Text: PD-96-957 Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMX16UP60B Series 16A, 600V with Internal Shunt Resistor International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as well


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    PDF PD-96-957 IRAMX16UP60B IRAMX16UP60B 035-Z2L03 AN-1049 max 1907 IRAMX16UP60B-2 VB-24V marking R1E AN-1044 AN-1049 IR21363 PD-96-957 .1k 400V capacitor

    marking R1E

    Abstract: AN-1044 AN-1049 IR21363 IRAMX16UP60B IRAMX16UP60B-2 PD-96-957 application note inverter vac pwm igbt COMPACT hybrid MODULE ic PWM 2000
    Text: PD-96-957 RevD Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMX16UP60B Series 16A, 600V with Internal Shunt Resistor International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as


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    PDF PD-96-957 IRAMX16UP60B IRAMX16UP60B 035-Z2L03 AN-1049 marking R1E AN-1044 AN-1049 IR21363 IRAMX16UP60B-2 application note inverter vac pwm igbt COMPACT hybrid MODULE ic PWM 2000

    IRAMX16UP60B-2

    Abstract: IRAMX16UP60B max 1907 marking R1E PD-96-957 AN-1044 AN-1049 IR21363 max1907
    Text: PD-96-957 RevC Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMX16UP60B Series 16A, 600V with Internal Shunt Resistor International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as


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    PDF PD-96-957 IRAMX16UP60B IRAMX16UP60B 035-Z2L03 AN-1049 IRAMX16UP60B-2 max 1907 marking R1E AN-1044 AN-1049 IR21363 max1907

    RAMX16UP60B

    Abstract: No abstract text available
    Text: PD-96-957 RevD Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMX16UP60B Series 16A, 600V with Internal Shunt Resistor International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as


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    PDF PD-96-957 IRAMX16UP60B IRAMX16UP60B X16UP60B 035-Z2L03 AN-1049 RAMX16UP60B

    r860p2

    Abstract: 860P2
    Text: ISL9R860P2 Data Sheet [ /Title ISL9R 860P2 /Subjec t (8A, 600V Stealth Diode) /Autho r () /Keyw ords (8A, 600V Stealth ™ Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC March 2001


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    PDF ISL9R860P2 860P2) to220ac) ISL9R860P2 r860p2 860P2

    sec irf840

    Abstract: ISL9R860P2 R860P2
    Text: [ /Title ISL9R 860P2 /Subjec t (8A, 600V Stealth Diode) /Autho r () /Keyw ords (8A, 600V Stealth ™ Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC ISL9R860P2 TM Data Sheet September 2000


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    PDF 860P2) to220ac) ISL9R860P2 ISL9R860P2 sec irf840 R860P2

    HTS16-600

    Abstract: No abstract text available
    Text: VDRM HTx16-600 = 600 V 3.Gate IT RMS = 16A 600V 16A TRIAC 2.T2 1.T1 1.T1 2. T2 3. Gate FEATURES ‰ Repetitive Peak Off-State Voltage: 600V ‰ R.M.S On-state Current (IT(RMS)=16A) ‰ High Commutation dv/dt HTP16-600 HTS16-600 General Description The TRIAC HTx16-600 is suitable for AC switching application, phase


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    PDF HTx16-600 HTP16-600 HTS16-600 HTx16-600 50/60Hz, HTS16-600

    Untitled

    Abstract: No abstract text available
    Text: CD8C60SR Sensitive Gate Silicon Controlled Rectifiers Symbol ○ TO-252 2. Anode BVDRM = 600V IT RMS = 8 A ▼ ○ 1.Cathode 3.Gate ITSM = 70A 1 2 ○ 3 Features ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 8 A ) General Description


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    PDF CD8C60SR O-252 O-252

    IXGH48N60A3D1

    Abstract: 48N60A3 48n60 IXGH48N60
    Text: GenX3TM 600V IGBT with Diode IXGH48N60A3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGH48N60A3D1 IC110 O-247 062in. IXGH48N60A3D1 48N60A3 48n60 IXGH48N60

    IXGP48N60A3

    Abstract: IXGH48N60a3 IXGH48N60 IXGA48N60A3
    Text: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 IC110 O-263 IC110 O-220 O-247 48N60A3 0-08-A IXGH48N60a3 IXGH48N60

    600TD

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBTs for up to 5kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 IC110 O-263 O-220 O-247 062in. 48N60A3 0-08-A 600TD

    Untitled

    Abstract: No abstract text available
    Text: Connector Blocks Series Spacing Style Rating Page C15 .315” 10 A, 250V 12 4 ,1 2 5 C15 .315” 10A, 250V 12 4 ,1 2 5 C 40 .394” 16A, 125 V 12 6 ,1 2 7 .394” 16A, 250V 12 6 ,1 2 7 .472” 25A, 600V 12 8 ,1 2 9 .472” 25A, 600V 12 8 ,1 2 9 .591” 40A, 600V


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    PDF

    high frequency plating rectifier using IGBT

    Abstract: No abstract text available
    Text: Data Sheet No. PD -6.026C International IGR Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V V o ffs e t 600V max. Tolerant to negative transient voltage dV/dt immune


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    PDF IR2112 IR2112 IR2112S IRFBC20) IR2112STj IRFBC30) IRFBC40) IRFPE50) high frequency plating rectifier using IGBT

    S11V

    Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
    Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s


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    PDF 5GLZ47A 5JLZ47 1DL41A 1DL42A 1R5DL41A 3DL41A DO-41S DO-15L S11V Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 20L6P45