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    600V 10 AMP MOSFET Search Results

    600V 10 AMP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    600V 10 AMP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MYXMH0600-20CEN

    Abstract: silicon carbide
    Text: SiC MOSFET Half Bridge 600 Volt 20 Amp Hermetic MYXMH0600-20CEN Product Overview Features y r a in Benefits • Essentially no switching losses • High voltage 600V isolation • Higher Efficiency • High current 20A • High temperature 210°C m i l e r


    Original     		MYXMH0600-20CEN MYXMH0600-20CEN silicon carbide PDF

    MYXMN0600-20DA0

    Abstract: silicon carbide smd code diode 20a
    Text: Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 600V isolation in a small package outline • High blocking voltage with low RDS on


    Original     		MYXMN0600-20DA0 210OC MYXMN0600-20DA0 silicon carbide smd code diode 20a PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET D LND090A/B/C/D Revolutionary LF-MCTs Replace MOSFETs, Bipolars & IGBTs In Switching Apps with only 1.9nC Gate Charge GENERAL DESCRIPTION Linear Dimensions introduces the revolutionary Linear Fast MCT LF-MCT . A Linear Dimensions proprietary MCT


    Original     		LND090A/B/C/D 800ns+ O-252 PDF

    NTC 10D-9

    Abstract: FAN7527 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor
    Text: www.fairchildsemi.com Application Note AN4107 Design of Power Factor Correction Using FAN7527 1. Introduction power factor is obtained. The FAN7527 is an active power factor correction PFC controller for boost PFC application which operates in the critical conduction mode. It turns on MOSFET when the


    Original     		AN4107 FAN7527 FAN7527 NTC 10D-9 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor PDF

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


    Original     		NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A PDF

    pj 996 diode

    Abstract: HV9106 48V DC to 12v dc 40 amp converter circuit diagram smps circuit diagram HV9106P 48V DC to 12v dc converter circuit diagram 40 amp amplifier diagram n mosfet depletion 600V A510K HV9106PJ
    Text: HV9106/HV9109 HV9106 HV9109 Preliminary High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +VIN Package Outlines BVDSS RDS ON Min Max Feedback Voltage 600V 20Ω 12V 450V ±1% 49% HV9106P HV9106PJ 600V 20Ω 12V 450V ±1% 99%


    Original     		HV9106/HV9109 HV9106 HV9109 HV9106P HV9106PJ HV9109P HV9109PJ HV9106/09 HV9106/09 pj 996 diode HV9106 48V DC to 12v dc 40 amp converter circuit diagram smps circuit diagram HV9106P 48V DC to 12v dc converter circuit diagram 40 amp amplifier diagram n mosfet depletion 600V A510K HV9106PJ PDF

    application note ir2233j

    Abstract: IR2133 application note IR2133 application notes ir2233j application
    Text: Data Sheet No. PD60107-P IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-P IR2133/IR2135 IR2233/IR2235 0V/12V IR2133IR2135/IR2233I1E IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead application note ir2233j IR2133 application note IR2133 application notes ir2233j application PDF

    ir2233j application

    Abstract: ir2133 IR2133J IR2135 IR2233 IR2235 or1200
    Text: Preliminary Data Sheet No. PD60107-M IR2133 J (S) / IR2135(J)(S) IR2233(J)(S) / IR2235(J)(S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage


    Original     		PD60107-M IR2133 IR2135 IR2233 IR2235 0V/12V IRG4PH40KD) IR2233J IRG4PH50KD) IR2133J ir2233j application or1200 PDF

    application note ir2233j

    Abstract: IR2133J IR2235 ir2233j application IR2133 IR2133 application note
    Text: Data Sheet No. PD60107-Q IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-Q IR2133/IR2135 IR2233/IR2235 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) application note ir2233j IR2235 ir2233j application IR2133 IR2133 application note PDF

    EME-6300

    Abstract: IR2133 IR2233 ir2233j application 600v 20 amp mosfet of IR2233 IR2133J IR2235 MV-CA IR2135
    Text: Preliminary Data Sheet No. PD-6.107-H IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		107-H IR2133 IR2135 IR2233 IR2235 EME-6300 ir2233j application 600v 20 amp mosfet of IR2233 IR2133J IR2235 MV-CA IR2135 PDF

    IR2133

    Abstract: IR2233 ir2233j application IR2133 3 phase IR2235 application note ir2233j IR2133J IRG4PH40KD IR2135 MV-CA IR2135
    Text: Preliminary Data Sheet No. PD60107K IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation · · · · · · Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107K IR2133 IR2135 IR2233 IR2235 0V/12V IR213rature IRG4PH50KD) IR2133J IRG4ZH71KD) ir2233j application IR2133 3 phase IR2235 application note ir2233j IRG4PH40KD IR2135 MV-CA IR2135 PDF

    IRG4PH40KD IR2135

    Abstract: ir2135 irg4p*50kd
    Text: Preliminary Data Sheet No. PD60107-L IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-L IR2133 IR2135 IR2233 IR2235 0V/12V IR21333/IR2135/IR2233/IR2235 IRG4PH40KD) IR2233J IRG4PH50KD) IRG4PH40KD IR2135 irg4p*50kd PDF

    IR2133 application note

    Abstract: No abstract text available
    Text: Data Sheet No. PD60107-R IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-R IR2133/IR2135 IR2233/IR2235 0V/12V IR2133IR2135/IR2233I IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead IR2133 application note PDF

    IR2133

    Abstract: ir2233j application IR2133J IR2233 PD60107-P
    Text: Data Sheet No. PD60107-P IR2133 5 (J&S) IR2233(5) (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-P IR2133 IR2233 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) ir2233j application PD60107-P PDF

    IR2133

    Abstract: IR2135 IR2233 IR2235
    Text: Preliminary Data Sheet No. PD60107J IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107J IR2133 IR2135 IR2233 IR2235 0V/12V The90245 IR2135 IR2235 PDF

    IR2133

    Abstract: IR2133 application note application note ir2233j ir2233j application IR2133 application notes IR2133J
    Text: Data Sheet No. PD60107-S IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-S IR2133/IR2135 IR2233/IR2235 0V/12V IR2233J IRG4PH50KD) IR2133J IRG4ZH71KD) 28-Lead MS-011AB) IR2133 IR2133 application note application note ir2233j ir2233j application IR2133 application notes PDF

    IR2133 application note

    Abstract: No abstract text available
    Text: Data Sheet No. PD60107-T IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-T IR2133/IR2135 IR2233/IR2235 0V/12V IR2133IR2135/IR2233I00V IR2233J IRG4PH50KD) IRG4ZH71KD) 28-Lead IR2133 application note PDF

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams PDF

    CIRCUIT BREAKER AEG me 800

    Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
    Text: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.


    Original     		PDF

    IR2133 application note

    Abstract: ir2233j application application note ir2233j IR2133 application notes IR2133J IRG4PH40KD IR2135 ir2233j IR2133 IRG4PH40K IR2133JPBF
    Text: Data Sheet No. PD60107 revU IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage


    Original     		PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V IR2133 IR2133PbF 28-Lead IR2133S IR2133SPbF IR2133 application note ir2233j application application note ir2233j IR2133 application notes IR2133J IRG4PH40KD IR2135 ir2233j IRG4PH40K IR2133JPBF PDF

    sic marking e6

    Abstract: sic marking e7
    Text: SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT 


    Original     		SPM1002 -700C 2000C 58iconductor. sic marking e6 sic marking e7 PDF

    IR2133 application note

    Abstract: MS-013-AE IR2133 application notes ir2233j application application note ir2233j
    Text: Data Sheet No. PD60107-Q IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune


    Original     		PD60107-Q IR2133/IR2135 IR2233/IR2235 0V/12V IR2133IR2135/IR2233IRectifier IR2235 28-pin 44-lead IR2235J IR2133 application note MS-013-AE IR2133 application notes ir2233j application application note ir2233j PDF

    Untitled

    Abstract: No abstract text available
    Text: HV9106 HV9109 Supertex inc. P re lim in a r y High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +v,N Min Max 16 Pin Plastic DIP 20 Pin Plastic PLCC 600V 20Ì2 12V 450V ±1% 49% HV9106P HV9106PJ 600V 2012 12V 450V ±1% 99% HV9109P


    OCR Scan     		HV9106 HV9109 HV9106P HV9106PJ HV9109P HV9109PJ HV9106 HV9109 HV9106/HV9109 20-pin PDF

    pj 996 diode

    Abstract: hef 1438
    Text: ^ S u p ertex inc. HV9106 HV9109 Preliminary High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch BV DSS p OS<ON +V,H Package Outlines Min Max Feedback Voltage Max Duty Cycle 16 Pin Plastic DIP 20 Pin Plastic PLCC 600V 20£2


    OCR Scan     		HV9106 HV9109 HV9106P HV9109P HV9106PJ HV9109PJ HV9109 HV9106/09 HV9106/HV9109 pj 996 diode hef 1438 PDF