CLC103
Abstract: KH103 KH103AI KH103AK KH103AM LF356 LF356 "direct replacement"
Text: www.fairchildsemi.com KH103 Fast Settling, High Current Wideband Op Amp Features • ■ ■ ■ ■ ■ 80MHz full-power bandwidth 20Vpp, 100Ω 200mA output current 0.4% settling in 10ns 6000V/µs slew rate 4ns rise and fall times (20V) Direct replacement for CLC103
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KH103
80MHz
20Vpp,
200mA
CLC103
KH103
CLC103
KH103AI
KH103AK
KH103AM
LF356
LF356 "direct replacement"
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KH103AI
Abstract: KH103AM CLC103 OP BASEBAND 80MHZ KH103 KH103AK LF356 LF356 "direct replacement"
Text: www.cadeka.com KH103 Fast Settling, High Current Wideband Op Amp Features • ■ ■ ■ ■ ■ 80MHz full-power bandwidth 20Vpp, 100Ω 200mA output current 0.4% settling in 10ns 6000V/µs slew rate 4ns rise and fall times (20V) Direct replacement for CLC103
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KH103
80MHz
20Vpp,
200mA
CLC103
KH103
KH103AI
KH103AM
CLC103
OP BASEBAND 80MHZ
KH103AK
LF356
LF356 "direct replacement"
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Untitled
Abstract: No abstract text available
Text: www.cadeka.com KH103 Fast Settling, High Current Wideband Op Amp Features • ■ ■ ■ ■ ■ 80MHz full-power bandwidth 20Vpp, 100Ω 200mA output current 0.4% settling in 10ns 6000V/µs slew rate 4ns rise and fall times (20V) Direct replacement for CLC103
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KH103
80MHz
20Vpp,
200mA
000V/Â
CLC103
KH103
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NTE398
Abstract: transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3981 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3981
NTE398
transistor VCE 6000V
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NTE3082
Abstract: NPN Darlington transistor transistor VCE 6000V
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.
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NTE3082
NTE3982
NTE3082
NPN Darlington transistor
transistor VCE 6000V
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NTE3081
Abstract: transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3081
transistor VCE 6000V
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transistor VCE 6000V
Abstract: dual infrared diode Infrared Emitting Diode NTE3082
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line
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NTE3082
NTE3082
transistor VCE 6000V
dual infrared diode
Infrared Emitting Diode
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dual infrared transistor
Abstract: dual infrared diode dual Phototransistor NTE3081 transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual−in−line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3081
dual infrared transistor
dual infrared diode
dual Phototransistor
transistor VCE 6000V
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PDF
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Untitled
Abstract: No abstract text available
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line
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NTE3082
NTE3082
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diode R31
Abstract: NPN Transistor 10A 24V AD1P
Text: FS9922-DMM4 Data Sheet Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 1.0 Mar. 2005 Fortune Semiconductor Corp. FS9922-DMM4-DS-10_EN CR-004 FS9922-DMM4 Taipei Office： 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,
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FS9922-DMM4
FS9922-DMM4-DS-10
CR-004
100-pin
diode R31
NPN Transistor 10A 24V
AD1P
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SGCT
Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Text: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H
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CM800HA34H
CM1200HA-
CM1600HC-
CM1800HC34H
CM800HB50H
CM1200HD50H
CM800HB66H
CM1200HB66H
CM400HB-
CM600HB90H
SGCT
mitsubishi SGCT
scr gate driver ic 600 A
igbt types 6000v
MITSUBISHI GATE TURN-OFF THYRISTOR scr
GTO thyristor driver
m57962l
GTO thyristor 1200V 50A
SGCT 400A
NATIONAL IGBT
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PDF
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FS9922-DMM4-DS-11
Abstract: FS9922-DMM4
Text: REV. 1.1 FS9922-DMM4-DS-11_EN Datasheet FS9922-DMM4 Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph SEP 2006 FS9922-DMM4 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,
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FS9922-DMM4-DS-11
FS9922-DMM4
FS9922-DM9
100-pin
FS9922-DMM4
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PDF
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Untitled
Abstract: No abstract text available
Text: AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4423 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is
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AO4423
AO4423
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AO4423
Abstract: ao44
Text: AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4423 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is
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AO4423
AO4423
ao44
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AO4423L
Abstract: No abstract text available
Text: AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4423/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
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AO4423
AO4423/L
AO4423L
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PDF
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Untitled
Abstract: No abstract text available
Text: AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4423 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is
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AO4423
AO4423
AO4423L
AO4423L
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TLP721F
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-TRANSISTOR TLP721F TLP721F OFFICE MACHINE. U nit in mm SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic DIP package. All param eters are tested to the specification of TLP721.
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TLP721F
TLP721F)
TLP721F
TLP721.
UL1577,
E67349
BS415
SS4330784
VDE0884
VDE0804
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PDF
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74286
Abstract: TLP733F VDE0804
Text: GaAs IRED S PHOTO-TRANSISTOR TLP733F, 734F T L P 7 3 3 F OFFICE MACHINE. U n it in mm SW ITCHING POWER SUPPLY. The TOSHIBA TLP733F and TLP734F consists of a photo-transistor nnn optically coupled to a gallium arsenide infrared em ittin g diode in a six lead plastic DIP package.
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TLP733F,
TLP733F
TLP734F
TLP733
TLP734.
UL1577,
E67349
BS415
BS7002
EN60950)
74286
VDE0804
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PDF
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P 721
Abstract: TLP721F
Text: TLP721F GaAs IRED a PHOTO-TRANSISTOR T L P 7 2 1 F OFFICE M ACHINE. SW ITCHING POW ER SUPPLY. The T O S H IB A T L P 7 2 1 F co n sists of a ph oto-tran sistor optically coupled to a g a lliu m arsen id e in frared em ittin g diode in a four lead p la stic D IP p ack age .
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TLP721F
SS4330784
0750T
P 721
TLP721F
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP759F TOSHIBA PHOTOCOUPLER GaAfAs IRED + PHOTO-IC T I P 7 •; Q P ■ ■ m MT V ■ DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The TOSHIBA TLP759F consists of a GaA€As high-output light
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TLP759F
TLP759F
TLP759.
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP250F TOSHIBA PHOTOCOUPLER TENTATIVE GaAMs IRED & PHOTO-IC TLP250F TRANSISTOR INVERTER INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE The Toshiba TLP250F consists of a GaA€As light em itting diode and a integrated photodetector.
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TLP250F
TLP250F
VDE0884/
1140Vpj£
VDE0884
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PDF
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inverter air conditioning toshiba
Abstract: toshiba inverter air conditioning E67349 TLP250F VDE0884 054g
Text: TO SH IBA TLP250F TENTATIVE TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO-IC TLP250F TRANSISTOR INVERTER INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE The Toshiba TLP250F consists of a GaA€As light emitting diode and a integrated photodetector.
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TLP250F
TLP250F
0-35V
2500Vrms
UL1577,
E67349
VDE0884/
1140VpK
inverter air conditioning toshiba
toshiba inverter air conditioning
E67349
VDE0884
054g
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAM s IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA-fAs light em itting diode and a integrated photodetector.
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TLP251F
TLP251F
TLP251
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PDF
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ES1868
Abstract: h24ai H24A1 H24A2 H24A1-H24A2
Text: SOLI» STATE 01 3Ö7SQÖ1 ODnflDfl Optoelectronic Specifications T-Vl-83 Photon Coupled Isolator H24A1-H24A2 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors The GE Solid State H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The
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T-Vl-33
H24A1-H24A2
ES1868
6000v
42COLLECTOR
Tas25Â
ES1868
h24ai
H24A1
H24A2
H24A1-H24A2
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