Untitled
Abstract: No abstract text available
Text: $OSKDQXPHULFDO SURGXFW OLVW DUW QR SDJH DUW QR SDJH DUW QR SDJH DUW QR ,&. 60' $ ,&. 60' % ,&. 60' %2; ,&. 60' & ,&. 60' ,&. 60' ,&. 60' * ,&. 60' + ,&. 60' . ,&. 60' 0 ,. ,. ,6 ,6 ,6 ,6 ,6
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400HB
Abstract: No abstract text available
Text: DPF 60 IM 400HB not released V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns 1 Part number Marking on product 2 DPF 60 IM 400HB 3 Features / Advantages: Applications: Package:
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400HB
O-247AD
60747and
400HB
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BL57
Abstract: 57BL 57BLS54 57BLS116 DPM 42 57BLS94 60VDC BL57-12C-54 speed motor encoder DPM 57BLS54
Text: BL57 24DC TO 60VDC Brushless Drive Dimensions in mm. Specifications Characteristics MODEL BL57-12C-54 BL57-12C-74 BL57-12C-94 BL57-12C-116 DPM MOTOR 57BLS54 57BLS74 57BLS94 57BLS116 24-60 24-60 24-60 24-60 1 SUPPLY 2 RATED VDC VOLTAGE RPM SPEED 3 RATED 4 DIGITAL
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60VDC
BL57-12C-54
BL57-12C-74
BL57-12C-94
BL57-12C-116
57BLS54
57BLS74
57BLS94
57BLS116
60Vdc
BL57
57BL
57BLS54
57BLS116
DPM 42
57BLS94
BL57-12C-54
speed motor encoder
DPM 57BLS54
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DPF60IM400HB
Abstract: No abstract text available
Text: DPF 60 IM 400 HB tentative V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 400 V 60 A 60 ns 3 DPF 60 IM 400 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-247
60747and
DPF60IM400HB
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PDF
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DPF60IM400HB
Abstract: DPG60I400HA DPG60IM400QB
Text: DPF 60 IM 400 HB final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number DPF 60 IM 400 HB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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Fr600
60747and
20100216a
DPF60IM400HB
DPG60I400HA
DPG60IM400QB
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PDF
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DPG60IM400QB
Abstract: DPG60I400HA diode 0102 DPF60IM400HB marking HB diode diode marking 355 DPG60I DPG60I4
Text: DPF 60 IM 400 HB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number DPF 60 IM 400 HB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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60747and
DPG60IM400QB
DPG60I400HA
diode 0102
DPF60IM400HB
marking HB diode
diode marking 355
DPG60I
DPG60I4
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DC-18GHz
Abstract: No abstract text available
Text: DPDT 700 Latching | SMA RF Characteristics s DC-18 GHz s Ruggedized s 100K Cycles Specifications Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.15 80 0.15 1-4 1.25 60 0.25 4-8 1.35 60 0.35 8-12.4 1.50 60 0.50 12.4-18 1.50 60 0.50
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DC-18
700C70100
coms800
AS9100/ISO-9001:
DC-18GHz
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710C70200
Abstract: No abstract text available
Text: 710 Failsafe | SMA DPDT RF Characteristics s DC-18 GHz s Ruggedized s 100K Cycles Specifications Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.15 80 0.15 1-4 1.25 60 0.25 4-8 1.35 60 0.35 8-12.4 1.50 60 0.50 12.4-18 1.50 60 0.50
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DC-18
710C70200
AS9100/ISO-9001:
coms800
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CH-3185
Abstract: 250R 500R 600R
Text: Drahtpotentiometer Typ DP 60 Standardausführung Wire-wound potentiometer type DP 60 standard execution Potentiomètre bobiné type DP 60 exécution standard Eigenschaften Characteristics / Caractéristiques Widerstandsbereich 2R0 bis 20K Resistance range / Gamme de résistance
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CH-3185
250R
500R
600R
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nec 2Sb617
Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85
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IDA1263
IDC3180
2SA1263
2SC3180
BDT41B
BDT42B
BD244B
SSP82B
nec 2Sb617
2SA1102 SANKEN
2SD371-0
sanken 2sa1102
LT019
181T2B
Gentron
2SA808A
LT019S
2SB617
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Untitled
Abstract: No abstract text available
Text: DPF 60 IM 400 HB final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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60747and
20100216a
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Untitled
Abstract: No abstract text available
Text: Thyristor Selection Guide SELECT GUIDE 15 Metal/Plastic lT AMPS 0.2 @ TC (°C) 25 60 60 60 60 25 25 lTSM (AMPS) 7.5 10 10 10 10 10 10 0.8 * % CASE TO-92 SOT-23 SOT-89 TO-92 SOT-223 VDRM,VRRM (VOLTS) 30 2N5060 BRX44I 60 2N5061 BRX45t 2N5062 BRX46t 100 CMPS5061
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OCR Scan
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OT-23
OT-89
OT-223
2N5060
BRX44I
2N5061
BRX45t
2N5062
BRX46t
CMPS5061
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Untitled
Abstract: No abstract text available
Text: 310 Failsafe | N, TNC, SC DPDT RF Characteristics s DC-6.5 GHz s DC-12.4 GHz s Ruggedized s 100K Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.20 60 0.15 1-4 1.35 60 0.25 4-8 1.45 60 0.35 8-12.4 1.50 60 0.50 Note: RF Characteristics are for type N & TNC Female connectors, consult Dow-Key for other
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DC-12
310C00100
AS9100/ISO-9001:
coms800
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Untitled
Abstract: No abstract text available
Text: DPDT 300 Latching | N, TNC, SC RF Characteristics s DC-6.5 GHz s DC-12.4 GHz s Ruggedized s 100K Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.20 60 0.15 1-4 1.35 60 0.25 4-8 1.45 60 0.35 8-12 1.50 60 0.50 Note: Performance applies to N and TNC type connectors. Consult with factory for other
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DC-12
300C00100
coms800
AS9100/ISO-9001:
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •
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SiR662DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •
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SiR662DP
SiR662DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •
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SiR662DP
SiR662DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR688DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 0.0035 at VGS = 10 V 60 0.0045 at VGS = 6 V 60 0.0060 at VGS = 4.5 V 60 60 Qg (Typ.) 20.5 nC PowerPAK SO-8 S 6.15 mm S 3 D • Synchronous Rectifier
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SiR688DP
SiR688DP-T1electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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DPG60IM400QB
Abstract: DPF60IM400HB DPG60I400HA dpg 60 im 400 qb DPF60I
Text: DPG 60 IM 400 QB V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 IM 400 QB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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60747and
20100128a
DPG60IM400QB
DPF60IM400HB
DPG60I400HA
dpg 60 im 400 qb
DPF60I
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D2PAK package
Abstract: DPG60IM300PC
Text: DPG 60 IM 300 PC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 IM 300 PC 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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60747and
20100205a
D2PAK package
DPG60IM300PC
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STP10P6F6
Abstract: STD10P6F6 10P6F6 1040 TO-252
Text: STD10P6F6, STP10P6F6 P-channel 60 V, 0.15 Ω typ., 10 A STripFET VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages Datasheet — preliminary data Features Order codes VDSS RDS on max ID STD10P6F6 60 V 0.18 Ω 10 A STP10P6F6 60 V 0.18 Ω 10 A •
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STD10P6F6,
STP10P6F6
O-220
STD10P6F6
O-220
AM11258v1
STP10P6F6
10P6F6
1040 TO-252
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400QB
Abstract: No abstract text available
Text: DPG 60 IM 400QB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns 1 Part number Marking on product 2 DPG 60 IM 400QB 3 Features / Advantages: Applications: Package: ● Planar passivated chips
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400QB
60747and
400QB
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DPG60IM400QB
Abstract: DPG60I400HA
Text: DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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Original
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60747and
20100128a
DPG60IM400QB
DPG60I400HA
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dpg60i300
Abstract: DPG60IM300PC
Text: DPG 60 I 300 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 I 300 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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Original
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60747and
20100129b
dpg60i300
DPG60IM300PC
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PDF
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