6-18GHZ AMPLIFIER Search Results

Contextual Info: HP/Avantek 6-18GHz Amplifier Replacements DFT186N40U/ DFT186N50U Series HP/Avantek 6-18GHz Amplifier Replacements without Temperature Compensation DBS Model Number Frequency Response GHz Min. Gain (dB) Gain (dB) PldB (dBm) Max. Noise Figure (dB) Max. Min.

Contextual Info: MMA004AA 6-18GHz, 21dB Gain, 1.5dB NF Low Noise Amplifier Features • 16dBm PSAT with 1.5dB NF and 21.5dB gain typical from 6-18GHz • Gain flatness < +/-0.5dB • Input and Output matched to 50Ω • Self biased for simple biasing, small solution size and ease of manufacture

Contextual Info: HP/Avantek 6-18GHz Amplifier Replacements DWT186N30T/ DWT186N33T/ DWT186P18T/ Series HP/Avantek 6-18GHz Amplifu ;r Replacements with Temperature Com lensation G u a r a n te e d @ -5 4 T O +100 C M odel DBS F req u en cy R esponse N um ber G H z M in .

Contextual Info: HP/Avantek 6-18GHz Amplifier Replacements DWT186N23U/ DWT186N27U/ DWT186P20U Series HP/Avantek 6-18GHz Amplifier Replacements without Temperature Compensation G u a r a n te e d @ +25 C DBS M odel F req u e n c y G a in G a in N o is e P ld B G a in IP 3 V SW R

Contextual Info: LITTON IND/LITTON SOLID SbE ]> • 5S44SDD 0GDG524 275 ■ LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +24 dBm Typical Output Power @ 18GHz ■ 6 dB Typical Compressed Gain @ 18GHz ■ Low 2nd Harmonic Distortion

Contextual Info: MMA-061827 6-18GHz, 0.5W Power Amplifier Data Sheet December, 2012 .Features: L0705R35_2_2_A L0705R40_1_2_A L0705R35_2_2_A L0705R40_1_2_A Frequency Range: 6 – 18 GHz P1dB: 27 dBm Psat: 28 dBm Gain: 25 dB Vdd =6 V Ids = 800 mA Input and Output Fully Matched to 50 Ω

40 P1dB 2W

Abstract: DC TO 18GHZ RF AMPLIFIER MMIC 3521a L0705 L0705R
Contextual Info: MMA-061830 6-18GHz, 2W Power Amplifier Data Sheet December 2012 Features: L1505R 75_1_1_A L0505R25_2_A L0705R35_2_1_A L0705R35_2_1_A L1505R 75_1_1_A Frequency Range: 6 – 18 GHz P1dB: 32 dBm Psat: 33 dBm Gain: 25 dB Vdd =6 V Ids = 1200 mA Input and Output Fully Matched to 50 Ω

Rogers 4350B

Contextual Info: MMA-061830-R5 6-18GHz, 1W Power Amplifier Data Sheet December 2012 Features: • • • • • • • • Frequency Range: 6 – 18 GHz P1dB: 32 dBm Psat: 33 dBm Gain: 25 dB Vdd =6 V Ids = 1200 mA Input and Output Fully Matched to 50 Ω Integrated RF power detector

marconi

Abstract: NN12 P35-5131-000-200 MARCONI power
Contextual Info: P35-5131-000-200 GaAs MMIC POWER AMPLIFIER, 6-18GHz Simulated Electrical Parameters Parameters Small Signal Gain Gain Flatness Input Return Loss Output Return Loss Saturated Output Power Power Added Efficiency PAE Total circuit current Supply Voltage; Vdd

Contextual Info: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,

Contextual Info: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the

CHA3514

Abstract: sas 560
Contextual Info: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the

CHA6517

Abstract: fop 630
Contextual Info: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,

CHA3514

Contextual Info: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the

NN12

Abstract: P35-4140-0 P35-4140-000-200 DC TO 18GHZ RF AMPLIFIER MMIC
Contextual Info: Data sheet MMIC Broadband Amplifier, 6- 18GHz Features • Broadband cascadable gain block • AGC control with gate bias The P35-4140-000-200 is a high performance monolithic broadband amplifier designed for use in a wide range of applications including telecommunications, instrumentation

CHA3514

Contextual Info: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the

10A1

Abstract: 10B1 CHA3513
Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for

6-18GHz

Abstract: 99-F
Contextual Info: CHA3517-99F RoHS COMPLIANT 6-18GHz Dual Port Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3517-99F is composed by a two stage travelling wave amplifier followed by a Single Pole Double Through SPDT switch and a lange coupler. It is designed for wide

10A1

Abstract: 10B1 CHA3513
Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for

17-18g

Abstract: 8144 10A1 10B1 CHA3513 617G
Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for

CHA3512-99F/00

Abstract: CHA3512
Contextual Info: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed

Contextual Info: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed

CHA3512

Contextual Info: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed

17-18g

Abstract: CHA3513 8144 10A1 10B1
Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for