Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6 TRANSISTOR ARRAY SOURCE Search Results

    6 TRANSISTOR ARRAY SOURCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3127MZ Rochester Electronics LLC CA3127 - Transistor Array Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    6 TRANSISTOR ARRAY SOURCE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 -U n it 400m A Transistor Array IR2C26 • IR 2C26 4-Unit 400mA Transistor Array Pin Connections Description The IR 2 C 2 6 is a 4 -circuit d rive r IC, which con­ sists of an input in verter and a current source type output section. The output section is composed of a


    OCR Scan     		IR2C26 400mA 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)


    OCR Scan     		CA3097 221TB PDF

    M54563P

    Abstract: No abstract text available
    Text: M IT S U B IS H I BIPOLAR DIGITAL ICs M54563P 8-UNlT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY W ITH CLAM P DIODE DESCRIPTION The M54563P, 8-channel source driver, is designed for use PIN CONFIGURATION TOP VIEW with + 6 to + 1 6 V M O S logic systems.


    OCR Scan     		M54563P 500mA M54563P, M54563P PDF

    M2981P

    Abstract: M2981 24v 8 channel Relay driver 8-channel NPN darlington array
    Text: MITSUBISHI ELEK -CLINEAR> t>2 ^i| ~]~-<{3>-2<S ; ^ bSMTÖSb QQ04112 3 INDUSTRY STANDARD IND LINEAR ICs MITSUBISHI M2981 SEMICONDUCTORS 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M2981, 8-channel source driver, is designed for use with + 6 to


    OCR Scan     		QQ04112 M2981 500mA M2981, M2981P M2981 24v 8 channel Relay driver 8-channel NPN darlington array PDF

    td62782

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62781AP/F/AF TD62782AP/F/AF 8CH HIGH-VOLTAGE SOURCE DRIVER The T D 6 2 7 8 1 A P /F/A F Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent


    OCR Scan     		TD62781AP/F/AF TD62782AP/F/AF 100ns, 100ns td62782 PDF

    ON SEMICONDUCTOR J122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122 PDF

    J133 mosfet transistor

    Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133 PDF

    MRF9002NR2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		MRF9002R2 MRF9002NR2 PFP-16 PDF

    transistor A62

    Abstract: 9709K darlington buffer array A634 DIP18 S0P16 BA12003 A6257 sink 8 low darlington array BA614
    Text: lumm Transistor array Number Output Max.vdtage Output current mA of CHS (V) BA612 5 BA6256 B A664 6 BA13001F hput/output type Input active Output current Circuit level construction type Package Feature 24 450 25 Invert H Sink Darlington DIP14 24 100 25 Invert


    OCR Scan     		BA612 BA614 BA6256 BA13001F BA13002F BA12001 BA12002 BA12003 BA12004 BA618 transistor A62 9709K darlington buffer array A634 DIP18 S0P16 A6257 sink 8 low darlington array PDF

    Untitled

    Abstract: No abstract text available
    Text: TD62781,782AP/F/AF T O SH IB A TO SH IBA BIPO LAR D IGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TD62781AP, TD62781F, TD62781AF TD62782AP, TD62782F, TD62782AF 8CH HIGH-VOLTAGE SOURCE DRIVER The T D 6 2 7 8 1 A P /F /A F Series are comprised of eight source current Transistor Array.


    OCR Scan     		TD62781 782AP/F/AF TD62781AP, TD62781F, TD62781AF TD62782AP, TD62782F, TD62782AF DIP18-P-300-2 PDF

    mosfet array vgs 5v 2A

    Abstract: MO-169 HIP0061 HIP0061AS2 MO-169AC diode 3982
    Text: HIP0061 S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor Common-Source ESD Protected Power MOSFET Array March 1995 Features Package JEDEC MO-169 • Three 3.5A Power MOS N-Channel Transistors 7 DRAIN3 6 GATE3 5 DRAIN2 4 SOURCE 3 GATE2 2 DRAIN1 1 GATE1 • Output Voltage to 60V


    Original     		HIP0061 MO-169 100mJ HIP0061 1-800-4-HARRIS mosfet array vgs 5v 2A MO-169 HIP0061AS2 MO-169AC diode 3982 PDF

    TPIC1505

    Abstract: No abstract text available
    Text: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B


    Original     		TPIC1505 SLIS058 TPIC1505 PDF

    TPIC1505

    Abstract: No abstract text available
    Text: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B


    Original     		TPIC1505 SLIS058 TPIC1505 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B


    Original     		TPIC1505 SLIS058 PDF

    16PIN

    Abstract: IEI-1213 MEI-1202 UPA1604 DD 127 D transistor
    Text: DATA SHEET N E C COMPOUND FIELD EFFECT POWER TRANSISTOR r i — I 9 H I ¿ ¿ P A 1 6 4 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¿uPA1604 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 4 circuits, Clump Diode and resistances designed for LED, Relay,


    OCR Scan     		uPA1604 16PIN IEI-1213 MEI-1202 DD 127 D transistor PDF

    M54563WP

    Abstract: 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		M54563WP 500mA M54563WP 500mA) Jul-2011 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl PDF

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original     		M63840KP 500mA M63840KP 500mA) PDF

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high


    Original     		M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high


    Original     		M54563FP 500mA M54563FP 500mA) 20P2N-A PDF

    M54563FP

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high


    Original     		M54563FP 500mA M54563FP 500mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original     		M63840FP 500mA M63840FP 500mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		M63840KP 500mA M63840KP 500mA) 20P2F-A PDF

    pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		M54562WP 500mA M54562WP 500mA) Jul-2011 pnp DARLINGTON TRANSISTOR ARRAY 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode PDF

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		M63840FP 500mA M63840FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY PDF