6 BA DIODE Search Results

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

BA 6109

Contextual Info: Drivers for Motors with Reversible Brushes BA 610 9 BA 6 2 0 9 BA 6 2 0 9 N The BA6109, 1. 6 A on BA6209. BA6209 the input and diode. BA6209N a SIP is BA6209N provide BA6209N . logic regulation and (two The output inputs). 10-pin compact output modes The

bx 18A

Abstract: Y44K bby33
Contextual Info: Microwave, RF & Tuner Diodes For complete package outlines, refer to pages PO-1 through PO-6 PIN Diodes for Professional Applications Type M axim um Ratings BX Y 42 BA-3 BX Y 42 BA-5 B X Y 42 BA-6 BX Y 42 BA-7 B X Y 43A B X Y 43B B X Y 43C B X Y 44K 50 50

diode 10di

Abstract: 023R BA885
Contextual Info: Silicon PIN Diode BA 885 • Current-controlled RF resistor for RF attenuators • Frequency range: 1 MHz.2 GHz • Especially useful as antenna switch in TV-sat tuners Type BA 885 O rdering co de bulk: Q 6 2 7 0 2 -A 7 4 2 M a rk in g PA taped: Q 6 2 7 0 2 -A 6 0 8

ba capacitance diode

Contextual Info: BA 582 Silicon RF Switching Diode • Low-loss VHF band switch for TV/VTR tuners Type Marking Ordering code taped Package BA 582 blue/S Q62702-A829 SO D-123 Maximum Ratings Param eter Symbol Value Unit Reverse voltage Vr 35 V Forward current, 7a < 6 0 °C

BYX58-200

Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Contextual Info: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A

BA150

Contextual Info: FAGOR ^ BA 157 BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-IS Plastic -do •■ si s1 Voltage 400 to 1.000 V. C O eri s Current 1.0 A. at S0°C. 6 .3 5 to.a • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point,

BA diode

Abstract: BA147-150 BA147 diode ba 147 diode case R-1 diode case R-1 G BA 30 C BA147-300 BA 147 41880
Contextual Info: BA 1 4 7 / . . Silizium-Diode Silicon diode Anwendungen: Allgemein Applications: General purpose Abmessungen in mm Dimensions in mm KATHODE CATHODE IL » 2 ,6 'j ^ 1 1 0 0 ,5 5 ' H l - 1 —-2 6 - ► - -7 .2 -— - - 2 6 - 5 117

BB205

Abstract: BB105 BB209 BB109 Din 5461 BA111 BA121 BB204 BB205 g BB104
Contextual Info: Dioden Capacitance diodes Type Group Fig. Nr. Maximum ratings Characteristics Cd £/r = 3 V CD ( i / R = 3 V ) CD at V CD ( t / R = 25 V) CD (£/r = 30 V) PF ^R V 's at O ^R V BA 111 10 20 - - 4 5 -6 5 2 0.5 2 BA 121 10 30 - - 8 -1 2 2 0.9 2 50 10 30 -

BA111

Abstract: 741532 TFK U 111 B ba capacitance diode TUNER Ba 111
Contextual Info: BA 111 Silizium-Diffusions-Kapazitäts-Diode Silicon diffusion capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Tunern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm |L II .- J - -2 6 - - 1 1

IN3881

Abstract: fmx 1912 TI-1201 12FL 16FL 1N3879 1N3889 1N3893 L60S10 k 1452
Contextual Info: Data Sheet No. PD-2.030D INTERNATIONAL RECTIFIER I R 1N3879, 1IM388S, GFL, 1SFL, 16FL SERIES BA, 12A and 16A Past Recovery Rectifiers Description Major Ratings and Characteristics 1N3879 —1N3883 IN 3889 -1N3893 16FL. Unit 6* 12* 6 12 16 A 50Hz 72 145

3003-50

Contextual Info: Leuchtdioden – Light Emitting Diodes max. 26 max. 20 SINGLE-LED ∅ 10 BA 9s L 1 Chip DC + AC/DC Epoxy / Epoxy lens Kunststoff / spacer nm mcd + Anode DC Type M 1:1 Bestellcode Ordering-Code 6 6 DC DC 15 15 Rot/Red Gelb/Yellow 630 592 250 250 1 1 911M 02 0615 ER

Contextual Info: SIEM EN S Silicon PIN Diode BA 585 • Current-controlled RF resistor for switching and attenuating applications. • Frequency range 1 MHz . 2 GHz Type Marking Ordering Code tape and reel B A 585 white Q 6 2702-A859 R Pin Configuration Package1) S O D -1 2 3

C166

Abstract: JESD22-A114-E JESD51-2 KP236N6165 KP236
Contextual Info: BA P Analog Barometric Air Pressure Sensor IC KP 2 3 6 N 6 1 6 5 Analog Absolute Pressure Sensor Da t a S h e e t Revision 1.0, 2010-06-21 Se n s e & Co n tr o l Edition 2010-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Schottky Diode SC-62

Abstract: SE069
Contextual Info: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.

BAV99W A7

Abstract: BAV99VV BAS16VV BAS16W BAV70W BAV99W BAW56W BAV99W peak temperature
Contextual Info: BAS16W / BAV70W BA W 56W / BAV99W Surface M o u n t Sw itchin g Diode SW ITCHING DIODE 200-215m AMPF.RRES 70-75 VOLTS Featui-es: T o w Current Leakage *Low Forward Voltage “ Reverse Recover Time T rr*6 n s *Sm all Outline Surface Mount SOT-323 Package •

AMO 0210

Contextual Info: H A R R I S S E M I C O N Í S E CT OR Technical Dala _ 37E » 4 3 G 2 2 7 1 Q ü 5 S b 3 4 b Él HAS ’ CD54/74ACT7651 Advance Information -V I A OATA PORT OATA PORT 0 6 ba oeab Type Features: FcC lL o oC c K* O cC kK sS P II cc ba Ab Cc Ll O S O U R C E IS A S O U R C E

marking t54

Abstract: 2pa30
Contextual Info: L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BA T54 -4L J .Q 2.8 0.14 0.48 -*^p d 3§ 038 Pin configuration L 0.70 0.50 3 1= ANODE 2 = NC 3 = CATHODE t .4 2.6 2.4 1.2 R0.1 ÔÔÔ4T ii.8<r 0 .6 0 . 2.00

diode g29

Contextual Info: SEMICONDUCTOR DICE SWITCHING DIODES vF V BRI Dice type Description T rr Ir Min. Max. at Volts Volts mA «A Volts nS 250 1.0 100 0.1 200 50* G24 lF Max. at V R Typical Geometry BA S21 High voltage single diode H D 3A Single diode 85 1.0 10 1.0 75 6 G25 H D 2A

BAS21

Contextual Info: SEMICONDUCTOR DICE SWITCHING DIODES vF V BR> Dice type BA S21 Description High voltage single diode Ir Ip T rr Max. at V R Typical Geometry Min. Max. at Volts Volts mA (jA Volts 250 1.0 100 0.1 200 50* G 24 6 G 25 nS H D 3A Single diode 85 1.0 10 1.0 75 H D 2A

MOC8030

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA <s> <B> TO c a VOE UL CSA SETI SEMKO DEM KO BS NEM KO M OC8030 M OC8050 BA 0T [CTR = 300% Min 6-Pin D IP O ptoisolators Darlington Output No B a se Connection) [CTR = 500% Min] Motorola Preferred Devices STYLE 3 PLASTIC

Contextual Info: FM/IF system BA 4110 The BA4110 IC is an FM detector and intermediate frequency IF (10.7 MHz) amplifier. Dimensions (Units : mm) B A 4 1 1 0 (Z IP 1 6 ) Almost all necessary functions, such as FM tuner, signal-level meter output, AGC output, and AFC output, are built into the

250 Amp current 1500 volt diode

Contextual Info: TEN TATIV E DATA 6CR6 TUNGSOL DIODE PENTODE MI NIATURE t y p e y _ 4 . COATED U N IP OT EN TIAL CATHODE MAX X 's T -5 -; HEATER 6 . 3 VOLTS MAX N 0 . 3 AMP. AC OR DC I max ANY MOUNTING P O S ITIO N BOTTOM VIEW MINIATURE BUTTON 7 P I N BA SE G U S S BULB 7 U

3bs3

Abstract: uc 3882 D1N3879
Contextual Info: Data Sheet No. PD-2.030D INTERNATIONAL RECTIFIER IO R 1N 3879, 1N3B89, GFL, 1SFL, 16FL SERIES BA, 18A and 16A Past: Recovery Rectifiers D e s c rip tio n M a jo r R atings and Characteristics *P AV>T ( 50 Hz j 1N3879 - 1N 3B83 IN 3889 - 1N 3BS3 6* 12 * 72