5V GATE TO SOURCE VOLTAGE MOSFET Search Results

bv42 transistor

Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate

TC227

Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate

irlf120

Abstract: 480 mosfet to-39
Contextual Info: PD-90639B IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.

Contextual Info: PD-90639B IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.

Contextual Info: PD-90639C IRLF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-39 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRLF120 100V 0.35Ω ID 5.3A The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.

si7738

Abstract: flyback secondary RC snubber CMZ5919B
Contextual Info: LT3748 100V Isolated Flyback Controller Features Description 5V to 100V Input Voltage Range nn 1.9A Average Gate Drive Source and Sink Current nn Boundary Mode Operation nn No Transformer Third Winding or Opto-Isolator Required for Regulation nn Primary-Side Winding Feedback Load Regulation

Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY VDS V RDS(on)() Pin Definition: 1. Source 2. Gate 3. Drain 60 Features ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram  Low On-Resistance  ESD Protection  High Speed Switching  Low Voltage Drive

Pa3177NL

Abstract: LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode
Contextual Info: LT3748 100V Isolated Flyback Controller Features n n n n n n n n n n Description 5V to 100V Input Voltage Range 1.9A Average Gate Drive Source and Sink Current Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation Primary-Side Winding Feedback Load Regulation

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: differential pair cascode Monolithic Transistor Pair ALD1101 ALD1102 ALD1103 Dual N-Channel MOSFET dip package CMOS differential amplifier cascode
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

p-channel mosfet transistor low power

Abstract: differential pair cascode mosfet vgs 1.2v vds 5V mosfet vgs 5v n channel enhanced mosfet mosfet Vgs 10mV Ald1103 Monolithic Transistor Pair p channel mosfet ALD1101
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are

RASCO

Contextual Info: I I I / I \ A dvanced 1 L inear ALD1103 D e v ic e s , In c . DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

50130A

Abstract: RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334
Contextual Info: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

AN9321

Abstract: AN9322 an7254 AN7260
Contextual Info: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated

AN7254

Abstract: AN7260 RFW2N06RLE TB334
Contextual Info: RFW2N06RLE Data Sheet July 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET File Number 2838.3 Features • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes

12N6LE

Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
Contextual Info: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet

x1041

Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

voltage source inverter

Abstract: parallel mosfet p channel ALD1105 ALD1115 n channel silicon mosfet ALD1115PAL ALD1116 5V GATE TO SOURCE VOLTAGE MOSFET inverter 4v to 12v N P CHANNEL dual POWER MOSFET
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1115 COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1115 is a monolithic complementary N-channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These

Contextual Info: æ I \ I / I " A dvanced 1 ^ L in e a r ALD1t 03 D e v ic e s , In c. DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

ALD1105PBL

Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are

AN7254

Abstract: AN7260 RFP15N08L TB334
Contextual Info: RFP15N08L Data Sheet June 1999 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET File Number 2840.1 Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as