5TH CLASS 2012 Search Results

UPS APC RS 1500 VA service manual

Abstract: apc ups transformer 65kAIC apc ups rt 2000 SERVICE MANUAL Digital Panel Meter PM 435 DSP BASED ONLINE UPS design
Contextual Info: Uninterruptible Power Supplies Section 20 Power dependency has increased dramatically in the new business environment based on e-commerce applications, mobile networks, corporate Internet sites, e-pay and networked IT structures. Near one-hundred percent system availability is

Contextual Info: IRG7RA13UPbF PDP TRENCH IGBT Key Parameters Features • Advanced Trench IGBT Technology  Optimized for Sustain and Energy Recovery circuits in PDP applications  Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency  High repetitive peak current capability

Contextual Info: ACE User Guide For ACE Version 5.0 UG001 v5.0 - 5th December 2012 http://www.achronix.com Copyright Info Copyright 2006 - 2012 Achronix Semiconductor Corporation; certain portions of this guide are Copyright © 2000, 2006 IBM Corporation and others. All rights reserved. Achronix and Speedster are trademarks of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

D260-4118-0000

Abstract: 0119A 0190A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: User's Guide SLAU432 – February 2012 DAC348x EVM 1 2 3 4 5 Contents Introduction . 2 1.1 Overview . 2

Contextual Info: A.V Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for Automotive Applications Class 1 and Class 2, 50 VDC, 100 VDC, 200 VDC FEATURES • AEC-Q200 qualified with PPAP available • High reliability MLCC insert with wet build

DETUNING REACTOR

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M400 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

Contextual Info: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

M27500-16RC1509

Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: A Series www.vishay.com Vishay BCcomponents Axial Leaded Multilayer Ceramic Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 200 VDC, 500 VDC FEATURES • • • • High capacitance with small size High reliability Axial mounting style

Contextual Info: DuroSite LED High Bay - UL for Indoor and Outdoor Industrial Applications Patent Pending DuroSite® LED High Bay Features & Benefits • 10 year full performance warranty available on specific models • 5 year full performance warranty standard • L70 rated for >100,000

bd139 equivalent

Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
Contextual Info: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION

Contextual Info: JESD204B PHY Layer Compliance Test Rev. 1 — 31 May 2012 White paper Document information Info Content Author s Maury Wood – General Manager, High-Speed Converters, NXP Semiconductors; Scott Ferguson – Field Digital Specialist, Agilent Technologies; Joe Evangelista – Field Applications Engineer, Agilent

Contextual Info: Trusted Smart Life Solutions Electronic Driving Licenses Application Introduction Q1 - 2013 Introduction to National ID • Governments introduce electronic drivers licenses to – Reduce document fraud & identity theft – Securely and simply identify drivers

ATC600 capacitor

Abstract: MRF7S21170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

"MARKING CODE BR"

Contextual Info: PJSD05MLFN2 ESD PROTECTION DIODES The PJSD05MLFN2 is designed to protect voltage sensitive components from ESD. Excellent clamping capability,low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. VOLTAGE POWER

0119A

Abstract: IC/0119A IC/IC/0119A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to