5TE DIODE Search Results

BR7545

Contextual Info: 5TE ]> • 4ÔSS4S2 0012b3b MTS ■ INR PD-2.326 INTERNATIONAL RECTIFIER Intemaitional gelRectffier MBR7535 MBR7545 SCHOTTKY RECTIFIER 70 Amp Major Ratings and Characteristics Description/Features Characteristics M BR75. Units lF AV Rectangular waveform

Contextual Info: 5TE D • 4ÖSS452 0G12b74 5Tb ■ INR PD-2.217A INTERNATIONAL RECTIFIER htemational S Rectifier 84c n q . s e rie s SCHOTTKY RECTIFIER 80 Amp Description/Features Major Ratings and Characteristics Characteristics 84CNQ. Units lF AV Rectangular waveform

Contextual Info: 5TE D • 4Ô55452 GÜ12SSÔ *435 ■ INR PD-2.321 INTERNATIONAL RECTIFIER MBR2080CT m b r2 0 9 0 ct m b r2 o io o c t International S Rectifier SCHOTTKY RECTIFIER 20 Amp Description/Features Major Ratings and Characteristics Characteristics MBR20.CT Units

Zener Diode White noise

Abstract: 1N4614-1N4627 AMERICAN POWER DEVICES D313 E zener diode si 18 D313 iran DIODE ZENER 1n4101 PACKAGE 1N4614 1N4615
Contextual Info: 5TE D AMERICAN POWER DEVICES b 4 0737135 GGQ0Ü3T b*îô • APD 'T-//-o<? american 1N4614-1N4627 and 1N4099-1N4135 power devices, inc. Standard tolerances are 5% 2% & 1% are available , SEM IC O N D U C T O R S 400 mW low noise silicon zener diodes FEATURES

Zener diode itt 13

Abstract: IN4781a 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A
Contextual Info: niCROSEMI CORP 5TE D • bllSflbS DD0n3fl 3t5 ■ / 1N4775 / thru Microisemi Corp. SANTA ANA. CA HSC j 1N4784A SCOTTSDALE. A7. fo t mu 602 94I-6300 FEATURES 8.5 VOLT TEMPERATURE COMPENSATED ZEN ER REFEREN CE DIO DES • ZENER VOLTAGE 8.5V + 5 % (See Note 4)

palce16v8 programming algorithm

Contextual Info: 5TE D • 02 57 5 2 b 00 32 2 7 1 510 MANDE ADV MICRO PLA/PLE/ARRAYS COM’L: H-7/10/15/25, Q-15/25 -_ MIL: H-10/15/20/25 PALCE16V8 Family AdvS EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS ■ ■ Pin, function and fuse-map compatible with all

Contextual Info: CLARE C P / CP Clare SOLI D STATE CORPORATION 5TE D • eiMMTGM GÜGG17Û 473 B K P C L PowerBLOC Solid State Products Division -r-m -s i PowerBLOC Solid State Switches DESCRIPTION CP Clare’s “JT”/“MX” series solid state switches feature a time and field proven

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using

MSC 5511

Abstract: L 3055
Contextual Info: 5TE D • 0 3 N a tio n a l b5D112b GGbb'iSb S3b ^ ÆM Semiconductor - P 6 > 7 '7 > i - S 5 54VHC/74VHC139 Dual 2-to-4 Decoder/Demultiplexer General Description Features The VHC139 is an advanced high speed CMOS 2 to 4 line decoder/demultiplexer fabricated with silicon gate CMOS

2SKI34

Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Contextual Info: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t

40CPQ40

Abstract: TO-3P Jedec package outline
Contextual Info: 5TE D • 4055452 DÜ1ES52 754 M I N R PD-2.308 RECTIFIER International S Rectifier 4o c p q o 5o 4o c p q o 6o SCHOTTKY RECTIFIER 40 Amp Description/Features The 40CPQ. center tap Schottky rectifier has been opti­ mized for very low forward voltage drop, with moderate

ns537

Abstract: N5522 NS546 n5s4 diode yz zener 1N5518 1N5546 1N5546B-1 N5519 N5533
Contextual Info: HICROSEHI 5TE D coRP • b l l 5 ñ t . S 0 0 Ql ñ ^3 274 1N5518 thru 1N5546 M icm em i Corp. ¥ Tftetítoóe e*pe/ts SANTA AN A, CA SC O 'i 1S D A U . A / F or m ore i 602 941-6300 FEATURES LOW VOLT/ AVALANCHE DIODES DO-35 • LOW ZENER NOISE SPECIFIED

Contextual Info: AMERICAN POWER D E V IC E S 5TE D 0 737 135 00G0077 american SEM ICO N D U CTO R S 4T1 • A P D /-H -JlS 1N6267 - 1N6303 1N6267A - 1N6303A p o w e r d evices, inc. 1500 W silicon voltage transient suppressors FEATURES MAXIMUM RATINGS • 1500 W of peak pulse power

1N33218

Abstract: 1N3305 1N3305B 1N3350B 1N4549B 1N4550B 1N4552B 1N4555B 1N4556B 1N4564B
Contextual Info: n i C R O S E n i coRP 5TE D MicrosemiCorp. j . r , SANTA ANA, CA • bll5flti5 D 0 0 1 ñ b 3 S3? ■ t„ vwniirt. SCOTTSDALE, AZ F o r m o r e i n f o r m a ti o n c a ll: / NSC 1N 3 3 0 5 thru 1N 3350B and 1N.4549B thru m,*jm e g p n ^ 602 941-6300

laser diode chip

Abstract: nec 2222 NDL5850D DIODE CHIP
Contextual Info: N E C ELECTRONI CS I NC fc.EE D • b4 5 7 S2 S 0 0 3 0 0 4 3 b5b H N E C E DATA SHEET NEC LASER DIODE NDL5850D ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .4 Gb/s DESCRIPTION NDL5850D is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed

1NS817

Abstract: 1n5823a motorola 1w zener diodes 1n*23a 1n6933 k 3067 1N5914A 1N5915A 1N5916A 1N5920A
Contextual Info: AM ER I C A N PO WER D E V I C E S STE D Ü 7 37 13 S 0 0 0 0 0 4 e] 537 • 1N5913-1N5949 american SE M IC O N D U C T O R S W r -it-tS " Standard tolerances of 5% 10%, 5%, 2% & 1% are available power devices, inc. 1.5 watt silicon zener diodes MECHANICAL

Contextual Info: IOR 4ass4sa Goicmi a • T-oi-as IN T E R N A T IO N A L R E C T IF IE R 199 R77R SERIES 500Q-4400 VOLTS RANGE 2 9 5 0 A MP A V G H O C K E Y P U K DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS I PART I NUH6SR i 1 X * Î X ! R77B5M 1 j ! i • I 1 S

Contextual Info: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses

irkv 300

Abstract: d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters
Contextual Info: S IE 4Ô5SMS2 D 0Ü13373 International S Rectifier I INR SERIES IRK.170, .230, .250 SCR / SCR and SCR / DIODE INTERNATIONAL 504 NEW MAGN-A-pak Power Modules R EC TIFIER Features • ■ ■ ■ ■ ■ ■ ■ ■ High v o lta g e . E le c tric a lly is o la te d ba se p la te

Contextual Info: 4055452 □□1E4ÖE 5DD • INR international PD-2.325 Re c t i f i e r htemational Hü Rectifier MBR735 mbr745 SCHOTTKY RECTIFIER 7.5 Amp Major Ratings and Characteristics Description/Features Characteristics MBR7. Units lF AV Rectangular waveform 7.5

57141

Abstract: S410
Contextual Info: HARK IV/ GULTON GRAPHIC ÜS D • S7T4im 000G3D0 1 T - S i - 1S gulton. Graphic Instruments Division 011 39 TEXTHEAD, 6 X 7 DOTS - 062 • .010 ^ - T he 0 1 1 3 9 is arranged in six groups or columns of seven dots on 0 .0 1 6 8 " centers w ith 0 .0 5 0 " spacing between

Contextual Info: INTERNATIONAL RECTIFIER S1E » • 48SS452 OOlSIbS 227 « I N R 3 Â //2 X M G o 6 1990 Bulletin 12018 INTERNATIONAL RECTIFIER I O R 25F. SERIES 25 Amp Average MEDIUM POWER SILICON RECTIFIER DIODES Features Description ■ W ide current range This range of low power

10MQ040

Contextual Info: STE D • 4ASS4SS Gü l23 b4 bOM ■ INR P D -2.284 INTERNATIONAL RECTIFIER Intemsitional Iior IRectifier 10MQ040 SCHOTTKY RECTIFIER 1.1 Amp Description/Features Major Ratings and Characteristics Characteristics 10MQ040 Units lF AV Rectangular waveform 1.1

Contextual Info: • 46 55 4 5 2 DD12442 T24 ■ INR PD-2.047C INTERNATIONAL RECTIFIER International Rectifier sosq . s e r ie s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The