5IB2 Search Results

ksd5703

Contextual Info: KSD5703 KSD5703 High Voltage Color Display Horizontal Deflection Output No Damper Diode • High Collector-Base Voltage : VCBO=1500V • High Switching Speed tF = 0.3µs (Max.) • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor

2SC3990

Contextual Info: Ordering n u m b e r:EN2234C No.2234C 2SC3990 NPN Triple Diffused Planar Silicon Transistor SA V V O i Switching Regulator Applications Features • High breakdown voltage, high reliability. •Fast switching speed. • Wide ASO. • Adoption of MBIT process.

KSD5707

Contextual Info: KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output • High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs Max. TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSC5802a

Abstract: KSC5802 cross reference TRANSISTOR ksc5802 KSC5802
Contextual Info: KSC5802 KSC5802 High Voltage Color Display Horizontal Deflection Output • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs Typ. Wide S.O.A For C-Monitor(69KHz) TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor

KSC5345TU

Contextual Info: KSC5345 KSC5345 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

KSC50

Contextual Info: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY • HIGH SPEED SWITCHING: tF = 0.1^s Typ • WIDE SOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 800 V Collector-Emitter Voltage V CEO 500 V Emitter-Base Voltage

Contextual Info: [ Ordering number: EN 996B 2SC3039 N0.996B NPN Triple Diffused Planar Silicon Transistor K 4Ö0V/7A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta;=25°C Collector-to-Base Voltage

2SC3458

Abstract: 234S npn 10a 800v NPN Transistor 1.5A 5V
Contextual Info: Ordering number: EN 1589C 2SC3458 NPN Triple Diffused Planar Silicon Transistor 800V/3 A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process.

1400v npn transistor

Abstract: using of damper in Horizontal Output Transistor FJAF6706D
Contextual Info: FJAF6706D FJAF6706D High Voltage Color Display Horizontal Deflection Output Damper Diode Built In Equivalent Circuit C • High Collector-Base Breakdown Voltage (BVCBO=1500V) B • High Switching Speed (tF. typ=0.1µs) • For Color TV 50Ω typ. TO-3PF

Contextual Info: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for ElectronicBallast Application Small Variance in Storage Time

2SD1402

Contextual Info: 2SD1402 NPN Triple D iffu se d Planar S ilico n T ransistor 2022 Color TV Horizontal Deflection Output Applications 1.1269B Features: ’ High breakdown voltage and high reliability • High switching speed • Capable of being mounted easily due to one-point fixing type plastic mold

2SC3458

Contextual Info: Ordering number: EN 1589C 2SC3458 NPN T riple Diffused Planar Type S ilico n Transistor For Sw it c h in g Regulators Features . High breakdown voltage and high reliability. * Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process. Absolute Maximum Bat logs at Ta=25°C

KSC2518

Contextual Info: KSC2518 KSC2518 High Speed, High Voltage Switching • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

HLB122L

Abstract: HLB122
Contextual Info: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage

Contextual Info: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

J5502

Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
Contextual Info: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *

HLB123

Abstract: HLB123SA ha2006 HA-2006
Contextual Info: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

Contextual Info: Ordering number:ENN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3149] 10.2

Contextual Info: Ordering number:ENN1251A NPN Triple Diffused Planar Silicon Transistor 2SC3183 800V/0.2A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3183] 10.2

2SC3090

Abstract: ITR05351 ITR05352 ITR05353 ITR05354 ITR05355
Contextual Info: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6

2SC3083

Abstract: ITR05305 ITR05306 ITR05307 ITR05308 ITR05309
Contextual Info: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0

2sc3151

Contextual Info: Ordering number:ENN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3151] 15.6

Contextual Info: Ordering number:ENN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3038] 10.2 3.6

2sa160

Abstract: 2SA1607 2SC4168 ITR04038 ITR04039 ITR04040 ITR04041
Contextual Info: Ordering number:ENN2479B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018B 0.4 0.16 0 to 0.1