5G DIODE Search Results

5g diode

Abstract: MT208-5G MT208-5R MT208-5Y
Contextual Info: marktech STTTbSS 0QQD337 lflE D international »4 LED LAMP ARRAYS MT208-5R, MT208-5G, MT208-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT20S-5R — Red Light Emission MT208-5G — Green Light Emission MT208-5Y — Yellow Light Emission

5g diode

Abstract: MT205-5G MT205-5R MT205-5Y Led 5r
Contextual Info: marktech QGQQ33b 2 1ÖE D international LED LAMP ARRAYS MT205-5R, MT205-5G, MT205-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT205-5R — Red Light Emission MT205-5G — Green Light Emission MT205-5Y — Yellow Light Emission • Bar point size 1x5mm.

Contextual Info: marktech international lflE STTTbSS D 0QQD337 »4 LED LAMP ARRAYS MT208-5R, MT208-5G, MT208-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT20S-5R — Red Light Emission MT208-5G — Green Light Emission MT208-5Y — Yellow Light Emission

DIODE IN4007

Abstract: IN4007 transistor IN4007 Diodes In4007 in4007 DIODE pin configuration IN4007 DATASHEET CHARACTERISTICS DIODE IN4007 IN4007 ordering information IN4007 diode ordering information of IN4007
Contextual Info: DEM-OPA660-5G EVALUATION FIXTURE FEATURES APPLICATIONS ● EASY AND FAST PERFORMANCE TESTING ● COMPONENTS INCOME CONTROL ● SHOWS OPTIMIZED BOARD LAYOUT ● CIRCUIT DESIGNS ● PERFORMANCE CHECKS ● REPLACES SELF-MADE BOARDS DESCRIPTION The unassembled demo board DEM-OPA660-5G contains three different configurations of the OPA660

Contextual Info: marktech QGQQ33b 2 1ÖE D in t er n a t io n a l LED LAMP ARRAYS MT205-5R, MT205-5G, MT205-5Y OUTLINE AND PIN CONNECTION FEATURES • All plastic mold type MT205-5R — Red Light Emission MT205-5G — Green Light Emission MT205-5Y — Yellow Light Emission

QSFP PCB design

Abstract: QSFP VCSEL array, 850nm for fiber EN61000-4-2 qsfp connector ipass connector 1761987-9 tyco vcsel Reflex Photonics
Contextual Info: Product Specification 20GBd QSFP 850nm Transceiver TRX20GVP1202 Product Specification 20GBd QSFP 850nm Transceiver TRX20GVP1202 Product Features: Hot pluggable QSFP optical transceiver 4 independent duplex channels operating at 5G Low power consumption, <0.9W typ.

RLT1300-5G

Contextual Info: RLT1300-5G TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Structure: GaInAsP/InP SQW strucutre Peak Wavelength : single mode, typ. 1300 nm Optical Ouput Power: 5 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View

Contextual Info: DGB8112 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power800m Frequency Min. (Hz)5G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DGB8113 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power800m Frequency Min. (Hz)5G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: WSTech Diode-Pumped Solid-State Blue Laser Specification Part No: TECBL-5G-473 OPTICAL Wavelength Product Features • • • Optical Output Power 5 mW Power stability <1% Laser Class Class IIIA Laser Operation Continuous Laser Structure Single Mode Laser

RLT1300-5G

Abstract: SOT-148
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1300-5G TECHNICAL DATA Middle Power Infrared Laserdiode Structure: GaInAsP/InP SQW structure

RLT1650-5G

Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1650-5G TECHNICAL DATA Infrared Laserdiode NOTE! Structure: QW structure

RLT1650-5G

Abstract: 1650 LD
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1650-5G TECHNICAL DATA Infrared Laserdiode NOTE! Structure: QW structure Lasing wavelength: 1650 nm typ.

RLT1550-5G

Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1550-5G TECHNICAL DATA Infrared Laserdiode Structure: GaInAsP/InP, SQW structure

1B4B41

Abstract: Fast Recovery Diodes "Fast Recovery Diodes" 1NU41 Z47C
Contextual Info: m RECTIFIERS CATEGORIES Devices REC TIFIERS — Single General purpose Rectifiers S5688G Fast Recovery Diodes FRD TVR 5G Fast Recovery Diodes (V-FR D) 1GH46 — Super Fast Recovery Diodes (S-FRD) 1NU41 — H igh-E fficiency Diodes (HED)- 1D L 4 2 A S chottky Barrier Diodes (SBD). 1 GW J43

LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

Abstract: 5 VOLT 20 AMP smps Oltronics 12 VOLT 10 AMP smps LC3020 rectifier diode 6 amp 400 volt 3020 diode
Contextual Info: OLTRONICS INC Oltronics In c . ~5G D E j l n 7 7 û S cm 0DD0D43 D T - ' Z S ’ O 'l Data Sheet No. 118401 _ Power Schottky Diodes 148 Sidney St. • Cambridge, MA 02139 • Tel. 617 354-6534 30 Amp, 20 Volt Power Schottky Rectifier LC 3020

RLT1550-5G

Abstract: SOT-148 laser diode 1550 nm
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1550-5G TECHNICAL DATA Infrared Laserdiode Structure: GaInAsP/InP, SQW structure Lasing wavelength: single mode 1550 nm typ.

RLT1300-5G

Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1300-5G TECHNICAL DATA Middle Power Infrared Laserdiode Structure: GaInAsP/InP SQW structure

Contextual Info: DB3X316J Silicon epitaxial planar type For small current rectification Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 5G

PJESDA6V8

Abstract: PJESDA6V8-5G
Contextual Info: PJESDA5V6-5G SERIES SOT-563 QUAD ARRAY FOR ESD PROTECTION FEATURES • Low Leakage < 1A@VRWM • Breakdown Voltage : 5.6Volt-6.7Volt@1mA • ESD Protection Meeting IEC61000-4-2-Level 4 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

SOT marking 5G

Contextual Info: PJESDA5V6-5G SERIES SOT-563 QUAD ARRAY FOR ESD PROTECTION FEATURES • Low Leakage < 1A@VRWM • Breakdown Voltage : 5.6Volt-6.7Volt@1mA • ESD Protection Meeting IEC61000-4-2-Level 4 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

Contextual Info: THYRISTOR MODULE PK pd,pe,kk 55GB UL;E76102(M) Power Thyristor/Diode Module P K 5 5G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 800 V are available, and electrically isolated mounting

Contextual Info: DRG1604/5A-DRG1604/5G 5/16" Glass Passivation Tin-can Diodes 特征 PF-3 FEATURES .25安培工作温度为125度,无热损耗下. 25 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current

Contextual Info: PJESDA5V6-5G SERIES QUAD ARRAY FOR ESD PROTECTION SOT-563 • Breakdown Voltage : 5.6Volt-6.7Volt@1mA 0.044 1.10 0.035(0.90) • Low Leakage < 1A@VRWM • ESD Protection Meeting IEC61000-4-2-Level 4 • Lead free in compliance with EU RoHS 2011/65/EU directives.