Untitled
Abstract: No abstract text available
Text: "34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC MICRO-T continued dF J b3t,7ES5 (DIODES/OPTO) 34C CI03a202 38202 D r - 5f- n MMT74 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low-noise amplifier, oscillator and mixer applications. TOP
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CI03a202
MMT74
450-MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of two IGBTs in a half-bridge configu ration with each transistor having
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CM350DU-5F
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bc807
Abstract: BC808 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC807B
Text: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38
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BC807
BC808
BC807
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
BC808
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
BC807B
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Untitled
Abstract: No abstract text available
Text: mNEHEX CM45QHA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Single IGBTMOD 450 Amperes/250 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM45QHA-5F
Amperes/250
00QT303
CU450HA-5F
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Untitled
Abstract: No abstract text available
Text: mßmnEx CM600HA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1900 724 925-7272 Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM600HA-5F
Amperes/250
120CA
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Untitled
Abstract: No abstract text available
Text: CM200TU-5F m Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 TtOflCh GcitO DGSÍQfl Six IGBTMOD 200 Amperes/250 Volts D escription: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM200TU-5F
Amperes/250
-400A/
peres/250
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F
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2002/95/EC)
2SK3546G
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Untitled
Abstract: No abstract text available
Text: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48
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BC807
BC808
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
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Untitled
Abstract: No abstract text available
Text: noNm Products P»g« Type Semiconductor IC BA 0 5F P 1/9 STRUCTURE Silicon Monolithic Integrated circuit TYPE Low-Dropout Three-Terminal Positive Voltage Regulator PRODUCT SERIES B PHYSICAL DIMENSIONS Fig-1 BLOCK DIAGRAM Fig-2 FEATURES 1.Maximum output current 1A.
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SEP/12A
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2SK3546G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name
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2002/95/EC)
2SK3546G
2SK3546G
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motorola U310
Abstract: DFM145 U310 MOTOROLA
Text: MOT OROL A SC Im 5F |b3t> 7S S 5 0030 047 b í DIODES/OPTO> t 6367255 MOTOROLA SC DIODES/OPTO 3^c 38047 T " 1( FIELD-EFFECT TRANSISTORS DICE (continued) ~ Q 2S~ UC310 DIE NO. LINE SOURCE — DFM145 This die provides performance equal to or better than that of
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DFM145
UC310
motorola U310
DFM145
U310 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain
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Original
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2002/95/EC)
2SK3547G
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2SK3547G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain
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Original
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2002/95/EC)
2SK3547G
2SK3547G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name
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2002/95/EC)
2SK3546G
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IGBT 350A
Abstract: CM350DU-5F igbt mitsubishi 520 ac C2E1 IGBT module 700a
Text: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
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CM350DU-5F
IGBT 350A
CM350DU-5F
igbt mitsubishi 520 ac
C2E1
IGBT module 700a
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te
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2002/95/EC)
2SK3547G
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T8A250V
Abstract: 800w power inverter circuit diagram NEMIC LAMBDA supply Circuit diagram transistor Arm 3055 equivalent coutant coutant power supply 5V nc302 zener diode for 240v ac voltage remote control LAMBDA zup
Text: GLOBAL NETWORK Europe / North America Asia / Far East / Middle East NORTH AMERICA Lambda Americas, Inc. 3055 Del Sol Boulevard San Diego, CA 92154 Tel: +1-800-LAMBDA-4 Tel: +1-619-575-4400 Fax: +1-619-429-1011 www.lambdapower.com Densei Lambda KK, 5F Dempa Bldg, 1-11-15 Higashigotanda,
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1-800-LAMBDA-4
RS232
RS485
RS232)
T8A250V
800w power inverter circuit diagram
NEMIC LAMBDA supply Circuit diagram
transistor Arm 3055 equivalent
coutant
coutant power supply 5V
nc302
zener diode for 240v ac voltage
remote control
LAMBDA zup
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CM350DU-5F
Abstract: igbt mitsubishi 520 ac IGBT module 700a forklift transistor 350A
Text: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
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CM350DU-5F
CM350DU-5F
igbt mitsubishi 520 ac
IGBT module 700a
forklift
transistor 350A
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2SK3539G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y
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2002/95/EC)
2SK3539G
2SK3539G
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via VT8237A
Abstract: K8N890 bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd
Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan
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K8N890
CN1001
60mils
G5240B1T1U
6019B0252801
U1003
3703-F12N-03R
6012B0111303
6019B0252801
via VT8237A
bq24721
VT6103L
IT8512E-L
vt1634
vt8237
Inventec
npn transistor w16
w25 transistor smd
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na
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2002/95/EC)
2SK3539G
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IGBT module 700a
Abstract: CM350DU-5F
Text: CM350DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Powerex IGBTMOD™ Modules
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CM350DU-5F
Amperes/250
IGBT module 700a
CM350DU-5F
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IT8512E-L
Abstract: ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 G5240B1T1U PZ6382A-284S-41F transistor C547 npn
Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan
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Original
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K8N890
U1002
CN1001
60mils
G5240B1T1U
6019B0252801
U1003
3703-F12N-03R
6012B0111303
IT8512E-L
ITE 8512
w25x80vssig
bq24721
Inventec
28c43
KBC-ITE-8512
PZ6382A-284S-41F
transistor C547 npn
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CM350DU-5F
Abstract: No abstract text available
Text: CM350DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Powerex IGBTMOD™ Modules
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CM350DU-5F
Amperes/250
CM350DU-5F
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