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    5F MARKING CODE TRANSISTOR Search Results

    5F MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    5F MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F


    Original     		2002/95/EC) 2SK3546G PDF

    2SK3546G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		2002/95/EC) 2SK3546G 2SK3546G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		2002/95/EC) 2SK3547G PDF

    2SK3547G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain


    Original     		2002/95/EC) 2SK3547G 2SK3547G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name


    Original     		2002/95/EC) 2SK3546G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te


    Original     		2002/95/EC) 2SK3547G PDF

    2SK3539G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y


    Original     		2002/95/EC) 2SK3539G 2SK3539G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na


    Original     		2002/95/EC) 2SK3539G PDF

    BC808-16

    Abstract: No abstract text available
    Text: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage


    Original     		BC808 OT-23 2002/95/EC Jun-2009, KSPR03 BC808-16 BC808-25 BC808-40 PDF

    BCX71RG

    Abstract: BCW61RB bcw61rd
    Text: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type


    OCR Scan     		DQ02353 O-236) BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BCX71RG BCW61RB bcw61rd PDF

    marking code HF

    Abstract: transistors 3K
    Text: PNP Transistors PNP Silicon Transistors TO-236 Plastic Package LU 1 Marking Code £ Type hFE -V at —V ce at ce/ - lc fT - I ces -VcEsat at —lo /—I b Cob at -V at -V ce/ - I c V/mA max.V mA/mA max. nA V MHz V/mA max. pF V 45 45 45 25 25 25 65 65 45


    OCR Scan     		O-236 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BC857A marking code HF transistors 3K PDF

    BC808

    Abstract: BC808-16 BC808-25 BC808-40
    Text: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant


    Original     		BC808 OT-23 2002/95/EC BC808 BC808-16 BC808-25 BC808-40 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC808 PNP General Purpose Transistor FEATURES • Suitable for AF-Driver stages and low power output stages MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant


    Original     		BC808 OT-23 2002/95/EC PDF

    4501 ic

    Abstract: npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 BC818 marking 5A
    Text: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,


    Original     		BC807, BC808 OT-23 BC817 BC818 OT-23 Group-16 BC807 4501 ic npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 marking 5A PDF

    BC 194 TRANSISTORS

    Abstract: marking code BC marking 5A
    Text: PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type S BC 807-16 S BC 807-25 S BC 807-40 Marking


    OCR Scan     		103mA BC 194 TRANSISTORS marking code BC marking 5A PDF

    pt1017

    Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253


    Original     		El00-KIT-ND J200-KIT-ND 1600-KIT-ND 1601-KIT-ND 1602-KIT-ND 1603-KIT-ND 1604-KIT-ND 923000-I-ND 10514-ND 10522-ND pt1017 mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490 PDF

    marking 5A

    Abstract: BC807 itt ITT Intermetall
    Text: BC807, BC808 PNP Silicon Epitaxial Planar Transistors for switching, A F driver and amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. Top View These transistors are subdivided into three groups -16, -25 and -40 according to their current gain.


    OCR Scan     		BC807, BC808 BC817 BC818 BC807-16 BC808-16 OT-23 marking 5A BC807 itt ITT Intermetall PDF

    BC807

    Abstract: BC808 SOT23 5C 5F BC 807-25
    Text: BC 807 / BC 808 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


    Original     		OT-23 O-236) UL94V-0 Collect50 BC807 BC808 SOT23 5C 5F BC 807-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC 807 / BC 808 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


    Original     		OT-23 O-236) UL94V-0 PDF

    BC807W

    Abstract: BC808W hFE Group
    Text: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW


    Original     		OT-323 UL94V-0 07-16W 07-25W 07-40W 08-25W 08-40W 08-16W BC807W BC808W hFE Group PDF

    Untitled

    Abstract: No abstract text available
    Text: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW


    Original     		OT-323 UL94V-0 07-16W 08-16W 08-25W 07-25W 07-40W 08-40W PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 Small Signal Transistors PNP FEATURES SOT-23 ♦ PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier " applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,


    OCR Scan     		BC807, BC808 OT-23 BC817 BC818 OT-23 BC807-16 BC808-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100


    Original     		BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BC847B PDF

    marking 5CT sot-23

    Abstract: 5Ct marking code marking code 5cs marking 5Cs BC807-40/5C code marking 5Ct sot-23 MARKING 5ct 5CS marking code sot 23 5Ct marking code sot 23 BC818
    Text: BC807 / BC808 BC807 / BC808 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2007-04-13 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		BC807 BC808 OT-23 O-236) UL94V-0 BC807 BC807-16 marking 5CT sot-23 5Ct marking code marking code 5cs marking 5Cs BC807-40/5C code marking 5Ct sot-23 MARKING 5ct 5CS marking code sot 23 5Ct marking code sot 23 BC818 PDF