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    5A JFET Search Results

    5A JFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DG191AP/B Rochester Electronics LLC DG191 - Dual SPDT, High-Speed Drivers with JFET Switch Visit Rochester Electronics LLC Buy
    DG182AP/B Rochester Electronics DG182 - Dual SPST, High-Speed Drivers with JFET Switch Visit Rochester Electronics Buy
    ISL28210FBZ-T13 Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ-T7A Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation

    5A JFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSFP5N20 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 200V Simple Drive Requirement ID25 =5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP5N20 di/dt60A/S TJ150 width300S;

    MAX713 equivalent

    Abstract: 48V-to-5V 330uH cd54 max756 MAX726 MAX749 440v ac voltage regulator MAX724 max7135 lcd at-101
    Text: Volume Twelve NEWS BRIEFS Maxim reports record revenues for the fourth quarter 1993 2 IN-DEPTH ARTICLE Fault-tolerant CMOS multiplexers offer "best buy" protection 3 DESIGN SHOWCASE 48V-to-5V dc-dc converter borrows power from phone lines 8 Switch-mode battery charger delivers 5A


    Original     		PDF MAX187/189) MAX509/510) LT1013/1014/1178/1179) LT1016/11ce MAX805L MAX813L MAX667 MAX813L. MAX713 equivalent 48V-to-5V 330uH cd54 max756 MAX726 MAX749 440v ac voltage regulator MAX724 max7135 lcd at-101

    transistor CB 945

    Abstract: 8508901YX 8508902YX ELH0101 ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD
    Text: Power Operational Amplifier Features General Description  5A peak 2A continuous output current  10 V ms slew rate  300 kHz power bandwidth  850 mW standby power g 15V supplies  300 pA input bias current  Virtually no crossover distortion  2 ms settling time to 0 01%


    Original     		PDF MIL-STD-883 ELH0101 883are transistor CB 945 8508901YX 8508902YX ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor

    SEMISOUTH

    Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
    Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC


    Original     		PDF -55oC 200oC 260oC* MIL-PRF-19500 O-257) O-257 SEMISOUTH 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045

    Amplifiers

    Abstract: 12v 100w amplifier mosfet 20mhz power piezo amplifier driver -audio input 220v and output 4v power amplifier for sonar sonar 200khz QA451 QA453 alarm sonar
    Text: QA 452 High Voltage Amplifier Rev 1.0 Shortform Datasheet Features: • High Voltage, High Speed Amplifier • JFET Input • High Gain Bandwith Product: 20MHz • Rugged MOSFET output stage • Shutdown w. high impedance output and reduced current consumption


    Original     		PDF 20MHz 1Vpp/200kHz/50 Amplifiers 12v 100w amplifier mosfet 20mhz power piezo amplifier driver -audio input 220v and output 4v power amplifier for sonar sonar 200khz QA451 QA453 alarm sonar

    5-pin smd Voltage Regulators

    Abstract: RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH
    Text: SPACE QUALIFIED PRODUCTS RADIATION HARD AMPLIFIERS Part type RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07 RH07CDICE RH1013M RH1013DICE RH1014M MSK114RH RH108A RH108ADICE RH27AE RH27E RH27C RH27CDICE RH1056A RH1056DICE RH1498M RH1498DICE MSK198RH


    Original     		PDF RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07CDICE RH1013M RH1013DICE RH1014M 5-pin smd Voltage Regulators RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH

    ASJD1200R045

    Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R045 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth silicon carbide JFET silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258

    SiC JFET

    Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R045 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth 5A JFET SEMISOUTH SJDP

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    jfet transistor

    Abstract: lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode
    Text: www.Lovoltech.com PWRLITE-LS201N N-Channel Power JFET Transistor for Notebook Battery Applications Features Applications Description The JFET transistor from Lovoltech is an ideal switch for battery operated products. The device presents a Low Rdson allowing for


    Original     		PDF PWRLITE-LS201N jfet transistor lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode

    5962R8961002VHA

    Abstract: rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 RH6105 RH1014MW 5962R0920602 LDO spice model
    Text: SPACE QUALIFIED PRODUCTS SINGLE AMPLIFIERS Part type    3-Oct-12 LF198H LM101AH LM101AJ8 LM101AW RH101AH RH101AJ8 RH101AW RH101ADICE MSK0041RH MSK106RH OP07AH OP07AJ OP07H OP07J RH07H RH07J8 RH07W RH07DICE LM108AH LM108AJ LM108AJ8 LM108AW RH108AH


    Original     		PDF LF198H LM101AH LM101AJ8 LM101AW RH101AH RH101AJ8 RH101AW RH101ADICE MSK0041RH MSK106RH 5962R8961002VHA rh1499mw RH1009MH TID RADIATION TEST OF OP. AMP 5962R8961002VXC 1X10E12 RH6105 RH1014MW 5962R0920602 LDO spice model

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    APT1201R5BVFR

    Abstract: APT1201R5SVFR
    Text: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR APT1201R5SVFR

    SEMISOUTH

    Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
    Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 SEMISOUTH JFET semisouth SiC JFET semisouth JFET

    APT1201R5BFVR

    Abstract: APT1201R5BVFR APT1201R5SFVR
    Text: APT1201R5BFVR APT1201R5SFVR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R5BFVR APT1201R5SFVR O-247 O-247 APT1201R5BVFR APT1201R5BFVR APT1201R5SFVR

    Untitled

    Abstract: No abstract text available
    Text: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR

    IEGT 4500V

    Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm
    Text: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu*, Shigeru Kusunoki*, Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Hideo Iwamoto*, Eric R. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan


    Original     		PDF

    JFET semisouth

    Abstract: SEMISOUTH SiC JFET
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		PDF O-257 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 JFET semisouth SEMISOUTH SiC JFET

    ASJD1200R085

    Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
    Text: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)


    Original     		PDF ASJD1200R085 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R085 O-247 ASJD1200R085 SiC JFET JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085

    psp 1004

    Abstract: No abstract text available
    Text: HIP0061 HARRIS S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor C o m m o n So urce ESD Protected Po wer M O S F E T Array April 1997 Features Description • T h r e e 3>5A P o w e r M O S N - C h a n n e l T r a n s i s t o r s The HIP0061 is a power MOSFET array that consists of


    OCR Scan     		PDF HIP0061 HIP0061 1-800-4-H psp 1004

    Untitled

    Abstract: No abstract text available
    Text: • R r M APT6017WVR A d va n ced po w er Te c h n o l o g y 0.1 7a 600v 31 .sa POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT6017WVR O-267 APT6017W 00A/ps) IL-STD-750

    muA741

    Abstract: 220v ac to 12V 10A SMPS 220V 5A Automatic Voltage Regulator 220V Automatic Voltage Regulator operational amplifier LM234 ac 220V Automatic Voltage Regulator three terminal adjustable voltage regulator LM723 sgs lm723 LM318 regulator lm 471
    Text: ALPHANUMERICAL INDEX Type Number Page Number Function AVS08 Automatic Mains Selector 110/220V AC for SMPS <200W . . . . 57 AVS10 Automatic Mains Selector (110/220V AC) for SMPS <300W . . . . 63 AVS12 Automatic Mains Selector (110/220V AC) for SMPS <500W . . . .


    OCR Scan     		PDF AVS08 AVS10 AVS12 AVS20 C78L00CD L272D L272/M L296/P L297/A L298/N muA741 220v ac to 12V 10A SMPS 220V 5A Automatic Voltage Regulator 220V Automatic Voltage Regulator operational amplifier LM234 ac 220V Automatic Voltage Regulator three terminal adjustable voltage regulator LM723 sgs lm723 LM318 regulator lm 471