AT-42070
Abstract: No abstract text available
Text: Agilent AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42070 is a general purpose NPN bipolar transistor that
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AT-42070
5966-4945E
5989-2654EN
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Untitled
Abstract: No abstract text available
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz
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AT-42070
5965-8912E
5966-4945E
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AT42070
Abstract: AT-42070 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz
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AT-42070
AT-42070
AT42070
RN/50
5965-8912E
5966-4945E
S21E
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Untitled
Abstract: No abstract text available
Text: What 1"UM HEW LETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Tfechnical Data AT-42070 Features different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium
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AT-42070
AT-42070
5965-8912E
59664945E
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