smd transistor pnp 591
Abstract: CMMT591 smd transistor 591
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
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ISO/TS16949
OT-23
CMMT591
C-120
smd transistor pnp 591
CMMT591
smd transistor 591
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smd transistor pnp 591
Abstract: CMMT591
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMMT591
C-120
smd transistor pnp 591
CMMT591
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS
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OT-23
CMMT591
C-120
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PDF
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smd transistor pnp 591
Abstract: SMD IC ts 4141 CMMT591 smd transistor 591 MARKING SMD pnp TRANSISTOR ec
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS
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Original
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OT-23
CMMT591
C-120
smd transistor pnp 591
SMD IC ts 4141
CMMT591
smd transistor 591
MARKING SMD pnp TRANSISTOR ec
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CMMT591 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS
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CMMT591
OT-23
C-120
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PDF
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relay 12v 200 ohm
Abstract: TX2-L2-12 591 smd transistor Matsua Electric Works relay smd transistor 079
Text: TESTING 2 AMP. HIGH CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 FEATURES 7.4 .291 15 .591 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V • High contact capacity: 2 A 30 V DC
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TXD2-3V
Abstract: 5 pin relay 12v 5 V DC RELAY TXD2-2M-12V relay 9v 5v relay 5 pin 8 pin SMD relay 5 pin 12v relay 5 pin 12v relay datasheet 5 pin relay 6v
Text: TX-D HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards EN41003 15 .591 TX-D RELAYS UL File No.: E43149 CSA File No.: LR26550 7.4 .291 8.2 .323 15 .591 • The use of gold-clad twin crossbar contacts ensures high contact
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EN41003)
E43149
LR26550
TXD2-3V
5 pin relay 12v
5 V DC RELAY
TXD2-2M-12V
relay 9v
5v relay 5 pin
8 pin SMD relay
5 pin 12v relay
5 pin 12v relay datasheet
5 pin relay 6v
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PDF
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smd transistor 591
Abstract: 591 smd transistor Transistor smd marking 1a sot-23 TRANSISTOR SMD 1a 9 FMMT591
Text: Transistors IC SMD Type Medium Power Transistor FMMT591 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base
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Original
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FMMT591
OT-23
-100mA
-500mA
-50mA
100MHz
smd transistor 591
591 smd transistor
Transistor smd marking 1a sot-23
TRANSISTOR SMD 1a 9
FMMT591
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PDF
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Transistor smd 338
Abstract: TXD2-2M-12V LR26550 TXD2-12V TXD2-24V TXD2-H-12V TXD2-H-24V TXD2-L-12V TXD2-L-24V
Text: TX-D HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards EN41003 15 .591 TX-D RELAYS UL File No.: E43149 CSA File No.: LR26550 7.4 .291 8.2 .323 15 .591 • The use of gold-clad twin crossbar contacts ensures high contact
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Original
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EN41003)
E43149
LR26550
Transistor smd 338
TXD2-2M-12V
LR26550
TXD2-12V
TXD2-24V
TXD2-H-12V
TXD2-H-24V
TXD2-L-12V
TXD2-L-24V
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC Transistor SMD Type Product specification FMMT591 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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Original
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FMMT591
OT-23
Power-60V
-100mA
-500mA
-50mA
100MHz
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PDF
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smd transistor pnp 591
Abstract: No abstract text available
Text: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT591 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2
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FZT591
OT-223
-100mA
-500mA
-50mA
100MHz
smd transistor pnp 591
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PDF
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TX2-L2-12
Abstract: DC60W Transistor smd 338 TX2S-24
Text: TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 8.2 .323 15 .591 7.4 .291 8.4 .331 mm inch TX RELAYS FEATURES • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V
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004dia.
TX2-L2-12
DC60W
Transistor smd 338
TX2S-24
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PDF
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TX2-L2-12
Abstract: 071oz
Text: TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 8.2 .323 15 .591 7.4 .291 8.4 .331 mm inch TX RELAYS FEATURES • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V
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Original
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004dia.
TX2-L2-12
071oz
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PDF
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Untitled
Abstract: No abstract text available
Text: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V
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004dia.
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PDF
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tx2 relay
Abstract: No abstract text available
Text: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V
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RELAY NAIS TX2
Abstract: NAIS tx2-L2-5 TX2S-48 datasheet relay NAIS 5v 5 pin nais relay 24V r relay TX2-L2-12 TX2S-12
Text: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V
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Original
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004dia.
RELAY NAIS TX2
NAIS tx2-L2-5
TX2S-48
datasheet relay NAIS 5v 5 pin
nais relay 24V r relay
TX2-L2-12
TX2S-12
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PDF
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relay tx-2
Abstract: TX2-24V 300108J TX2-12V TX2-48V TX2-H-12V TX2-H-24V TX2-H-48V TX2-L-12V TX2-L2-12V
Text: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE BREAKDOWN VOLTAGE & HIGH BREAKDOWN VOLTAGE FEATURES 1. 2,000 V breakdown voltage between contact and coil The body block construction of the coil that is sealed at formation offers a high breakdown voltage of 2,000 V between
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140mW
300108J
relay tx-2
TX2-24V
300108J
TX2-12V
TX2-48V
TX2-H-12V
TX2-H-24V
TX2-H-48V
TX2-L-12V
TX2-L2-12V
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PDF
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TXD2-2M-5V
Abstract: TXD2-3V TXD2-5V txd2 TXD2-2M-12V
Text: TX-D TESTING HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards (EN41003 TX-D RELAYS FEATURES 15 .591 8.2 .323 15 .591 • 2,000 V breakdown voltage between contact and coil. • Outstanding surge resistance. Surge withstand between open contacts:
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Original
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EN41003)
TXD2-2M-5V
TXD2-3V
TXD2-5V
txd2
TXD2-2M-12V
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PDF
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TXD2-2M-5V
Abstract: NAIS TXD2-12V NAIS Relay TXD2 TXD2-3V datasheet relay NAIS 5v 5 pin TXD2-5V NAIS Relay 5v txd2 nais relay 24V 10 A NAIS Relay 4.5v
Text: TX-D TESTING HIGH INSULATION RELAYS Conforming to the supplementary insulation class of EN Standards (EN41003 TX-D RELAYS FEATURES • Approved to the supplementary insulation class in the EN standards (EN41003). The insulation distance between the contact and coil meet the supplementary
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Original
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EN41003)
EN41003
004dia.
TXD2-2M-5V
NAIS TXD2-12V
NAIS Relay TXD2
TXD2-3V
datasheet relay NAIS 5v 5 pin
TXD2-5V
NAIS Relay 5v
txd2
nais relay 24V 10 A
NAIS Relay 4.5v
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PDF
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Untitled
Abstract: No abstract text available
Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
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OCR Scan
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bh53131
00E3T77
BST120
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PDF
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MARKING SMD transistor 12X
Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
Text: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
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OCR Scan
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BST120
7Z94272
7Z21S40
MARKING SMD transistor 12X
smd transistor marking HA
TRANSISTOR SMD MARKING 2 HA
transistor marking 12x
transistor smd marking BA 26
smd 37e
BST120
smd transistor 591
D-MOS transistor p-channel
smd transistor marking 2U
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PDF
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bvc62
Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum
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OCR Scan
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BLV859
OT262B
711002b
OT262B.
711Dfi5b
bvc62
transistor BD 139
Transistor 5332
bvc62 smd
philips 2322 734
UT70-25
smd transistor k2
2222 500 16641
transistor BD B1 SMD
u 9330
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PDF
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smd transistor pnp 591
Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile
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OCR Scan
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BLV857
OT324B
smd transistor pnp 591
smd transistor xf
philips 2322 734
transistor bd139
philips SMD resistor 805
smd transistor 912
smd L17 npn
bd139 smd
SMD transistor L17
912 smd transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ 72L I nf ineon technologic» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type ^DS h flDS on Package Ordering Code BUZ 72 L 100 V 10 A 0.2 £2 TO-220 AB C67078-S1327-A2 Maximum Ratings Parameter Symbol
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OCR Scan
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O-220
C67078-S1327-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
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PDF
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