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    584 MMIC Search Results

    584 MMIC Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
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    584 MMIC Price and Stock

    TDK Corporation MMICT5848-00-012

    MEMS Microphones Bottom Port I2S Digital Output Multi-Mode Microphone
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MMICT5848-00-012 2,027
    • 1 $2.1
    • 10 $1.74
    • 100 $1.42
    • 1000 $1.16
    • 10000 $1.14
    		Buy Now

    Analog Devices Inc EV-RADAR-MMIC2

    Distance Sensor Development Tool 24 GHz VCO and PGA with 2-Channel PA Output
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EV-RADAR-MMIC2 1
    • 1 $775.24
    • 10 $775.24
    • 100 $775.24
    • 1000 $775.24
    • 10000 $775.24
    		Buy Now

    584 MMIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fmm5051

    Abstract: No abstract text available
    Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)


    Original     		PDF FMM5051VF FMM5051VF fmm5051

    Untitled

    Abstract: No abstract text available
    Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)


    Original     		PDF FMM5051VF FMM5051VF FCSI0501M200

    150759

    Abstract: 110GHZ
    Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)


    Original     		PDF FMM5051VF FMM5051VF FCSI0501M200 150759 110GHZ

    FUJITSU MMIC LNA

    Abstract: FMM5701LG lg s12 mmic case styles 26GHz LNA fmm5701
    Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the


    Original     		PDF FMM5701LG 24GHz 18-24GHz FMM5701LG 18-24GHz FCSI0999M200 FUJITSU MMIC LNA lg s12 mmic case styles 26GHz LNA fmm5701

    diode Free 18-24GHz

    Abstract: FMM5701LG FUJITSU MMIC LNA
    Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the


    Original     		PDF FMM5701LG 24GHz 18-24GHz FMM5701LG 18-24GHz FCSI0999M200 diode Free 18-24GHz FUJITSU MMIC LNA

    Untitled

    Abstract: No abstract text available
    Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)


    Original     		PDF FMM5051VF FMM5051VF

    FMM5701LG

    Abstract: 26GHz LNA nf 931 24ghz FMM5701X mmic n1 diode Free 18-24GHz 584 amplifer 584 MMIC microwave databook
    Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION


    Original     		PDF FMM5701LG 20GHz 24GHz 18-24GHz FMM5701LG 18-24GHz 26GHz LNA nf 931 24ghz FMM5701X mmic n1 diode Free 18-24GHz 584 amplifer 584 MMIC microwave databook

    RF LNA 10 GHz

    Abstract: No abstract text available
    Text: GaAs MMIC CMY 191 Preliminary Data Sheet Ultralinear Mixer with integrated high IP3I LNA and LO-Buffer for PCS-CDMA receiver applications. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA; f = 1.96 GHz; @


    Original     		PDF P-TSSOP-10-2 Q62702-M23 GPS09230 RF LNA 10 GHz

    Untitled

    Abstract: No abstract text available
    Text: HMMC-1002 DC–50 GHz Variable Attenuator Data Sheet Description The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using MWTC’s MMICB process which features an MBE epitaxial layer, backside ground vias,


    Original     		PDF HMMC-1002 HMMC-1002 HMMC1002 5965-5452E 5988-1892EN

    TC721A

    Abstract: No abstract text available
    Text: HMMC-1002 DC–50 GHz Variable Attenuator Data Sheet Description Features The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using MWTC’s MMICB process which features an MBE epitaxial layer, backside ground vias, and FET


    Original     		PDF HMMC-1002 HMMC-1002 5965-5452E AV02-3628EN TC721A

    ALC 887

    Abstract: No abstract text available
    Text:  DC-50 GHz Variable Attenuator HMMC-1015 Features • Specified Frequency Range: DC-26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB • Maximum Attenuation: 30.0 dB Description The HMMC-1015 is a monolithic, voltage variable, GaAs


    Original     		PDF DC-50 HMMC-1015 DC-26 HMMC-1015HMMC-1015/rev ALC 887

    Untitled

    Abstract: No abstract text available
    Text: HMMC-1015 DC–50 GHz Variable Attenuator Data Sheet Description The HMMC-1015 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. The distributed topology of the HMMC-1015 minimizes the parasitic effects of its series and shunt FETs,


    Original     		PDF HMMC-1015 HMMC-1015 5968-4446E 5988-2547EN

    ALC 887

    Abstract: HMMC-1015 hmmc 1015
    Text: Agilent HMMC-1015 DC–50 GHz Variable Attenuator 1GG7-8008 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Pin –1 dB : 27 dBm @ 500 MHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size:


    Original     		PDF HMMC-1015 1GG7-8008 5989-6202EN ALC 887 hmmc 1015

    Untitled

    Abstract: No abstract text available
    Text: DC – 50 GHz Variable Attenuator Technical Data HMMC-1015 Features • Specified Frequency Range: DC – 26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB 1470 x 610 µm (57.9 x 24.0 mils) ±10 µm (±0.4 mils)


    Original     		PDF HMMC-1015 HMMC-1015 5968-4446E

    nec 16312

    Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
    Text: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan


    Original     		PDF PC1677 PC2708 PC2762/2763 PC2771/2776 P12152EJ2V0AN00 an88-6130 nec 16312 c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011

    ALC 887

    Abstract: 1GG7
    Text: Agilent HMMC-1002 DC–50 GHz Variable Attenuator 1GG7-8001 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size: Chip size tolerance: Chip thickness:


    Original     		PDF HMMC-1002 1GG7-8001 5989-6201EN ALC 887 1GG7

    Untitled

    Abstract: No abstract text available
    Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1,7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION


    OCR Scan     		PDF FMM5701LG 20GHz 24GHz 18-24GHz FMM5701LG 18-24GHz FCSI0598M200

    LNA marking D d

    Abstract: MARKING GC INFINEON discrete LNA D
    Text: Infineon technologies GaAs MMIC CMY191 Preliminary Data Sheet • Ultralinear Mixer with integrated high IP3\ LNA and LO-Buffer for PCS-CDMA receiver applica­ tions. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA;/ = 1.96 GHz; @


    OCR Scan     		PDF CMY191 Q62702-M23 P-TSSOP-10-2 LNA marking D d MARKING GC INFINEON discrete LNA D

    UPC1678

    Abstract: UPC1678B
    Text: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES_ • HIGH OUTPUT POWER:+18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz


    OCR Scan     		PDF UPC1678B UPC1678G UPC1678P UPC1678G) UPC1678 UPC1678B) UPC1678B, UPC1678G, UPC1678P

    UPC1678B

    Abstract: UPC167 UPC1678
    Text: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES • HIGH OUTPUT POWER: +18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz


    OCR Scan     		PDF UPC1678B UPC1678G UPC1678P UPC1678G) UPC1678 UPC1678B) UPC1678B, UPC1678G, UPC167

    Untitled

    Abstract: No abstract text available
    Text: GaAs FET MMIC Products Capability Guide CUSTOM MMIC PRODUCTS — MA4GM400 SERIES DIGITAL STEP ATTENUATORS SWITCHED ELEMENT 0.3 MHz TO 2.0 GHz SWITCHED LINE PHASE SHIFTERS (500 MHz — 2.0 GHz) 1 o— CAN BE SUPPLIED WITH CMOS DRIVERS - o J, ?i ? i i i i


    OCR Scan     		PDF MA4GM400

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS «PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /¿PC2745TB and /¿PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile


    OCR Scan     		PDF PC2745TB, //PC2746TB PC2745TB PC2746TB //PC2745TB //PC2746TB //PC2745T/ PC2746T PC2745TB/iuPC2746TB //PC2745T///PC2746T.

    2745T

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile


    OCR Scan     		PDF uPC2745TB uPC2746TB //PC2745TB //PC2746TB //PC2745T/ //PC2746T //PC2745TB///PC2746TB //PC2745T///PC2746T. 2745T

    TPM1919-40

    Abstract: No abstract text available
    Text: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point


    OCR Scan     		PDF TPM1919-40 170mA TPM1919-40