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    5807N Search Results

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    5807N Price and Stock

    TDK Electronics B65807N0400A048

    FERRITE CORE RM 400NH N48 2PCS
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    DigiKey B65807N0400A048 Box 3,476 1
    • 1 $2.18
    • 10 $1.497
    • 100 $1.012
    • 1000 $1.012
    • 10000 $1.012
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    Newark B65807N0400A048 Bulk 1
    • 1 $6.68
    • 10 $5.9
    • 100 $4.47
    • 1000 $3.59
    • 10000 $3.34
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    TDK Electronics B65807N0315A048

    FERRITE CORE RM 315NH N48 2PCS
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    DigiKey B65807N0315A048 Box 2,040 1
    • 1 $3.57
    • 10 $2.442
    • 100 $1.5766
    • 1000 $1.575
    • 10000 $1.575
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    TDK Electronics B65807N0040A001

    FERRITE CORE RM 40NH K1 2PCS
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    DigiKey B65807N0040A001 Box 2,032 1
    • 1 $6.16
    • 10 $4.165
    • 100 $3.4432
    • 1000 $3.4432
    • 10000 $3.4432
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    Newark B65807N0040A001 Bulk 1,960 1
    • 1 $5.49
    • 10 $4.68
    • 100 $3.81
    • 1000 $3.78
    • 10000 $3.78
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    TDK Electronics B65807N0100A033

    FERRITE CORE RM 100NH M33 2PCS
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    DigiKey B65807N0100A033 Box 1,791 1
    • 1 $4.04
    • 10 $2.756
    • 100 $1.8459
    • 1000 $1.8459
    • 10000 $1.8459
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    TDK Electronics B65807N0250A048

    FERRITE CORE RM 250NH N48 2PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B65807N0250A048 Box 1,278 1
    • 1 $3.57
    • 10 $2.442
    • 100 $1.5766
    • 1000 $1.575
    • 10000 $1.575
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    Newark B65807N0250A048 Bulk 3,409 1
    • 1 $3.93
    • 10 $3.78
    • 100 $3.21
    • 1000 $3.13
    • 10000 $3.13
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    TME B65807N0250A048 2,000
    • 1 -
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    • 1000 -
    • 10000 $1.46
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    5807N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UF 5807

    Abstract: D5807N
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 5807 N Kathode Cathode 1,2 8 0,5 3,5 1,2 0,5 ø 57 ø57 Anode 72 max. 7 3 VW K July 1996 D 5807 N Elektrische Eigenschaften Electrical properties


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 5807N, 5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − 5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NTD5807N, NVD5807N NTD5807N/D

    369D

    Abstract: No abstract text available
    Text: 5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original
    PDF NTD5807N NTD5807N/D 369D

    Untitled

    Abstract: No abstract text available
    Text: 5807N, 5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − 5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NTD5807N, NVD5807N NTD5807N/D

    UF 5807

    Abstract: D5807N 096n
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 5807 N Kathode Cathode 1,2 8 0,5 3,5 1,2 0,5 ø 57 ø57 Anode 72 max. 7 3 VW K July 1996 D 5807 N Elektrische Eigenschaften Electrical properties


    Original
    PDF

    D5807N

    Abstract: No abstract text available
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 5807 N Kathode Cathode 1,2 8 0,5 3,5 1,2 0,5 ø 57 ø57 Anode 72 max. 7 3 VW K July 1996 D 5807 N Elektrische Eigenschaften Electrical properties


    Original
    PDF

    NVD5807NT4G

    Abstract: No abstract text available
    Text: 5807N, 5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − 5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NTD5807N, NVD5807N AEC-Q101 NTD5807N/D NVD5807NT4G

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G qt912
    Text: 5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 40 V CCFL Backlight DC Motor Control


    Original
    PDF NTD5807N NTD5807N/D 07NG 5807N 369D NTD5807N NTD5807NT4G qt912

    D5807N

    Abstract: UF 5807
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 5807 N Kathode Cathode 1,2 8 0,5 3,5 1,2 0,5 ø 57 ø57 Anode 72 max. 7 3 VW K July 1996 D 5807 N Elektrische Eigenschaften Electrical properties


    Original
    PDF

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G C3129
    Text: 5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original
    PDF NTD5807N NTD5807N/D 07NG 5807N 369D NTD5807N NTD5807NT4G C3129

    Untitled

    Abstract: No abstract text available
    Text: 5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification


    Original
    PDF NTD5807N NTD5807N/D

    Untitled

    Abstract: No abstract text available
    Text: D 5807N 55E EUPEC D • TvDsnreihe/Tvoe range D 5807 N Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte Periodische Spitzensperrspannung Effektiver • fr m s m DurchlaBstrom Dauergrenzstrom I favm Maximum permissible values 3 4 0 3 2 *1 ?


    OCR Scan
    PDF 5807N D448N. T-91-20 D1509N.

    D405N

    Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
    Text: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC


    OCR Scan
    PDF G0D132T t-10r BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D3507N D405N AEG T 51 N 1200 AEG D 251 N 1200 d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200

    Untitled

    Abstract: No abstract text available
    Text: jm m a KmmJI I a I jmmm jh l jmmm L J I European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 5807 N Kathode Anode V W K July 1996 H ö ch stzu lässig e W erte M axim um rated values Periodische Spitzensperrspannung


    OCR Scan
    PDF