Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)
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CY14B104K,
CY14B104M
44-pin
54-pin
CY14B104K)
CY14B104M)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B104K, CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16
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CY14B104K,
CY14B104M
8/256K
CY14B104K)
CY14B104M)
54-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B104KA, CY14B104MA 4 Mbit 512K x 8/256K x 16 nvSRAM with Real-Time-Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104KA) or 256K x 16
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CY14B104KA,
CY14B104MA
8/256K
54-pin
CY14B104KA)
CY14B104MA)
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CY14E104N
Abstract: No abstract text available
Text: PRELIMINARY CY14E104L/CY14E104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small
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CY14E104L/CY14E104N
8/256K
CY14E104L/CY14E104N
CY14E104N
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16
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CY14B104K,
CY14B104M
CY14B104K)
CY14B104M)
44-pin
54-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14E104K/CY14E104M 4-Mbit 512K x 8 / 256K x 16 nvSRAM with Real-Time-Clock Features • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104K) or 256K x 16 (CY14E104M) ■ Hands off automatic STORE on power down with only a small
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CY14E104K/CY14E104M
CY14E104K)
CY14E104M)
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)
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CY14B104K,
CY14B104M
CY14B104K)
CY14B104M)
44-pin
54-pin
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)
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CY14B104K,
CY14B104M
44-pin
54-pin
CY14B104K)
CY14B104M)
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TSOP II 54
Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small
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CY14B104L,
CY14B104N
8/256K
CY14B104L/CY14B104N
TSOP II 54
TSOP 48 thermal resistance junction to case
TSOP 48 thermal resistance
TSOP 54 thermal resistance
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DIODE 310F
Abstract: r5520h
Text: R5520H SERIES USB HIGH-SIDE POWER SWITCH NO.EA-091-111108 OUTLINE The R5520H is CMOS-based high-side MOSFET switch IC for Universal Serial Bus USB applications. Low ON Resistance (Typ.100mΩ) and low supply current (Typ.20 A at active mode) are realized in this IC.
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R5520H
EA-091-111108
Room403,
Room109,
DIODE 310F
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5609 dec transistor
Abstract: nxft15xh103 NTC thermistor 3380 b 10k ohm
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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R44E-15
5609 dec transistor
nxft15xh103
NTC thermistor 3380 b 10k ohm
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Untitled
Abstract: No abstract text available
Text: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small
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CY14B104L,
CY14B104N
8/256K
CY14B104L/CY14B104N
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real Time Clock Features • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16 (CY14B104M) ■ Hands off automatic STORE on power down with only a small
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CY14B104K,
CY14B104M
8/256K
54-pin
CY14B104K)
CY14B104M)
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271024
Abstract: 82524
Text: CY14B104K, CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 25 ns and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 512K x 8 (CY14B104K) or 256K x 16 (CY14B104M)
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CY14B104K,
CY14B104M
8/256K
CY14B104K)
CY14B104M)
54-Pin
271024
82524
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B104K/CY14B104M 4-Mbit 512K x 8/256K x 16 nvSRAM with Real-Time-Clock Features • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16 (CY14B104M) ■ Hands off automatic STORE on power down with only a small
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CY14B104K/CY14B104M
8/256K
CY14B104K)
CY14B104M)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B104L, CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small
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CY14B104L,
CY14B104N
8/256K
CY14B104L)
CY14B104N)
CY14B104L/CY14B104N
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Untitled
Abstract: No abstract text available
Text: R5520H SERIES USB HIGH-SIDE POWER SWITCH NO.EA-091-130827 OUTLINE The R5520H is CMOS-based high-side MOSFET switch IC for Universal Serial Bus USB applications. Low ON Resistance (Typ.100mΩ) and low supply current (Typ.20 A at active mode) are realized in this IC.
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R5520H
EA-091-130827
Room403,
Room109,
10F-1,
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block diagram for automatic room power control
Abstract: TAA CAPACITOR CY14B101L CY14B101L-SP25XCT CY14B101L-SZ25XCT CY14B101L-SZ35XCT
Text: PRELIMINARY CY14B101L 1-Mbit 128K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns, and 45 ns Access Times • “Hands-off” Automatic STORE on Power-down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is initiated by Software, device pin or Autostore™ on
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CY14B101L
200-ns
CY14B101L
block diagram for automatic room power control
TAA CAPACITOR
CY14B101L-SP25XCT
CY14B101L-SZ25XCT
CY14B101L-SZ35XCT
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nxft15xh103
Abstract: NCP15WF104F03 NTC 50-11 thermistor sensor NCP18XV NCP15WF104D NCP03WF104F05RL NCP18WF104D NCP18WB473D 99029 transistor NTC 15 0718
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.
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R44E-14
nxft15xh103
NCP15WF104F03
NTC 50-11 thermistor sensor
NCP18XV
NCP15WF104D
NCP03WF104F05RL
NCP18WF104D
NCP18WB473D
99029 transistor
NTC 15 0718
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real Time Clock Features • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16 (CY14B104M) ■ Hands off automatic STORE on power down with only a small
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CY14B104K,
CY14B104M
8/256K
54-pin
CY14B104K)
CY14B104M)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B104K/CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real-Time-Clock Features • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16 (CY14B104M) ■ Hands off automatic STORE on power down with only a small
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CY14B104K/CY14B104M
8/256K
44/54-pin
CY14B104K)
CY14B104M)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small
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CY14B104L,
CY14B104N
8/256K
CY14B104L/CY14B104N
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B256L 256-Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns, 35 ns and 45 ns Access Times • “Hands-off” Automatic STORE on Power Down with only a small capacitor • STORE to QuantumTrap Nonvolatile Elements is initiated by Software, device pin, or Autostore™ on
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CY14B256L
256-Kbit
20-Year
CY14B256L
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TSOP 54 Package
Abstract: CY14B104L CY14B104N
Text: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small
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CY14B104L,
CY14B104N
8/256K
CY14B104L)
CY14B104N)
CY14B104L/CY14B104N
TSOP 54 Package
CY14B104L
CY14B104N
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