572 TRANSISTOR Search Results

65W ac adapter schematic

Abstract: drv 8807 65W 18.5V ac adapter schematic RLTI-1099
Contextual Info: Using the UCC28630EVM-572 User's Guide Literature Number: SLUUAX9B February 2014 – Revised April 2015 User's Guide SLUUAX9B – February 2014 – Revised April 2015 UCC28630EVM-572, 65-W Nominal, 130-W Peak, Primary-Side Regulated Adapter Module 1 Introduction

Contextual Info: Whol HEWLETT mL'HÆPACKARD Avantek Products Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses

RLTI-1099

Abstract: 65W 18.5V ac adapter schematic
Contextual Info: Using the UCC28630EVM-572 User's Guide Literature Number: SLUUAX9A February 2014 – Revised May 2014 User's Guide SLUUAX9A – February 2014 – Revised May 2014 UCC28630EVM-572, 65-W Nominal, 130-W Peak, PrimarySide Regulated Adapter Module 1 Introduction

Contextual Info: Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses resistive feedback and active bias for temperature compensation

A966 transistor

Abstract: transistor a966 A966
Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500␣MHz The 572 Series is a medium-gain bipolar RF amplifier that uses resistive feedback and active bias

Contextual Info: • 7 0 2 0 ^ 000023b b ?b ■ RHH RPI-572 ■ k ^ U /S e n s o rs RPI-572 * h < > iî7 ^ Photointerrupter • ÿW ^jÈHI/D im ensions Unit : mm RPI-572 t t , - i- m * G a A s ^ fl-S ê h h 7 > v 7 ÿ i fê ffl Ix /d S f l R * - * lif t * gebmf > 0.5

Contextual Info: Thai HEWLETT mL'HMPACKARD Avantek Products Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTOAJTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses

HP2.811

Abstract: UTC572
Contextual Info: Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses resistive feedback and active bias for temperature compensation

Contextual Info: TO SHIBA TLP572 TOSHIBA PHOTOCOUPLER TI P IRED & PHOTO-TRANSISTOR 571 PRO GRAM M ABLE CONTROLLERS U n it in mm AC/ DC - INPUT MODULE <;ni in <;tatf rfi ay The TU SilltiA TJ_i1j 572 consists of a dariington connected phototransistor optically coupled to a gallium arsenide infrared em itting

AVANTEK uto

Abstract: Avantek* UTC
Contextual Info: Q avantek UTO/UTC 572 Series Thin-Film Cascadable Amplifier 50 to 500 MHz FEATURES APPLICATIONS • • • • • IF/RF Amplification • Pre-Mixer RF Stage • Post LO Amplifier Stage Frequency Range: 50 to 500 MHz High Reverse Isolation: 50 dB LowVSW R

BK 1085

Abstract: Avantek UTC 1023 Avantek amplifier UTC AVANTEK ina transistor 2sc 1586 Avantek* UTC UTC572 Avantek amplifier ut Avantek rf amplifier G503S
Contextual Info: AVANTEK INC A V Â M 44Ê UTO/UTC 572 Series Thin-Film Cascadable Amplifier 50 to 500 MHz T E K .APPLICATIONS FEATURES • • • • DDDflaSS a B A V A D • IF/RF Amplification • Pre-Mixer RF Stage • Post LO Amplifier Stage Frequency Range: 50 to 500 MHz

Contextual Info: APEX M I C R O T E C H N O L O G Y CORP n c ; ^ , . P b7E D Dfl7flb3t 0 0 0 1 5 1 5 572 4a P jy F IE R S , , . APIT . PAIO • PAIOA APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 8 0 0 546-A PEX 8 0 0 - 5 4 6 - 2 7 3 9 FEATURES • • • •

15Vdc regulator circuit diagram

Abstract: NC572 NC530 17 VOLTS TO 14 VOLTS REGULATOR NC531 NC562 NC562B NC573 NC581 NC583
Contextual Info: C IR C U IT D IA G R A M Case 57 0 .6 in. low p ro fil« TO-8 D E S C R IP T IO N The N C 572 is a d u a l v o lta g e r e g u la to r p ro v id in g tw o is o la te d a nd in d e p e n d e n t c o n tro l s e c tio n s o f c o m p le m e n ta ry p o la rity . O u tp u t v o lta g e s a re in te r n a lly p re s e t to + 1 5 and

SP571

Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Contextual Info: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

ic 4580

Abstract: SL 100 NPN Transistor hfe 4053 4833 4834 ITO-220 2SC3162 2SC4051 2SC4663
Contextual Info: H ig h S p e e d S w it c h in g T r a n s is t o r s F3 s er ie s Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings Part No. VCEO EIAJ No. VCBO VCEO V ebo Ic IB Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 (sus) (min)

ALR060

Abstract: ASI10513 1402 Transistor
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

TH3L10

Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Contextual Info: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

nec 2412

Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

transistor

Abstract: Transistors General 2SC241ZK transistors transistor 571 Silicon General NPN/PNP transistor CHIP TRANSISTOR pnp and npn pdf of transistors npn pnp
Contextual Info: Transistors General purpose transistor dual transistors UMZ1N / IMZ1A FFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

f 7732

Abstract: A8140
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TRANSISTOR SMD kl3

Abstract: amplifier 446 mhz pmr equivalent transistor bce 243 KL3 SMD diode DIODE SMD b14 error monitor comparator multiplexer parity smd TRANSISTOR code b6 square d starter type sc03 TRANSISTOR SMD m3a 2CM06
Contextual Info: REJ09B0458-0010 R8C/32A Group 16 Hardware Manual RENESAS MCU M16C FAMILY / R8C/Tiny SERIES Preliminary All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

ASI10552

Abstract: AVD002F
Contextual Info: AVD002F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG B A DESCRIPTION: .100 X 45° ØD .088 x 45° CHAMFER The ASI AVD002F is Designed for C B FEATURES: • • • Omnigold Metalization System E F G H I MAXIMUM RATINGS 250 mA IC J K MAXIMUM