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    5655E Search Results

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    5655E Price and Stock

    Ohmite Mfg Co OK5655E-R52

    RES 5.6M OHM 5% 1/4W AXIAL
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    DigiKey OK5655E-R52 Reel 50,000
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    Mouser Electronics OK5655E-R52
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    Newark OK5655E-R52 Reel 50,000
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    RS OK5655E-R52 Bulk 23 Weeks 50,000
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    Richardson RFPD OK5655E-R52 50
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    Master Electronics OK5655E-R52
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    Ohmite Mfg Co OL5655E-R52

    RES 5.6M OHM 5% 1/2W AXIAL
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    DigiKey OL5655E-R52 Reel 40,000
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    Mouser Electronics OL5655E-R52 17,725
    • 1 $0.14
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    • 100 $0.039
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    Newark OL5655E-R52 Reel 40,000
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    RS OL5655E-R52 Bulk 23 Weeks 40,000
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    Richardson RFPD OL5655E-R52 40
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    Master Electronics OL5655E-R52
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    Ohmite Mfg Co OM5655E-R58

    RES 5.6M OHM 5% 1W AXIAL
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    DigiKey OM5655E-R58 Reel 25,000
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    Mouser Electronics OM5655E-R58
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    Newark OM5655E-R58 Reel 25,000
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    RS OM5655E-R58 Bulk 23 Weeks 25,000
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    Richardson RFPD OM5655E-R58 25
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    Master Electronics OM5655E-R58
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    Microchip Technology Inc SMCJ5655E3/TR13

    Diode TVS Single Uni-Dir 66.4V 1.5KW 2-Pin DO-214AB T/R - Tape and Reel (Alt: SMCJ5655E3/TR13)
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    Avnet Americas SMCJ5655E3/TR13 Reel 3,000
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    Microchip Technology Inc SMCG5655E3/TR13

    Diode TVS Single Uni-Dir 66.4V 1.5KW 2-Pin DO-215AB T/R - Tape and Reel (Alt: SMCG5655E3/TR13)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SMCG5655E3/TR13 Reel 3,000
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    5655E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1855E

    Abstract: No abstract text available
    Text: Little Rebel Carbon Film Resistors, 5% Tolerance Available in E24 Ohmic values; RoHS Compliant 1.102" / 28.00mm Series OJ OK OL OM ON Wattage Ohms 0.125 1.0-1M 0.250 1.0-10M 0.500 1.0-10M 1.00 1.0-10M 2.00 1.0-10M L D Max. Dimensions in. / mm Working


    Original
    PDF 0-10M 0-10M 1-866-9-OHMITE 1855E

    transistor BC 567

    Abstract: f36 transistor ED-7 transistor BC 339
    Text: AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    PDF AO5404E AO5404E/L AO5404E AO5404EL -AO5404EL SC89-3L 56555E 5655E 3D6953 D91A3 transistor BC 567 f36 transistor ED-7 transistor BC 339

    transistor BC 567

    Abstract: transistor BC 568 5E55
    Text: AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    PDF AO5804E AO5804E/L AO5804E AO5804EL -AO5804EL SC-89-6 Volt56555E 5655E 3D6943 D91A3 transistor BC 567 transistor BC 568 5E55