130300
Abstract: 15000F
Text: V i sh ay I n tertech n o l o g y, I n c . Capacitors - Aluminum Electrolytic in Insulated Case I INNOVAT AND TEC O L OGY 500 PGP-ST Series N HN VISHAY BCcomponents O 19 62-2012 500 PGP-ST Series General-Purpose Power Aluminum Capacitors with Screw Terminals
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VMN-PT0247-1204
130300
15000F
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Untitled
Abstract: No abstract text available
Text: V ishay I ntertechnology, I nc . I INNOVAT AND TEC O L OGY MONO-K AP N HN Ceramic Capacitors O 19 62-2012 Capacitors - High Capacitance in Small Size K10 Series Multilayer Ceramic Dipped Radial Capacitors Key Benefits • High capacitance in small size • Cost effective solution
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2011/65/EU,
K-103-K-10-X7R-F-5-3-H-5
VMN-PT9161-1202
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UPS circuit diagram pcb
Abstract: No abstract text available
Text: V is h ay I n t e rt e c h n o l o g y, I n c . I INNOVAT AND TEC O L OGY Power Application Capabilities N HN aluminum electrolytic capacitors O 19 62-2012 Capacitors - Aluminum Electrolytic Aluminum Electrolytic Capacitors in Power Applications Power Applications
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VMN-PL0453-1204
UPS circuit diagram pcb
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PDF
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NF822
Abstract: No abstract text available
Text: V ishay I n tertech n o l o g y, I n c . Capacitors - High Q and Low ESR at High Frequency I INNOVAT AND TEC O L OGY VJ.W1BC High Q Dielectric N HN Multilayer Ceramic Chip Capacitors O 19 62-2012 Surface-Mount MLCC Capacitors for High Q Commodity Applications
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2011/65/EU
VMN-PT0098-1203
NF822
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PDF
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cdma Booster schematic
Abstract: SSOP-28 AWT1921 AWT1921S11 R4-2200
Text: AWT1921 Integrated High Power Amp 1610 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES High Output Intercept Point High Linearity True Surface Mount Package Internal Bias Circuit Requiring Nominal Input Voltages + 10% Low Cost Off Chip Output Matching Circuit Allows
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AWT1921
AWT1921
SSOP-28
cdma Booster schematic
SSOP-28
AWT1921S11
R4-2200
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PDF
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Untitled
Abstract: No abstract text available
Text: V ishay I n tertech n o l o g y, I n c . I INNOVAT AND TEC O L OGY 146 RTI N HN VISHAY BCcomponents O 19 62-2012 Capacitors - Radial Aluminum High Reliability 146 RTI Radial Aluminum Capacitors for Advanced Applications Key Benefits • • • • • •
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AEC-Q200
MBC242
VMN-PT0132-1204
SET10
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STR W 5456 C
Abstract: STR W 5456 A analog to digital converter datasheets PLCC28 TDA8718 TDA8718K IRT 1250
Text: INTEGRATED CIRCUITS DATA SHEET TDA8718 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter
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TDA8718
TDA8718
SCD31
533061/1500/04/pp16
STR W 5456 C
STR W 5456 A
analog to digital converter datasheets
PLCC28
TDA8718K
IRT 1250
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PDF
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C1005C0G1H200J
Abstract: TDK C3216 C0G C1005
Text: 4112_C1005 1/6 Ceramic Capacitors C Series For General Use SMD FEATURES • High capacitance has been achieved through precision technol- • • • • • ogies that enable the use of multiple thinner ceramic dielectric layers. A monolithic structure ensures superior mechanical strength and
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C1005
characterist05M
C3216Y5V1C475Z
C3216Y5V1A106Z
C3216Y5V1A226Z
C3216X7R1C155K
C3216X7R1C155M
C3216X7R1C225K
C3216X7R1C225M
C1005
C1005C0G1H200J
TDK C3216 C0G
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STR 6656
Abstract: so24L str 6853 MSA686 IEC134 MSA685 TDF8704 TDF8704T linear CCD STR w 6656
Text: INTEGRATED CIRCUITS DATA SHEET TDF8704 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter
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TDF8704
SCD31
533061/1500/03/pp20
STR 6656
so24L
str 6853
MSA686
IEC134
MSA685
TDF8704
TDF8704T
linear CCD
STR w 6656
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PDF
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TDA8705A
Abstract: TDA8705AT
Text: INTEGRATED CIRCUITS DATA SHEET TDA8705A 6-bit high-speed dual Analog-to-Digital Converter ADC Product specification Supersedes data of November 1994 File under Integrated Circuits, IC02 1996 Jan 12 Philips Semiconductors Product specification 6-bit high-speed dual Analog-to-Digital
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TDA8705A
SCDS47
537021/1100/02/pp16
TDA8705A
TDA8705AT
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PDF
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Intech 110
Abstract: 143E intech 13 bit analog to digital converter Intech Advanced Analog differential amplifier ADC5200 adc5600
Text: INTECH IN C / ADVANCED 43E D 4024=147 0 0 G l b û 2 7 • Advanced Analog ADVA T-51-IÔ -12 a division of Intech DESCRIPTION ADC5200/5600 SERIES The ADC5200/5600 Series devices are successive approximation 12-bit A /D converters with 13/xsec or 50/isec conversion time. These devices are
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00GlbÃ
ADC5200/5600
12-bit
13/xsec
50/xsec
7///////777T"
MIL-STD-1772
Intech 110
143E
intech 13 bit analog to digital converter
Intech Advanced Analog differential amplifier
ADC5200
adc5600
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PDF
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IP40G
Abstract: P30R124
Text: I PIOto P40 Series Multilayer Ceramic Capacitors M allorY Axial Leaded Conformally Coated GENERAL SPECIFICATIONS Encapsulation consists of a moisture and shock resistant coating that meets UL94V-0 Voltage Range: 50, 100VDC Over 135 CV values available Capacitance Range:
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UL94V-0
100VDC
PI0U224
P20U224
P30U224
2U274
P20U274
P30U274
PI2U334
P20U334
IP40G
P30R124
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Untitled
Abstract: No abstract text available
Text: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S
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SUP/SUB75N03-07
O-220AB
O-263
SUP75N03-07
SUB75N03-07
S-57585--
15-Jun-98
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PDF
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Intersil BIPOLAR PROM PROGRAMMING SPECIFICATION
Abstract: Bipolar PROM programming BIPOLAR PROM PROGRAMMING SPECIFICATION IM5600CPE IM5600 PACKAGE IM5610CPE DM5600 IM5600CJE IM5610 intersil detailed bipolar prom programming
Text: IM 5 60 0/IM 5 61 0 2 5 6 B it B ipolar Read O nly Memory DMÜ^DIL FEATURES G EN ER A L D E S C R IP T IO N • Uses Patented A IM Programming Elem ent for — Superior Reliability — High Programming Yield — Fast Programming Speed < 1 sec — T T L Processing Com patibility
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IM5600/IM5610
IM5600
IM5610
Intersil BIPOLAR PROM PROGRAMMING SPECIFICATION
Bipolar PROM programming
BIPOLAR PROM PROGRAMMING SPECIFICATION
IM5600CPE
IM5600 PACKAGE
IM5610CPE
DM5600
IM5600CJE
IM5610
intersil detailed bipolar prom programming
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capacitor 104m z5u 50
Abstract: 104m Z5U 50 TDK CC0805HNP CC0603H CC0805HX7R104K CC0805HX7R103K Z5U 104M C3216COG1H CC1206HNP0392J CC0603HX7R103K
Text: CAPACITORS Ceramic Chip Electrical Specification Capacitance Range Temperature Characteristic 10pF to 10.0p,F NPO: 0±30ppm /°C -55°C to + 125°C 1Vrms, 1kHz 25°C X7R: NPO 1,000pF and less: 1MHz X5R: ±15% (-55°C to +85°C) Y5V: +22-82% (-30°C to +85°C)
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000pF
30ppm
C3216Y5V1H474Z
C3216Y5V1H105Z
1206EZ5U
CC1206EZ5U224M
C3216Z5U1E104M
C3216Z5U1E224M
CC1210CY5V106Z
C3225Y5V1C
capacitor 104m z5u 50
104m Z5U 50
TDK CC0805HNP
CC0603H
CC0805HX7R104K
CC0805HX7R103K
Z5U 104M
C3216COG1H
CC1206HNP0392J
CC0603HX7R103K
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electrolytic ELITE
Abstract: electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4
Text: O No. I O O / \ ' 7 I K 1 Products G uide 7 ,r ; P age 1. C ap acitor S eries Table - 2 2. Precautions in Using Alum inum Electrolytic C apacitors - 4 3. Part N um bering System
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sh163b
electrolytic ELITE
electrolytic ELITE ed
elite series pz
ELITE EB series
50A5
3300 XL
3300 uF 450V
1360 uF 450V
22 J.63 capacitor
JIS-C-5101-4
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Untitled
Abstract: No abstract text available
Text: Type 30LR +105C Low ESR Miniature Axial Lead, Aluminum Capacitors Features — • +105°C Long Life • Low ESR Per CV • Case Sizes to 18mm Diameters • Performance Meeting or Exceeding Radial Leaded Devices. General Specifications — Operating Temperature:
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200VDC.
initia0LR276M200EH2A
30LR336M200FH2A
30LR686M200GH2A
30LR826M200LS2A
30LR688M6R3LS2
30LR687M063LS2
30LR278M6R3GF2
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tda 3300
Abstract: No abstract text available
Text: F= 7 * J £ S G S -T H O M S O N R UKgTTM Ogi TDA7220 VERY LOW VOLTAGE AM-FM RADIO • ■ ■ ■ ■ ■ ■ OPERATING SUPPLY VOLTAGE: 1.5 T 06V HIGH SENSITIVITY AND LOW NOISE LOW BATTERY DRAIN VERY LOW TWEET HIGH SIGNAL HANDLING VERY SIMPLE DC SWITCHING OF AM-FM
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TDA7220
30MHz
DIP16
16-lead
0074flfl^
tda 3300
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PDF
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Untitled
Abstract: No abstract text available
Text: •I 1017247 0020137 H7fl TO SH IB A SEMICONDUCTOR TOSHIBA LED LAMP T L Y H 1 9 0 P InGaAlP YELLOW LIGHT EMISSION TECHNICAL DATA O P A N E L CIRCUIT INDICATOR UNIT : mm 10mm DIAMETER • InGaAlP Yellow LED • All Plastic Mold Type. • Colorless Clear Lens
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TLYH190P
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PDF
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Untitled
Abstract: No abstract text available
Text: Capacitance Conversion NanoFarad nF 1R5 Pico Farad (pF) 1.5 0.0015 391 PicoFarad (pF) 390 2R2 2.2 0.0022 401 EIA Code MioroFarad (HF) NanoFarad (nF) MicroFarad 400 0.39 0.4 471 470 511 510 EIA Code NanoFarad (nF) 273 PicoFarad (pF) 27000 27 0.027 333 33000
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THYRISTOR GTO
Abstract: rkm THYRISTOR GTO rkm v SDG250 SDG250HB SDG250HD SDG250HF SDG250HH SDG250HK 600a thyristor gate turn off
Text: SDG250 77mm SYM GTO 4500V / 2500A SPCO Type SDG250 reverse blocking gate turn-off thyristor, GTO, is manufactured by the proven multi-dif fusion process and incorporates a unique emitter design patent issued which offers distinct advantages for improving the gate turn-off conditions.
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SDG250
500V/2500A
SDG250
6RT411
SDG250HK
SDG250HH
4400rn-off
00A/us,
THYRISTOR GTO
rkm THYRISTOR GTO
rkm v
SDG250HB
SDG250HD
SDG250HF
600a thyristor gate turn off
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2200 microfarad electrolytic capacitor
Abstract: capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor
Text: General Data For Capacitors EIA CAPACITANCE CODE VS MICRO-PICO-NANO-FARAD <MF PF) (NF) EIA CODE MICRO-FARAD PICO-FARAD NANO-FARAD 1R5 1.5 .0015 2R2 2.2 .0022 3R3 3.3 .0033 4R7 4.7 .0047 6R8 6.8 .0068 100 10 .01 150 15 .015 220 22 .022 250 25 .025 330 33
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220nF
1000pF
10jiF
2200 microfarad electrolytic capacitor
capacitor 220 microfarad
capacitor 470 microfarad
100 microfarad electrolytic capacitor
2700 microfarad capacitor
capacitor, .001 microfarad
0.1 microfarad electrolytic capacitor
3.3 microfarad electrolytic capacitor
6800 microfarad capacitor
22000 microfarad capacitor
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2700 microfarad capacitor
Abstract: capacitor 220 microfarad capacitor 10 microfarad 4700 microfarad 25 V 1000 microfarad 35 v capacitor 470 microfarad 15000 microfarad capacitor 101 Ceramic Disc Capacitors 6800 microfarad capacitor picofarad .LY
Text: General Data For Capacitors EIA CAPACITAN CE C O D E V S M ICRO-PICO-NANO-FARAD NF (MF) (PF) EIA C O D E MICRO-FARAD PICO-FARAD NANO-FARAD 1.5 .0015 1R5 2R2 2.2 .0022 3R3 3.3 .0033 4.7 .0047 4R7 6R8 6.8 .0068 10 .01 100 150 15 .015 .022 22 220 250 25 .025
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10OOpF
1000nF
000nF
000uF
2700 microfarad capacitor
capacitor 220 microfarad
capacitor 10 microfarad
4700 microfarad 25 V
1000 microfarad 35 v
capacitor 470 microfarad
15000 microfarad capacitor
101 Ceramic Disc Capacitors
6800 microfarad capacitor
picofarad .LY
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PDF
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2U 73 diode
Abstract: siliconix
Text: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET
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6415DQ
S-49519--
18-Dec-96
2U 73 diode
siliconix
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PDF
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