5600 OG Search Results

Intech 110

Abstract: 143E intech 13 bit analog to digital converter Intech Advanced Analog differential amplifier ADC5200 adc5600
Contextual Info: INTECH IN C / ADVANCED 43E D 4024=147 0 0 G l b û 2 7 • Advanced Analog ADVA T-51-IÔ -12 a division of Intech DESCRIPTION ADC5200/5600 SERIES The ADC5200/5600 Series devices are successive approximation 12-bit A /D converters with 13/xsec or 50/isec conversion time. These devices are

130300

Abstract: 15000F
Contextual Info: V i sh ay I n tertech n o l o g y, I n c . Capacitors - Aluminum Electrolytic in Insulated Case I INNOVAT AND TEC O L OGY 500 PGP-ST Series N HN VISHAY BCcomponents O 19 62-2012 500 PGP-ST Series General-Purpose Power Aluminum Capacitors with Screw Terminals

Contextual Info: V ishay I ntertechnology, I nc . I INNOVAT AND TEC O L OGY MONO-K AP N HN Ceramic Capacitors O 19 62-2012 Capacitors - High Capacitance in Small Size K10 Series Multilayer Ceramic Dipped Radial Capacitors Key Benefits • High capacitance in small size • Cost effective solution

IP40G

Abstract: P30R124
Contextual Info: I PIOto P40 Series Multilayer Ceramic Capacitors M allorY Axial Leaded Conformally Coated GENERAL SPECIFICATIONS Encapsulation consists of a moisture and shock resistant coating that meets UL94V-0 Voltage Range: 50, 100VDC Over 135 CV values available Capacitance Range:

Contextual Info: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S

Intersil BIPOLAR PROM PROGRAMMING SPECIFICATION

Abstract: Bipolar PROM programming BIPOLAR PROM PROGRAMMING SPECIFICATION IM5600CPE IM5600 PACKAGE IM5610CPE DM5600 IM5600CJE IM5610 intersil detailed bipolar prom programming
Contextual Info: IM 5 60 0/IM 5 61 0 2 5 6 B it B ipolar Read O nly Memory DMÜ^DIL FEATURES G EN ER A L D E S C R IP T IO N • Uses Patented A IM Programming Elem ent for — Superior Reliability — High Programming Yield — Fast Programming Speed < 1 sec — T T L Processing Com patibility

AN6320N

Abstract: 12v amp diagram
Contextual Info: AN6320N AN6320N V T R ^ * y Y 7 > '7 PH ]S& /V T R Head Amplifier C ircuit • « m U n it ! mm AN6320N l i , V T R c o - / f t ü f ê T 't o 3 > 1 4 i < E ■ w X >13 2 < E a o 3 < I B *iti«-fiîïi«lpl0S& S 5 < r 7 ^ ~ e < r 3 > 12 • AN6320N I t , 3 > n

capacitor 104m z5u 50

Abstract: 104m Z5U 50 TDK CC0805HNP CC0603H CC0805HX7R104K CC0805HX7R103K Z5U 104M C3216COG1H CC1206HNP0392J CC0603HX7R103K
Contextual Info: CAPACITORS Ceramic Chip Electrical Specification Capacitance Range Temperature Characteristic 10pF to 10.0p,F NPO: 0±30ppm /°C -55°C to + 125°C 1Vrms, 1kHz 25°C X7R: NPO 1,000pF and less: 1MHz X5R: ±15% (-55°C to +85°C) Y5V: +22-82% (-30°C to +85°C)

UPS circuit diagram pcb

Contextual Info: V is h ay I n t e rt e c h n o l o g y, I n c . I INNOVAT AND TEC O L OGY Power Application Capabilities N HN aluminum electrolytic capacitors O 19 62-2012 Capacitors - Aluminum Electrolytic Aluminum Electrolytic Capacitors in Power Applications Power Applications

NF822

Contextual Info: V ishay I n tertech n o l o g y, I n c . Capacitors - High Q and Low ESR at High Frequency I INNOVAT AND TEC O L OGY VJ.W1BC High Q Dielectric N HN Multilayer Ceramic Chip Capacitors O 19 62-2012 Surface-Mount MLCC Capacitors for High Q Commodity Applications

electrolytic ELITE

Abstract: electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4
Contextual Info: O No. I O O / \ ' 7 I K 1 Products G uide 7 ,r ; P age 1. C ap acitor S eries Table - 2 2. Precautions in Using Alum inum Electrolytic C apacitors - 4 3. Part N um bering System

cdma Booster schematic

Abstract: SSOP-28 AWT1921 AWT1921S11 R4-2200
Contextual Info: AWT1921 Integrated High Power Amp 1610 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • High Output Intercept Point High Linearity True Surface Mount Package Internal Bias Circuit Requiring Nominal Input Voltages + 10% Low Cost Off Chip Output Matching Circuit Allows

Contextual Info: Type 30LR +105C Low ESR Miniature Axial Lead, Aluminum Capacitors Features — • +105°C Long Life • Low ESR Per CV • Case Sizes to 18mm Diameters • Performance Meeting or Exceeding Radial Leaded Devices. General Specifications — Operating Temperature:

tda 3300

Contextual Info: F= 7 * J £ S G S -T H O M S O N R UKgTTM Ogi TDA7220 VERY LOW VOLTAGE AM-FM RADIO • ■ ■ ■ ■ ■ ■ OPERATING SUPPLY VOLTAGE: 1.5 T 06V HIGH SENSITIVITY AND LOW NOISE LOW BATTERY DRAIN VERY LOW TWEET HIGH SIGNAL HANDLING VERY SIMPLE DC SWITCHING OF AM-FM

Contextual Info: •I 1017247 0020137 H7fl TO SH IB A SEMICONDUCTOR TOSHIBA LED LAMP T L Y H 1 9 0 P InGaAlP YELLOW LIGHT EMISSION TECHNICAL DATA O P A N E L CIRCUIT INDICATOR UNIT : mm 10mm DIAMETER • InGaAlP Yellow LED • All Plastic Mold Type. • Colorless Clear Lens

STR W 5456 C

Abstract: STR W 5456 A analog to digital converter datasheets PLCC28 TDA8718 TDA8718K IRT 1250
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8718 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter

Contextual Info: Capacitance Conversion NanoFarad nF 1R5 Pico Farad (pF) 1.5 0.0015 391 PicoFarad (pF) 390 2R2 2.2 0.0022 401 EIA Code MioroFarad (HF) NanoFarad (nF) MicroFarad 400 0.39 0.4 471 470 511 510 EIA Code NanoFarad (nF) 273 PicoFarad (pF) 27000 27 0.027 333 33000

C1005C0G1H200J

Abstract: TDK C3216 C0G C1005
Contextual Info: 4112_C1005 1/6 Ceramic Capacitors C Series For General Use SMD FEATURES • High capacitance has been achieved through precision technol- • • • • • ogies that enable the use of multiple thinner ceramic dielectric layers. A monolithic structure ensures superior mechanical strength and

THYRISTOR GTO

Abstract: rkm THYRISTOR GTO rkm v SDG250 SDG250HB SDG250HD SDG250HF SDG250HH SDG250HK 600a thyristor gate turn off
Contextual Info: SDG250 77mm SYM GTO 4500V / 2500A SPCO Type SDG250 reverse blocking gate turn-off thyristor, GTO, is manufactured by the proven multi-dif­ fusion process and incorporates a unique emitter design patent issued which offers distinct advantages for improving the gate turn-off conditions.

2200 microfarad electrolytic capacitor

Abstract: capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor
Contextual Info: General Data For Capacitors EIA CAPACITANCE CODE VS MICRO-PICO-NANO-FARAD <MF PF) (NF) EIA CODE MICRO-FARAD PICO-FARAD NANO-FARAD 1R5 1.5 .0015 2R2 2.2 .0022 3R3 3.3 .0033 4R7 4.7 .0047 6R8 6.8 .0068 100 10 .01 150 15 .015 220 22 .022 250 25 .025 330 33

2700 microfarad capacitor

Abstract: capacitor 220 microfarad capacitor 10 microfarad 4700 microfarad 25 V 1000 microfarad 35 v capacitor 470 microfarad 15000 microfarad capacitor 101 Ceramic Disc Capacitors 6800 microfarad capacitor picofarad .LY
Contextual Info: General Data For Capacitors EIA CAPACITAN CE C O D E V S M ICRO-PICO-NANO-FARAD NF (MF) (PF) EIA C O D E MICRO-FARAD PICO-FARAD NANO-FARAD 1.5 .0015 1R5 2R2 2.2 .0022 3R3 3.3 .0033 4.7 .0047 4R7 6R8 6.8 .0068 10 .01 100 150 15 .015 .022 22 220 250 25 .025

2U 73 diode

Abstract: siliconix
Contextual Info: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET

STR 6656

Abstract: so24L str 6853 MSA686 IEC134 MSA685 TDF8704 TDF8704T linear CCD STR w 6656
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDF8704 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter

TDA8705A

Abstract: TDA8705AT
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8705A 6-bit high-speed dual Analog-to-Digital Converter ADC Product specification Supersedes data of November 1994 File under Integrated Circuits, IC02 1996 Jan 12 Philips Semiconductors Product specification 6-bit high-speed dual Analog-to-Digital