Untitled
Abstract: No abstract text available
Text: User's Guide SLVU464 – July 2011 UCD90SEQ48EVM-560: 48-Pin Sequencer Development Board This user's guide describes the 48-pin Sequencer Development Board – UCD90SEQ48EVM-560. This development board contains a 48-pin socket and interface circuitry to support the UCD9090.
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SLVU464
UCD90SEQ48EVM-560:
48-Pin
UCD90SEQ48EVM-560.
UCD9090.
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT560 ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages E C PARTMARKING DETAIL – 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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FMMT560
100ms
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pnp 500v
Abstract: FMMT560 DSA003698
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT560 ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages E C PARTMARKING DETAIL – 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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FMMT560
100ms
pnp 500v
FMMT560
DSA003698
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switch SOT-23-6
Abstract: No abstract text available
Text: NJM41030 3dB Video Amplifier • GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. ■ FEATURES ● Operating Voltage ● Operating temperature range ● 3.1dB Amplifier, 560Ω Driver ● Frequency Characteristics ● Power Save Circuit
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NJM41030
NJM41030
10MHz
NJM41030F1
OT-23-6
switch SOT-23-6
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Untitled
Abstract: No abstract text available
Text: NJM41030 3dB Video Amplifier p GENERAL DESCRIPTION The NJM41030 is a small package 3dB video amplifier. p FEATURES n Operating Voltage n Operating temperature range n 3.1dB Amplifier, 560Ω Driver n Frequency Characteristics n Power Save Circuit n Bipolar Technology
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NJM41030
NJM41030
NJM41030F1
10MHz
OT-23-6
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c5607
Abstract: TLV3702 TLV3701 TLV3701CD TLV3704 TLV370X
Text: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137A – NOVEMBER 2000 – REVISED JANUARY 2001 D D SUPPLY CURRENT vs SUPPLY VOLTAGE 800 description The TLV370x is Texas Instruments’ first family of nanopower comparators with only 560 nA per
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TLV3701,
TLV3702,
TLV3704
SLCS137A
TLV370x
c5607
TLV3702
TLV3701
TLV3701CD
TLV3704
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Untitled
Abstract: No abstract text available
Text: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137 – NOVEMBER 2000 D D D D D D Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . –0.1 V to VCC + 5 V Supply Voltage Range . . . 2.5 V to 16 V
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TLV3701,
TLV3702,
TLV3704
SLCS137
OT-23
TLV3701)
TLV3702)
SLOU060
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PDF
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vbci
Abstract: TLV3702 TLV3701 TLV3701CD TLV3704 TLV370X 53VCC
Text: TLV3701, TLV3702, TLV3704 FAMILY OF NANOPOWER PUSH-PULL OUTPUT COMPARATORS SLCS137A – NOVEMBER 2000 – REVISED JANUARY 2001 D D D D D D Low Supply Current . . . 560 nA/Per Channel Input Common-Mode Range Exceeds the Rails . . . –0.1 V to VCC + 5 V Supply Voltage Range . . . 2.5 V to 16 V
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TLV3701,
TLV3702,
TLV3704
SLCS137A
OT-23
TLV3701)
TLV3702)
SLOU060
TLV370x
vbci
TLV3702
TLV3701
TLV3701CD
TLV3704
53VCC
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Q62901-B65
Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology
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HOP2000)
Q62902-B154-F222
Q62902-B141-F222
GEXY6720
Q62901-B65
Q62902-B156-F222
Q62902-B152-F222
A671 transistor
Datasheet diode BZW 70-20
LW T67C-S2U1-35
Q62703-Q6351
LM776
din standard 5480
Q62703-P4699
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FMMT560T
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > -500V IC = -150mA high Continuous Collector Current Excellent hFE Characteristics up to IC = 100mA
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FMMT560
-500V
-150mA
100mA
AEC-Q101
J-STD-020
MIL-STD-202,
DS33102
FMMT560T
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to 500mA Peak Pulse Current Excellent hFE Characteristics up to IC = 100mA
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FMMT560
-500V
-150mA
500mA
100mA
AEC-Q101
J-STD-020
DS33102
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PDF
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sot23 marking tr1
Abstract: MARKING SOT23 tr2 E50U PNP POWER TRANSISTOR SOT23-6L transistor TR1 sot23
Text: IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts POWER SOT23-6L 300mW Unit：inch mm FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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150mA
2002/95/EC
IEC61249
300mW
OT23-6L
OT23-6L
MIL-STD-750
sot23 marking tr1
MARKING SOT23 tr2
E50U
PNP POWER TRANSISTOR SOT23-6L
transistor TR1 sot23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKQLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel
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L2SA1037AKQLT1G
L2SA1037AKQLT1G
3000/Tape
L2SA1037AKQLT3G
10000/Tape
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel
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L2SA1037AKQLT1G
L2SA1037AKQLT1G
3000/Tape
L2SA1037AKQLT3G
10000/Tape
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel
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L2SA1037AKXLT1G
3000/Tape
10000/Tape
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel
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L2SA1037AKQLT1G
L2SA1037AKQLT1G
3000/Tape
L2SA1037AKQLT3G
10000/Tape
OT-23
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BC547 smd
Abstract: bc556 SMD BC547 smd package BC557 smd sot23 bc547 smd transistor bc557 SMD philips datasheet SMD BC547 bc337 SMD PACKAGE jc33725 bc557 SMD philips
Text: Semiconductors Date of release: February 2005 General purpose transistors portfolio Single transistors Polarity IC mA VCEO (V) 25 30 40 100 NPN 150 45 100 PNP 150 500 SOT23 SOT346 (SC-59) SOT323 (SC-70) SOT416 (SC-75) SOT883 (SC-101) SOT54 (TO-92) Ptot max.
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OT346
SC-59)
OT323
SC-70)
OT416
SC-75)
OT883
SC-101)
PMST5089
BC848B
BC547 smd
bc556 SMD
BC547 smd package
BC557 smd sot23
bc547 smd transistor
bc557 SMD philips datasheet
SMD BC547
bc337 SMD PACKAGE
jc33725
bc557 SMD philips
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z Pb-Free Package is Available. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel L2SA1037AKXLT1G SOT23 10000/Tape & Reel 2 SOT– 23
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L2SA1037AKXLT1G
3000/Tape
10000/Tape
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 o m FEATURES * E xce lle n t h FE c h a ra cte risristics up to lc = 50m A * L o w S a tu ra tio n v o lta g e s PARTM ARKING D E T A IL - 560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE
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OCR Scan
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-50mA,
-100mA,
-10mA,
50MHz
-100V,
FMMT560
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 - NOVEMBER 1998 o m FEATURES * E xce lle n t hFE c h a ra cte risristics up to lc= 5 0m A * L o w S a tu ra tio n v o lta g e s PARTM ARKING D E T A IL - 560 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL
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OCR Scan
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-100jj
-10mA*
-500V;
-500V
-20mA,
-50mA,
-10mA
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PDF
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BAT54A
Abstract: BAT54C BAT54S 12p sot-23 MV MARKING SOT23 ,MARKING 12p SOT-23 LF MARKING CODE MARKING 12p SOT-23
Text: 7 1 1 0 0 2 b G ü b ö 3 0 ö 560 • P H I N BAT54A; C; S SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky Barrier double diodes with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting. The diodes feature an especially low forward voltage.
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OCR Scan
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711002b
BAT54A;
OT-23
OT-23.
BAT54A
BAT54C
BAT54S
12p sot-23
MV MARKING SOT23
,MARKING 12p SOT-23
LF MARKING CODE
MARKING 12p SOT-23
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BB109G
Abstract: BB105B BB109 BB105G BB112 BBY40 T092
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics B apM Kanbi Kofl: Ddm» [n ] Cdm» [n®] V r » [B] If [mA] BB105G BB109G BBY40 BB105B 1,8 4,3 6,0 2,0 18 32 30 18 30 30 30 35 0,2 0,2 0,02 0,2 BB112 17,0 560 12 0,05 Kopnyc
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OCR Scan
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BB105G
BB109G
BBY40
BB105B
BB112
BB109
T092
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PDF
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S75 J175
Abstract: No abstract text available
Text: FM M J174 to FMMJ177 SOT23 P-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J174 FM M J175 FMMJ1 76 FM M J177 - S74 S75 S76 S77 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or Gate-Source Voltage 30V Continous Forward Gate Current
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OCR Scan
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FMMJ177
225mW
S75 J175
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PDF
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FMMJ174
Abstract: MJ176
Text: FMM J174 to FMMJ177 SOT23 P-CHAMNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM MJ174 FM MJ175 FM MJ176 FM MJ177 - S74 S75 S76 S77 ABSOLUTE MAXIMUM RATINGS at Tamb = 25°C Gate Drain or Gate-Source Voltage 30 V Continous Forward Gate Current
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OCR Scan
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MJ174
MJ175
MJ176
MJ177
FMMJ177
DS167
FMMJ174
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PDF
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