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IXYS Corporation IXYH55N120A4 IGBT GENX4 1200V 55A TO247
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DigiKey	IXYH55N120A4	Tube	600		1	1 $11.18 10 $11.18 100 $7.11167 1000 $11.18 10000 $11.18	Buy Now
Mouser Electronics	IXYH55N120A4		1,593			1 $10.87 10 $9 100 $6.45 1000 $6.36 10000 $6.36	Buy Now
Newark	IXYH55N120A4	Bulk			300	1 - 10 - 100 - 1000 $6.68 10000 $6.68	Buy Now
TTI	IXYH55N120A4	Tube			300	1 - 10 - 100 - 1000 $6.49 10000 $6.49	Buy Now
IXYS Corporation IXYT55N120A4HV IGBT PT 1200V 175A TO268HV
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DigiKey	IXYT55N120A4HV	Tube	228		1	1 $13.81 10 $13.81 100 $8.921 1000 $13.81 10000 $13.81	Buy Now
Mouser Electronics	IXYT55N120A4HV		405			1 $13.81 10 $13.81 100 $8.91 1000 $8.29 10000 $8.29	Buy Now
Newark	IXYT55N120A4HV	Bulk			300	1 - 10 - 100 - 1000 $8.7 10000 $8.7	Buy Now
TTI	IXYT55N120A4HV	Tube			300	1 - 10 - 100 - 1000 $8.3 10000 $8.3	Buy Now
IXYS Corporation IXSN55N120A IGBT MOD 1200V 110A 500W SOT227B
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DigiKey	IXSN55N120A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSN55N120AU1 IGBT MOD 1200V 110A 500W SOT227B
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DigiKey	IXSN55N120AU1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGK55N120A3H1 IGBT 1200V 125A 460W TO264
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DigiKey	IXGK55N120A3H1	Tube			300	1 - 10 - 100 - 1000 $19.518 10000 $19.518	Buy Now
Mouser Electronics	IXGK55N120A3H1					1 - 10 - 100 - 1000 $23.3 10000 $23.3	Get Quote
TTI	IXGK55N120A3H1	Tube			300	1 - 10 - 100 - 1000 $26.02 10000 $26.02	Buy Now
TME	IXGK55N120A3H1				1	1 $26.37 10 $21.02 100 $18.81 1000 $18.81 10000 $18.81	Get Quote

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55N120A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20	Original	PDF	55N120A OT-227
IXSN55N120A Abstract: on 3150 Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous	Original	PDF	55N120A OT-227 IXSN55N120A on 3150
IXDN55N120AU1 Abstract: MJ 1241 Text: High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability C VCES = 1200 V IC25 = 85 A VCE sat typ = 2.5 V G Preliminary Data E E Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	PDF	55N120AU1 OT-227 E153432 IXDN55N120AU1 MJ 1241
Untitled Abstract: No abstract text available Text: 1IXSN 55N120AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability G E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM E Maximum Ratings 1200 1200 V A Continuous Transient ±20 ±30 V V IC25 IC90	Original	PDF	55N120AU1
Untitled Abstract: No abstract text available Text: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200	Original	PDF	55N120AU1 OT-227
fast diode SOT-227 Abstract: No abstract text available Text: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200	Original	PDF	55N120AU1 fast diode SOT-227
55N120AU1 Abstract: No abstract text available Text: High Voltage IGBT with Diode IXSN 55N120AU1 VCES IC25 VCE sat = 1200 V = 110 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM	Original	PDF	55N120AU1 55N120AU1
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous	Original	PDF	55N120A OT-227
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
b1113 Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14 Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2	Original	PDF	PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	PDF	O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
B1109 Abstract: b1105 B1115 80n60a 80N60B IXSN80N60A B1-76 15N120B B180 Text: SCSOA IGBT S-Series Contents IGBT High Speed Low VCE sat VCES max IC VCE(sat) max PLUS247 TO-204 (IXSX) (IXSM) TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page TC = 25 °C TC = 25 °C V A V 600 48 2.2 IXSH 24N60 1000 75 2.7 IXSH 45N100 1200	Original	PDF	PLUS247 O-204 O-247 O-264 O-268 80N60B 35N100A 15N120B 25N120A B1109 b1105 B1115 80n60a IXSN80N60A B1-76 B180
92520E Abstract: No abstract text available Text: DIXYS IXSN 55N120AU1 High Voltage IGBT with Diode V CES IC25 vCE sat 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions VCES v CGB Tj = 25°Cto150°C Tj = 25° C to 150° C; v GES Continuous Transient v GEM IC25 'c 9 0 ' cm SSOA (RBSOA) Maximum Ratings	OCR Scan	PDF	55N120AU1 Cto150 OT-227 E153432 92520E
0504N Abstract: No abstract text available Text: □ IXYS High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability V CES 1200 V ^C25 85 A V C E sat typ 2.5 V Preliminary Data Maximum Ratings Symbol Test Conditions v CES VCGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	55N120AU1 OT-227 0504N

B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	PDF	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
BTS 3900 a Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device	OCR Scan	PDF	T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	PDF	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	PDF	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
b14 smd diode Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60 Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60	OCR Scan	PDF	T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60

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55N120A Datasheets Context Search

Untitled

IXSN55N120A

IXDN55N120AU1

Untitled

Untitled

fast diode SOT-227

55N120AU1

Untitled

7n60b

b1113

40n60 igbt

B1109

92520E

0504N

B1116

40n80

BTS 3900 a

8n80

40N60A

DSE 130 -06A

b14 smd diode