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    55N120 Search Results

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    55N120 Price and Stock

    IXYS Corporation IXYH55N120A4

    IGBT GENX4 1200V 55A TO247
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    DigiKey IXYH55N120A4 Tube 600 1
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    Mouser Electronics IXYH55N120A4 1,593
    • 1 $10.87
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    IXYS Corporation IXYT55N120A4HV

    IGBT PT 1200V 175A TO268HV
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    DigiKey IXYT55N120A4HV Tube 228 1
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    Mouser Electronics IXYT55N120A4HV 405
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    Newark IXYT55N120A4HV Bulk 300
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    TTI IXYT55N120A4HV Tube 300
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    IXYS Corporation IXYH55N120C4

    IGBT 1200V 140A TO247
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    DigiKey IXYH55N120C4 Tube 210 1
    • 1 $9.14
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    Mouser Electronics IXYH55N120C4 1,030
    • 1 $9.33
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    TTI IXYH55N120C4 Tube 300
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    IXYS Corporation IXFN55N120SK

    SIC AND MULTICHIP DISCRETE
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    DigiKey IXFN55N120SK Tube 182 1
    • 1 $62.88
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    Hammond Manufacturing 1455N1201BU

    BOX ALUM BLUE 4.72"L X 4.06"W
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    DigiKey 1455N1201BU Bag 55 1
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    Mouser Electronics 1455N1201BU 36
    • 1 $28.8
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    Newark 1455N1201BU Bulk 161 1
    • 1 $29
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    RS 1455N1201BU Bulk 1
    • 1 $30.14
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    • 100 $23.21
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    TME 1455N1201BU 1
    • 1 $28.96
    • 10 $24.14
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    Powell Electronics 1455N1201BU 152 1
    • 1 $25.46
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    Master Electronics 1455N1201BU 3
    • 1 $27.34
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    55N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55N120D1

    Abstract: No abstract text available
    Text: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G E G E E IXDN 55N120 Preliminary Data E IXDN 55N120 D1 miniBLOC, SOT-227 B E153432 E Symbol Conditions


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    PDF 55N120 55N120 OT-227 E153432 IXDN55N120 D-68623 55N120D1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20


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    PDF 55N120A OT-227

    IXSN55N120A

    Abstract: on 3150
    Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous


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    PDF 55N120A OT-227 IXSN55N120A on 3150

    Untitled

    Abstract: No abstract text available
    Text: IXDN 55N120 D1 VCES = 1200 V = 100 A IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR


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    PDF 55N120 OT-227 E153432 IXDN55N120

    IXDN55N120AU1

    Abstract: MJ 1241
    Text: High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability C VCES = 1200 V IC25 = 85 A VCE sat typ = 2.5 V G Preliminary Data E E Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    PDF 55N120AU1 OT-227 E153432 IXDN55N120AU1 MJ 1241

    Untitled

    Abstract: No abstract text available
    Text: 1IXSN 55N120AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability G E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM E Maximum Ratings 1200 1200 V A Continuous Transient ±20 ±30 V V IC25 IC90


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    PDF 55N120AU1

    Untitled

    Abstract: No abstract text available
    Text: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200


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    PDF 55N120AU1 OT-227

    fast diode SOT-227

    Abstract: No abstract text available
    Text: IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE sat = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200


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    PDF 55N120AU1 fast diode SOT-227

    55N120AU1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode IXSN 55N120AU1 VCES IC25 VCE sat = 1200 V = 110 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM


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    PDF 55N120AU1 55N120AU1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous


    Original
    PDF 55N120A OT-227

    55N120

    Abstract: 55n120d1 ixdn 55 n 120 d1 IXDN55N120D1 IXDN IXDN55N120
    Text: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G miniBLOC, SOT-227 B E153432 E G G E E IXDN 55N120 IXDN 55N120 D1 E C Symbol Conditions VCES TJ = 25°C to 150°C


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    PDF 55N120 55N120 OT-227 E153432 IXDN55N120 55n120d1 ixdn 55 n 120 d1 IXDN55N120D1 IXDN IXDN55N120

    55N120

    Abstract: 200NS40 IXDN55N120 55n120d1
    Text: IXDN 55N120 D1 VCES = 1200 V IC25 = 100 A VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR


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    PDF 55N120 OT-227 E153432 IXDN55N120 200NS40 IXDN55N120 55n120d1

    diode B4

    Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
    Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B


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    PDF O-263 O-247 O-268 STO-227 O-220 20N60 35N60 20N120 20N120 diode B4 ixdn75n120 STO-227 IGBT D-Series IXDH20N120AU1 20N60B 30N120 55N120 30N120D1

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    92520E

    Abstract: No abstract text available
    Text: DIXYS IXSN 55N120AU1 High Voltage IGBT with Diode V CES IC25 vCE sat 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions VCES v CGB Tj = 25°Cto150°C Tj = 25° C to 150° C; v GES Continuous Transient v GEM IC25 'c 9 0 ' cm SSOA (RBSOA) Maximum Ratings


    OCR Scan
    PDF 55N120AU1 Cto150 OT-227 E153432 92520E

    55N120D1

    Abstract: ixdn 30 n 120 d1
    Text: □ IXYS IXDN 55N120 IXDN 55N120 D1 High Voltage IGBT with optional Diode V CES 1200 V 100 A 2.3 V ^C25 V CE sat typ S hort C ircuit SO A Capability Square RBSOA IX D N 5 5 N 1 2 0 Preliminary Data IX D N 5 5 N 1 2 0 D1 miniBLOC, SOT-227 B E153432 E Symbol


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    PDF 55N120 55N120 OT-227 E153432 55N120D1 ixdn 30 n 120 d1

    0504N

    Abstract: No abstract text available
    Text: □ IXYS High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability V CES 1200 V ^C25 85 A V C E sat typ 2.5 V Preliminary Data Maximum Ratings Symbol Test Conditions v CES VCGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M£i


    OCR Scan
    PDF 55N120AU1 OT-227 0504N

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S High Voltage IGBT IXSN 55N120A VCES IC25 vCE sat = 1200 V = 110 A = 4V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj =25°Cto150°C 1200 V VCGR Tj = 25° C to 150° C; RQE= 1 Mi2 1200 A v GES v GEM Continuous ±20 V


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    PDF 55N120A Cto150 OT-227 E153432

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


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    PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


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    PDF 20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


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    PDF T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B