558 TRANSISTOR Search Results

Mn2O3

Abstract: AVX solid tantalum capacitor SMD Transistor 7er tantalum capacitors surge current
Contextual Info: VOLTAGE DERATING RULES FOR SOLID TANTALUM AND NIOBIUM CAPACITORS T. Zednicek AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 email zednicekt@avx.cz J.Gill AVX Limited, Long Road, Paignton

transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC557

Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: What HEW LETT WlEA PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 558 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 558 Series is a two-stage thinfllm bipolar RF amplifier that

BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TRANSISTOR C 557 B

Abstract: bc560 transistor BC 458 Transistor B C 458 BC559 PSpice transistor BC559 transistor bc558 features BC558 PNP transistor download datasheet
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Voltage Derating Rules for Solid Tantalum and Niobium Capacitors

Contextual Info: Voltage Derating Rules for Solid Tantalum and Niobium Capacitors Tomáš Zedníček AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 e-mail: tomas.zednicek@eur.avx.com John Gill AVX Limited, Long Road, Paignton

transistor BC 458

Abstract: BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

of transistor bc558

Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC559CTA

Abstract: bc560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor BC 458

Abstract: BC 458 transistor transistor bc557 TRANSISTOR BC 560 ic 558 BC558 PNP transistor information of BC558 transistor bc 558 pnp BC546 BC556
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 558 Series Features Description Pin Configuration • Frequency Range: 5 to 500␣MHz The 558 Series is a two-stage thinfilm bipolar RF amplifier that operates on 5-volt bias to provide

a696 transistor

Contextual Info: Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 558 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 558 Series is a two-stage thinfilm bipolar RF amplifier that operates on 5-volt bias to provide efficiency, high gain and relatively

pnp transistor 1000v

Abstract: FMMT558 FMMT458 ZTX558 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

2N6988

Abstract: 2N6988 JANTX 2N6987 2N6987U 2N6987 JANTX
Contextual Info: TECHNICAL DATA MULTIPLE QUAD PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N6987U Qualified Level JAN JANTX JANTXV JANS 2N6988 MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (4) Collector-Base Voltage (4) Emitter-Base Voltage (4)

BC547 transistor kec

Abstract: APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V C = 6 5 V . • For Complementary With PNP Type BC556/557/558. eo MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

Contextual Info: TECHNICAL DATA 2N6987 JAN, JTX, JTXV, JANS 2N6987U JAN, JTX, JTXV 2N6988 JAN, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/558 MULTIPLE QUAD PNP SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS (1) Ratings Symbol Collector-Emitter Voltage (4)

transistor c 557

Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

pnp transistor 1000v

Abstract: FMMT558 FMMT458 DSA003671
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6

ic 558

Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
Contextual Info: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

Contextual Info: m bbS3R31 DD27RB1 bTT « A P X JC556 to 558 N AUER PHILIPS/DISCRETE b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA

TRANSISTOR C 557 B

Abstract: transistor c 557 B 557 PNP TRANSISTOR transistor 557 b Transistor Bc556 bc556 transistor transistor c 558 ic 558 of pnp transistor BC557 PNP BC558
Contextual Info: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL Collector-base voltage