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    558 NPN Search Results

    558 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    558 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APPLICATION OF BC548 transistor

    Abstract: PNP transistor bc546 BC548 pnp transistor BC547
    Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. MAXIMUM RATING Ta=25℃ CHARACTERISTIC


    Original     		PDF BC546/7/8 BC546 BC556/557/558. BC547 BC548 APPLICATION OF BC548 transistor PNP transistor bc546 BC548 pnp transistor BC547

    APPLICATION OF BC548 transistor

    Abstract: BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor BC546 for bc548 npn transistor
    Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25ᴱ


    Original     		PDF BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 APPLICATION OF BC548 transistor BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor for bc548 npn transistor

    APPLICATION OF BC548 transistor

    Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor
    Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃


    Original     		PDF BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 100MHz APPLICATION OF BC548 transistor bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR for bc548 npn transistor

    CT1B

    Abstract: keyboard schematic xt Capacitive touch waterproof KEYPAD secme PS2 KEYBOARD schematic secme eao CT016V secme Switch ps2 keyboard circuit secme keyboard
    Text: Switches and Indicators 75 Switches and Indicators Index Series 75 552 01.2000 Keyboards with touch sensitive technology Page 553 The Principle behind the touch sensitive Switches Page 554 CT1V Page 555 CT1B Page 556 CT012V / CT016V Page 557 CT065V Page 558


    Original     		PDF CT012V CT016V CT065V CT102V RS422 RS485 RS232) RS232 CT1B keyboard schematic xt Capacitive touch waterproof KEYPAD secme PS2 KEYBOARD schematic secme eao CT016V secme Switch ps2 keyboard circuit secme keyboard

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-02+JAN Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		PDF M19500/558-02 StyleTO-86

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-01+JANTX Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		PDF M19500/558-01

    tektronix 576 curve tracer

    Abstract: NDS351N high power pulse generator with mosfet PN channel MOSFET 10A tektronix type 576 curve tracer RC snubber circuit
    Text: Application Note 558 Ralph Locher Introduction to Power MOSFETs and their Applications INTRODUCTION The Power MOSFETs that are available today perform the same function as Bipolar transistors except the former are voltage controlled in contrast to the current controlled Bipolar devices. Today


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-02+JANTX Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		PDF M19500/558-02 StyleTO-86

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-01+JAN Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		PDF M19500/558-01

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-02+JANTXV Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		PDF M19500/558-02 StyleTO-86

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-01+JANTXV Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		PDF M19500/558-01

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-02 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF M19500/558-02 StyleTO-86

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-01 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF M19500/558-01

    170N

    Abstract: Sensick WL 12-2
    Text: KD01_W170_de.qxd 24.03.2004 18:24 Uhr Seite 558 Reflexions-Lichtschranke WL 170 für transparente Objekte, Rotlicht – DC Reichweite 0,1 . . . 0,8 m Maßbild 12 28,6 Reflexions-Lichtschranke 2 1 8 16 1 4 10 7,3 Einstell-Möglichkeiten WL 170-P 122 WL 170-P 420


    Original     		PDF 170-P 170-N 170N Sensick WL 12-2

    mje13009 equivalent

    Abstract: MJE13009 MJE130 CP289
    Text: PROCESS CP289 Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip PROCESS DETAILS Die Size 167 x 167 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 59 x 29 MILS Emitter Bonding Pad Area 64 x 28 MILS Top Side Metalization Al - 45,000Å Back Side Metalization


    Original     		PDF CP289 MJE13009 mje13009 equivalent MJE13009 MJE130 CP289

    XR558

    Abstract: XR558CP 558CP XR-558CP xr 558 XR-558 XR-559 XR559CP XR-559CP 559CP
    Text: Z *E X flR XR-558/559 Quad Timing Circuits FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-558 and the XR-559 quad tim ing circuits con­ tain four independent tim er sections on a single m ono­ lithic chip. Each of the tim er sections on the chip are


    OCR Scan     		PDF XR-558 XR-559 ouS232C XR-1488 RS232C XR-1489A XR558 XR558CP 558CP XR-558CP xr 558 XR559CP XR-559CP 559CP

    BC547 transistor kec

    Abstract: APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548
    Text: SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V C = 6 5 V . • For Complementary With PNP Type BC556/557/558. eo MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC547 transistor kec APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548

    bc5476

    Abstract: APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V Ceo=65V. • For Complementary With PNP Type BC556/557/558. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF BC546/7/8 BC546 BC556/557/558. BC547 BC548 bc5476 APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features

    Transistor - BC 547, CL 100

    Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
    Text: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550


    OCR Scan     		PDF bc546 bc549. 546/bc 547/bc 549/bc 548/bc Transistor - BC 547, CL 100 bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B

    BC 546 BP

    Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


    OCR Scan     		PDF CB-76 BC317P. BC 546 BP bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740

    ZTX458

    Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
    Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN


    OCR Scan     		PDF ZTX658 ZTX758 ZTX458 ZTX558 ZTX6575 ZTX757 MPSA425 MPSA92 BF393 BF493 ZTX558 ZTX758 BF493 ZTX4555 BF392 MPSA92 ZTX757

    bc 339

    Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
    Text: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,


    OCR Scan     		PDF fl235b05 BC560 Q62702-C692 Q62702-C692-V1 Q62702-C692-V2 Q62702-C693 Q62702-C693-V1 Q62702-C693-V2 Q62702-C694 Q62702-C694-V1 bc 339 bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B

    C 547 C

    Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
    Text: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W


    OCR Scan     		PDF