555 DATABOOK Search Results

555 databook

Abstract: LMC555CN LMC555H 555 timer 38 khz H08C LMC555 LMC555CH LMC555CM LMC555CMM M08A
Contextual Info: General Description The LMC555 is a CMOS version of the industry standard 555 series general purpose timers. It offers the same capability of generating accurate time delays and frequencies but with much lower power dissipation and supply current spikes. When operated as a one-shot, the time delay is precisely controlled by a single external resistor and capacitor.

H5TQ2G63BFR-H9C

Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
Contextual Info: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9

pwm 555 timer mosfet driver

Abstract: voltage to frequency converter using ic 555 timer 555 timer for boost converter design of PROCESS CONTROL TIMER using 555 ic 555 TIMER IC HV809 Application Note AN-H36 lm 555 timer ic Full bridge converter 200 watt ,50 KHz voltage to frequency converter using ic 555 a to d converter using ic 555 timer
Contextual Info: HV809 EL Lamp Driver HV809 Application Note AN-H36 HV809 EL Lamp Driver for Battery Powered and Off-line Equipment by Roshanak Aflatouni, Applications Engineer and Scott Lynch, Senior Applications Engineer FIGURE 2: HV809 Lamp Driver Introduction HVIN The Supertex HV809 is designed to drive large lamps at high

pwm 555 timer mosfet driver

Abstract: 555 TIMER IC voltage to frequency converter using ic 555 timer a to d converter using ic 555 timer 555 timer for boost converter PHV 10W PWM USING IC 555 TIMER 200 watt ,50 KHz Full bridge converter resistance to frequency converter using ic 555 voltage to frequency converter using ic 555
Contextual Info: HV809 Application Note AN-H36 HV809 EL Lamp Driver for Battery Powered and Off-line Equipment by Roshanak Aflatouni, Applications Engineer and Scott Lynch, Senior Applications Engineer FIGURE 2: HV809 Lamp Driver Introduction HVIN The Supertex HV809 is designed to drive large lamps at high

AD578

Abstract: AD578K AD578L AD578SD AD579
Contextual Info: a Very Fast, Complete 10- or 12-Bit A/D Converters AD578/AD579 FUNCTIONAL BLOCK DIAGRAM AD578 BIT 12 1 (AD578) 2 BIT 11 BIT 10 3 BIT 9 BIT 8 AD578/AD579 32 –15V 31 +15V 100⍀ 4 5 BIT 7 6 BIT 6 7 DAC FEATURES Complete 12-Bit ADC with Reference and Clock

AD578

Abstract: AD578K AD578L AD578SD AD579
Contextual Info: a FUNCTIONAL BLOCK DIAGRAM AD578 BIT 12 1 (AD578) 2 BIT 11 BIT 10 3 BIT 9 BIT 8 AD578/AD579 32 –15V 31 +15V 100⍀ 4 D/A CONVERTER FEATURES Complete 12-Bit A/D Converter with Reference and Clock Fast Conversion: 3 ␮s Max Buried Zener Reference for Long-Term Stability and

sine wave generator using ic 555

Abstract: PWM USING IC 555 TIMER ic1 555 pwm sinewave timing Ic4 555 voltage to pwm converter 555 pwm circuits using 555 pwm 555 timer mosfet driver 555 TIMER IC pwm controller flyback HV430
Contextual Info: HV430 Application Note AN-H42 HV430 Application Note 105 Volt RMS Ring Generator by Scott Lynch, Senior Applications Engineer Introduction Phones require at least 40VRMS for the proper detection of a ringing signal. Therefore, ringing amplitude at the phone company

sine wave generator using ic 555

Abstract: pwm 555 timer mosfet driver PWM USING IC 555 TIMER ic1 555 HV430 dc pwm generator duty cycle ring SHOW IMAGE OF lm2903 IC 555 pwm mosfet pwm circuits using 555 555 TIMER IC pwm controller flyback
Contextual Info: HV430 Application Note AN-H42 HV430 Application Note 105 Volt RMS Ring Generator by Scott Lynch, Senior Applications Engineer Introduction Phones require at least 40VRMS for the proper detection of a ringing signal. Therefore, ringing amplitude at the phone company

Delay linear sweep generator using 555 timer

Abstract: uc3843 design guide UCN5821A equivalent UCQ5801A EL7272CN MIC29302BT led blinker using 555 timer mic4426cn MIC4426AJ MIC4426CM
Contextual Info: 1997 CD-ROM Quick Reference Micrel 1997 Databook Databook.pdf Designing with Low-Dropout Voltage Regulators (LDOBk.pdf) Designing PCMCIA Power Control (PCCardBk.pdf) Acrobat Reader copyright 1987–1996 Adobe Systems Incorporated. All rights reserved.

MX-1610

Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Contextual Info: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY

Contextual Info: FMCI 718LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q

555 databook

Abstract: FMC1718LN-02 "ku band" amplifier
Contextual Info: FMC1718LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature

FLK052

Abstract: FLK052WG
Contextual Info: FLK052 WG X-kii B and Power iaAs I E I s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Condition S igillo! Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 3.75 w -65 to +175 °c °c Total Power Dissipation Tc = 25°C

Contextual Info: FLM4450-HC Internally Matched Power GaAs / / : 7 s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Pt Tc = 25°C Storage Temperature

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

Contextual Info: FLM4450-8E Internally Matched Power GaAs l 'li i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Hem Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 42.8 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature

Contextual Info: FLM1011-6F Internally M a tch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 31.2 w Total Power Dissipation Tc = 25°C pt Storage Temperature

FLC053

Abstract: FLC053WG
Contextual Info: FLC053WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC053WG is a power GaAs FET that is designed for general

FLM4450-8C

Abstract: FLM4450-4C
Contextual Info: FLM4450-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 10dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLK052WG Film ali rU JIl X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general

njm074

Contextual Info: Automotive NJM074 QUAD J-FET INPUT OPERATIONAL AMPLIFIER • PACKAGE OUTLINE ■ FEATURES ● Operating Voltage ● J-FET Input ● High Input Resistance ● Low Input Bias Current ● High Slew Rate ● Wide Unity Gain Bandwidth ● Bipolar Technology ● Operating Temperature

AD578

Abstract: AD578K AD578L AD579 ad578ln
Contextual Info: ANALOG DEVICES FEATURES Performance Com plete 12-Bit A /D Converter w ith Reference and Clock Fast Conversion: 3 jjis max Buried Zener Reference for Long Term Stability and Low Gain T.C.: ± 3 0 ppm /°C max (AD578) ± 4 0 ppm /°C max (AD579) M ax Nonlinearity: < ± 0 .0 1 2 %

FLM4450-8C

Contextual Info: FLM4450-8C FI if m - i I I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39dBm Typ. • • • • • High Gain: G -j^B = 10dB (Typ.) High PAE: r iadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q