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    3M Interconnect 3M298X-.5--50MIC

    3M POLISHING FILM 298X, 0.50 MIC
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    DigiKey 3M298X-.5--50MIC Bulk 500
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    • 1000 $4.01958
    • 10000 $4.01958
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    550MI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    QFJ032-P-R450-2

    Abstract: No abstract text available
    Text: PLASTIC LEADED CHIP CARRIER 32 PIN PLASTIC LCC-32P-M02 EIAJ code : ∗QFJ032-P-R450-2 32-pin plastic QFJ PLCC Lead pitch 50mil Package width x package length 450 × 550mil Lead shape J bend Sealing method Plastic mold (LCC-32P-M02) 32-pin plastic QFJ (PLCC)


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    LCC-32P-M02 QFJ032-P-R450-2 50mil 550mil 32-pin LCC-32P-M02) QFJ032-P-R450-2 PDF

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: c3600 CERAMIC LEADLESS CHIP CARRIER LCC 68 transistor 36c PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN036-G-S550-1 C038
    Text: LEADLESS CHIP CARRIER 36 PAD CERAMIC LCC-36C-F01 EIAJ code : WQFN036-G-S550-1 36-pad ceramic LCC Lead pitch 50mil Package width x package length 550 × 550mil Sealing method Frit seal LCC-36C-F01 36-pad ceramic LCC (LCC-36C-F01) R0.20(.008) TYP (36 PLCS)


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    LCC-36C-F01 WQFN036-G-S550-1 50mil 550mil 36-pad LCC-36C-F01) C36001SC-1-2 CERAMIC LEADLESS CHIP CARRIER c3600 CERAMIC LEADLESS CHIP CARRIER LCC 68 transistor 36c PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN036-G-S550-1 C038 PDF

    NEC A39A

    Abstract: 48pin TSOP a39a transistor a39a
    Text: Unit : mm 335±1.0 23.5±0.5 288±0.5 27.5±0.5 137.5±0.5 A' NEC LA−A39A HEAT PROOF A 0.5 0.4 5.8 1.3 15.5 13.0 1.3 2.5 6.3 1.5 SECTION A−A' 8.8 180±1.0 21.25±0.5 32.0±0.1 14.1 LA - A39A Heat Proof Conductive Plastic Applied Package Quantity 48pin Plastic TSOP 550mil


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    LA-A39A 48pin 550mil) NEC A39A 48pin TSOP a39a transistor a39a PDF

    2SC5287

    Abstract: transistor 2SC5287 DSA0016511
    Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25


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    2SC5287 MT-100 100max Pulse10) 550min 50typ 2SC5287 transistor 2SC5287 DSA0016511 PDF

    TO220 HEATSINK DATASHEET

    Abstract: 2SC5239 ATV3 transistor 800V 1A
    Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2


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    2SC5239 MT-25 100max 550min 300mA TO220 HEATSINK DATASHEET 2SC5239 ATV3 transistor 800V 1A PDF

    QFJ-32C-C01

    Abstract: No abstract text available
    Text: QUAD FLAT J-LEADED PACKAGE 32 PIN CERAMIC QFJ-32C-C01 Lead pitch 50mil Package width x package length 450 × 550mil Lead shape J bend Sealing method Cerdip 32-pin ceramic QFJ QFJ-32C-C01 32-pin ceramic QFJ (QFJ-32C-C01) 3.44±0.35 (.135±.014) 2.11(.083)REF


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    QFJ-32C-C01 50mil 550mil 32-pin QFJ-32C-C01) J32001SC-3-2 QFJ-32C-C01 PDF

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC CERAMIC LEADLESS CHIP CARRIER LCC 68 LCC Package PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN032-C-R450-1
    Text: LEADLESS CHIP CARRIER 32 PAD CERAMIC LCC-32C-A01 EIAJ code : WQFN032-C-R450-1 Lead pitch 50mil Package width x package length 450 × 550mil Sealing method Metal seal 32-pad ceramic LCC LCC-32C-A01 *Shape of PIN NO.1 INDEX : Subject to change without notice.


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    LCC-32C-A01 WQFN032-C-R450-1 50mil 550mil 32-pad LCC-32C-A01) CERAMIC LEADLESS CHIP CARRIER 64 CERAMIC LEADLESS CHIP CARRIER LCC CERAMIC LEADLESS CHIP CARRIER LCC 68 LCC Package PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN032-C-R450-1 PDF

    2SC3927

    Abstract: DSA0016508
    Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC


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    2SC3927 MT-100 100max 550min Pulse15) 105typ 2SC3927 DSA0016508 PDF

    2SC5239

    Abstract: No abstract text available
    Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 550 VEBO IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C)


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    2SC5239 100max 550min 35typ 300mA MT-25 2SC5239 PDF

    2SC4517

    Abstract: 4517A transistor 800V 1A 2sc4517a
    Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2


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    2SC4517/4517A 2SC4517 2SC4517A O220F) 100max 550min 35typ 4517A transistor 800V 1A PDF

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN032-G-R450-1 LCC-32C-F01
    Text: LEADLESS CHIP CARRIER 32 PAD CERAMIC LCC-32C-F01 EIAJ code : WQFN032-G-R450-1 32-pad ceramic LCC Lead pitch 50mil Package width x package length 450 × 550mil Sealing method Frit seal LCC-32C-F01 *Shape of PIN NO.1 INDEX : Subject to change without notice.


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    LCC-32C-F01 WQFN032-G-R450-1 50mil 550mil 32-pad LCC-32C-F01) C32017SC-2-2 15TYP CERAMIC LEADLESS CHIP CARRIER PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN032-G-R450-1 LCC-32C-F01 PDF

    Untitled

    Abstract: No abstract text available
    Text: QUAD FLAT L-LEADED PACKAGE 32 PIN CERAMIC FPT-32C-C02 Lead pitch 50mil Package width x package length 450 × 550mil Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.80mm 32-pin ceramic QFP FPT-32C-C02 32-pin ceramic QFP (FPT-32C-C02)


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    FPT-32C-C02 50mil 550mil 32-pin FPT-32C-C02) PDF

    4517A

    Abstract: 2sc4517 2SC4517A FM20
    Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 10.1±0.2 IB 1.5 A VCE(sat)


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    2SC4517/4517A 100max 550min O220F) 35typ 300mA 2SC4517 2SC4517A 4517A 2SC4517A FM20 PDF

    2SC5287

    Abstract: No abstract text available
    Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25


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    2SC5287 MT-100 100max Pulse10) 550min 50typ 2SC5287 PDF

    2SC3927

    Abstract: No abstract text available
    Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150


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    2SC3927 100max 550min Pulse15) 105typ MT-100 2SC3927 PDF

    Signetics 27c64

    Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
    Text: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read


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    27C64A 64K-bit 536-bit Signetics 27c64 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20 PDF

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


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    CY7C1009 550-mil CY7C1009 7C1009 A14C PDF

    lm4990s

    Abstract: LDA10B LM4990 LM4990LD LM4990MH LM4990MM MUA08A
    Text: LM4990 2 Watt Audio Power Amplifier with Selectable Shutdown Logic Level General Description Key Specifications The LM4990 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of


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    LM4990 LM4990 lm4990s LDA10B LM4990LD LM4990MH LM4990MM MUA08A PDF

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


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    NPT35050A 3A001b 750mA, NDS-003 PIMD3 PDF

    MA3232

    Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 BF123 CA3036 FT4017 2n1613 replacement A431 BF121 DIODE SJ 98 DM01B PDF

    transistor b1154

    Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 transistor b1154 B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12 PDF

    BSW12

    Abstract: 2n2718 2sc113 CI44 GW 9n BFW74 BFW75 BFW76 BFX53 T046
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B BSW12 2n2718 2sc113 CI44 GW 9n BFW74 BFW75 BFW76 BFX53 T046 PDF

    BF125

    Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    BD265 BD265A BD265B Y220b BD265L BD266L BD267L BF125 PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A PDF

    27c256-15

    Abstract: 27C256-20
    Text: Philips Components-Signetics 27C256 Document No. 8 5 3 -0 0 94 ECN No. 0 10 4 0 Date of Issue N ove m b e r 1 2 ,1 9 9 0 Status Pro du ct S p ecification 256K-bit CMOS EPROM 32K x 8 M e m ory P ro du cts PIN CONFIGURATION DESCRIPTION FEATURES Philips C o m p o n e n ts -S ig n e tic s 27C 256


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    27C256 256K-bit 27c256-15 27C256-20 PDF