542 TRANSISTOR Search Results

Sandisk Flash memory

Abstract: Sandisk TSOP sandisk flash controller SDTB-64 sandisk flash drive 48 pin controller SDTB-32 SanDisk TSOP 56 socket 14x14 circuit diagram sandisk 64 mb SDFCSTB
Contextual Info: Flash ChipSet Product Manual CORPORATE HEADQUARTERS 140 Caspian Court Sunnyvale, CA 94089-9820 408-542-0500 FAX: 408-542-0503 URL: http://www.sandisk.com SanDisk Corporation general policy does not recommend the use of its products in life support applications where in a

BTS542E2

Abstract: 542D2
Contextual Info: PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection · Current limitation · Short-circuit protection · Thermal shutdown

ITT 1f2 DIODE

Abstract: Zener diode 5.6 itt BTS542D BAz50
Contextual Info: SIEMENS BTS 542 E PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection

irf130

Contextual Info: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International

IRF430

Abstract: JANTX2N6762 JANTXV2N6762
Contextual Info: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International

IRF130

Abstract: JANTX2N6756 JANTXV2N6756
Contextual Info: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International

IRF330

Abstract: JANTX2N6760 JANTXV2N6760
Contextual Info: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International

Contextual Info: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International

BTS 177

Abstract: BTS 304
Contextual Info: SIEMENS BTS 542 D PRÜFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection

TO-218AB

Abstract: IST12
Contextual Info: PROFET BTS 542 D2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection · Current limitation · Short-circuit protection · Thermal shutdown

IRF230

Abstract: JANTX2N6758 JANTXV2N6758
Contextual Info: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758  HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A  The HEXFET technology is the key to International

Contextual Info: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758  HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A  The HEXFET technology is the key to International

Contextual Info: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International

LT1895-46-0125

Contextual Info: 5TH FL,NO.542-5,CHUNG CHENG ROAD, HSIN-TIEN CITY,TAIWAN. LEDTECH ELECTRONICS CORP. TEL:886-2-222186891 FAX:886-2-22181222,22182894 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT1895-46-0125 5.0mm ROUND PHOTOTRANSISTOR Approved by Checked by Prepared by

LT0395-46-0125

Abstract: LT039
Contextual Info: 5TH FL,NO.542-5,CHUNG CHENG ROAD, HSIN-TIEN CITY,TAIWAN. LEDTECH ELECTRONICS CORP. TEL:886-2-222186891 FAX:886-2-22181222,22182894 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT0395-46-0125 3.0mm ROUND PHOTOTRANSISTOR Approved by Checked by Prepared by

333E

Abstract: IRF130 JANTX2N6756 JANTXV2N6756
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.333E HEXFET JANTX2N6756 POWER MOSFET JANTXV2N6756 [REF:MIL-PRF-19500/542] [GENERIC:IRF130] N-CHANNEL Ω HEXFET 100 Volt, 0.18Ω Product Summary HEXFET technology is the key to International

IRF230

Abstract: JANTX2N6758 JANTXV2N6758
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.334E HEXFET JANTX2N6758 POWER MOSFET JANTXV2N6758 [REF:MIL-PRF-19500/542] [GENERIC:IRF230] N-CHANNEL Ω HEXFET 200 Volt, 0.40Ω Product Summary HEXFET technology is the key to International

BTS 433

Abstract: fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2
Contextual Info: • ñ23Sb05 D0fllSb2 4 Tfl SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation • Short-circuit protection

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
Contextual Info: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers

JANTX2N6762

Abstract: IRF430 JANTX2N6768 JANTXV2N6762 JANTXV2N6768
Contextual Info: Provisional Data Sheet No. PD-9.336E HEXFET JANTX2N6762 POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance

9335e

Abstract: source 5A simple IRF330 JANTX2N6760 JANTXV2N6760
Contextual Info: Provisional Data Sheet No. PD-9.335E HEXFET JANTX2N6760 POWER MOSFET JANTXV2N6760 [REF:MIL-PRF-19500/542] [GENERIC:IRF330] N-CHANNEL Ω HEXFET 400 Volt, 1.00Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance

IRF330

Abstract: JANTX2N6760 JANTXV2N6760 9335E
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.335E HEXFET JANTX2N6760 POWER MOSFET JANTXV2N6760 [REF:MIL-PRF-19500/542] [GENERIC:IRF330] N-CHANNEL Ω HEXFET 400 Volt, 1.00Ω Product Summary HEXFET technology is the key to International Rectifier’s

Zener diode 5.6 itt

Abstract: BTS542E 235L D054 BTS 542D
Contextual Info: SIEMENS BTS 542 E PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • • • • • • • • Undervoltage and overvoltage shutdown with auto-restart and hysteresis

Contextual Info: Jp j-0 rnational Provisional Data Sheet No. PD-9.336E I O R Rectifier JANTX2N6762 HEXFET POWER MOSFET JANTXV2N6762 [REF:MIL-PRF-19500/542] [GENERIC:IRF430] N- CHA NNE L 500 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi­