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    5414N Search Results

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    5414N Price and Stock

    RAF Electronic Hardware M0541-4-N

    ROUND SPACER NYLON 12MM
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    DigiKey M0541-4-N Bulk 618 1
    • 1 $1.51
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    • 100 $0.8784
    • 1000 $0.75296
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    Mouser Electronics M0541-4-N
    • 1 $1.25
    • 10 $0.903
    • 100 $0.853
    • 1000 $0.753
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    Newark M0541-4-N Bulk 1,099 484
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    • 100 $1.46
    • 1000 $1.22
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    RS M0541-4-N Bulk 9 Weeks 211
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    DB Roberts M0541-4-N
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    Master Electronics M0541-4-N
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    • 1000 $0.784
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    onsemi NTD5414NT4G

    MOSFET N-CH 60V 24A DPAK
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    DigiKey NTD5414NT4G Reel
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    onsemi NVD5414NT4G

    MOSFET N-CH 60V 24A DPAK
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    Flip Electronics NVD5414NT4G 10,000
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    JRH Electronics M85049-54-14N

    CONNECTOR BACKSHELL
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    DigiKey M85049-54-14N Bulk 1
    • 1 $250.49
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    Flip Electronics NVD5414NT4G-VF01

    MOSFET N-CH 60V 24A DPAK
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    DigiKey NVD5414NT4G-VF01 Reel 2,000
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    5414N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 5414N, 5414N Power MOSFET 24 A, 60 V Single N−Channel DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


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    PDF NTD5414N, NVD5414N NTD5414N/D

    Untitled

    Abstract: No abstract text available
    Text: 5414N, 5414N Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK Features • • • • • http://onsemi.com Low RDS on High Current Capability Avalanche Energy Specified AEC Q101 Qualified − 5414N These Devices are Pb−Free and are RoHS Compliant


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    PDF NTD5414N, NVD5414N NTD5414N/D

    Untitled

    Abstract: No abstract text available
    Text: VBO 54 IdAVM = 54 A VRRM = 800-1600 V Single Phase Rectifier Bridge Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 D Type VBO 54-08NO7 VBO 54-12NO7 VBO 54-14NO7 VBO 54-16NO7 Symbol Test Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C;


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    PDF 54-08NO7 54-12NO7 54-14NO7 54-16NO7

    Untitled

    Abstract: No abstract text available
    Text: 5414N Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 60 V LED Lighting and LED Backlight Drivers


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    PDF NTD5414N NTD5414N/D

    Untitled

    Abstract: No abstract text available
    Text: VBO 54 IdAVM = 54 A VRRM = 800-1600 V Single Phase Rectifier Bridge Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 D Type VUO 54-08NO7 VUO 54-12NO7 VUO 54-14NO7 VUO 54-16NO7 Symbol Test Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C;


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    PDF 54-08NO7 54-12NO7 54-14NO7 54-16NO7

    Untitled

    Abstract: No abstract text available
    Text: VBO 54 IdAVM = 54 A VRRM = 800-1600 V Single Phase Rectifier Bridge Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 D Type VUO 54-08NO7 VUO 54-12NO7 VUO 54-14NO7 VUO 54-16NO7 Symbol Test Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C;


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    PDF 54-08NO7 54-12NO7 54-14NO7 54-16NO7

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    VVY 40-16IO1

    Abstract: B2HKF ixys vhf 28-08io5 vgo 36-08io7 vvy40 ixys vuo 52 input id VKO 15-08io5 VUM 33-05 F1-10 F1-20
    Text: 1~ Rectifier Bridges & PFC Modules Contents 1 2 1 3 5 18 21 21 30 31 35 38 40 45 50 52 54 55 65 68 72 107 124 122 174 2000 1600 20 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1400 06 08 12 14 16 18 ● ● ● ● ● ●


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    PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    NTD5414NT4G

    Abstract: 5414N
    Text: 5414N Power MOSFET 24 Amps, 60 Volts Single N−Channel DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 60 V LED Lighting and LED Backlight Drivers


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    PDF NTD5414N NTD5414N/D NTD5414NT4G 5414N

    Untitled

    Abstract: No abstract text available
    Text: VBO 54 IdAVM = 54 A VRRM = 800-1600 V Single Phase Rectifier Bridge Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 D Type VUO 54-08NO7 VUO 54-12NO7 VUO 54-14NO7 VUO 54-16NO7 Symbol Test Conditions IdAV ¬ TC = 100°C, module IFSM TVJ = 45°C;


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    PDF 54-08NO7 54-12NO7 54-14NO7 54-16NO7

    40-12N06

    Abstract: VBO 40-08N06 160-12N07 30-14N07 160-16N07 25-16A02 VBO 24 52-08N07 VBO 22-08n08 VBO 20-16N02
    Text: 1~ Rectifier Bridges h ik â \ L -W — i - W - J ! 1~ Rectifier Bridges with Avalanche Diodes, B2U v RRM Type ► New VBO 13-12A02 VBO 13-16A02 VBO VBO VBO VBO 20-12A02 20-16A02 25-12A02 25-16A02 v 1dAV @ T1C vRMS • ^FSM 45°C 10 ms A VT0 rT "^VJM p p thJH


    OCR Scan
    PDF 13-12A02 13-16A02 20-12A02 20-16A02 25-12A02 25-16A02 13-08N02 13-12N02 13-16N02 16-12N 40-12N06 VBO 40-08N06 160-12N07 30-14N07 160-16N07 25-16A02 VBO 24 52-08N07 VBO 22-08n08 VBO 20-16N02

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Single Phase Rectifier Bridge V RSM •dAVM V RRM 1- o D V 900 1300 1500 1700 800 1200 1400 1600 VUO VUO VUO VUO 54-08N07 54-12N07 54-14N07 54-16N07 Symbol Test Conditions *dAV Tc = 100°C, module UsM TVJ = 45°C; V R= 0 £ 2 -4 ’ Maximum Ratings


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    PDF 54-08N07 54-12N07 54-14N07 54-16N07

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485