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Text: bhi.53c131 QOSTSHT ?D2 BB A P X Philips Semiconductors Product specification UHF push-pull power transistor — — — — — FEATURES — H BLV945A AMER PHILIPS/DISCRETE b^E J> ' QUICK REFERENCE DATA • Double internal input matching for easy matching and high gain
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BLV945A
MRC106
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uhf vhf booster
Abstract: UCD445 philips if catv amplifier DD32512 OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module
Text: Philips Semiconductors bbâ^^Bl DD32512 T SD H APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE ]> PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology
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DD32512
OM2070B
MCD444
hbS3T31
D03E517
uhf vhf booster
UCD445
philips if catv amplifier
OM2070B
vHF amplifier DIAGRAM
booster-amplifiers
wideband 28
HF VHF power amplifier module
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philips resistor 2322 763
Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Text: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage
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BFG97
OT223
BFG31.
OT223
philips resistor 2322 763
bfg97 scattering
BFG97
D 1413 transistor
BFG31
UBB774
PH ON 823
TRANSISTOR BFg97
24C1S
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BAV10
Abstract: BAW62 bu 11 apx
Text: • bbSB'ìBl GOSbe1^ IDI * A P X N AMER PHILIPS/DISCRETE BAV10 b^E D > ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, u ltra -high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories.
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BAV10
DO-35
BAV10
DO-35
100XL
-00mA
BAW62
bu 11 apx
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