5393 IC Search Results

6MBI450U-170

Abstract: 5393 IC ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI450U-170 Spec. No. : MS5F 5393 Fuji Electric Co.,Ltd. Matsumoto Factory Feb. 19 ’03 S.Yoshiwatari Feb. 19 ’03 S.Miyashita T.Fujihira Feb.-19 -’03 K.Yamada MS5F 5393 1 14 H04-004-07 Revised Records

25 Ohms 3 watt pot

Abstract: subminiature tubes
Contextual Info: SYLVANIAfp^ SYLVAHIA engineering data service 5393 MECHANICAL DATA QUICK REFERENC E DATA B u l b .T-3 B a s e . E8-10, Subm iniam re Button, Flexible Leads

TA75393

Abstract: TA75393P TA75393F TA75393S TA75393FB TA75393PA
Contextual Info: TOSHIBA TA7 5393 P/PA/S/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single

TA75393

Abstract: TA75393P TA75393F TA75393FB TA75393PA TA75393S 5393p
Contextual Info: TO SH IBA T A7 5393 P/PA/S/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single

5393

Abstract: CG 09G TA75393 TA75393F TA75393P TA75393P equivalent dip-8p
Contextual Info: TOSHIBA TA7 5393 P/PA/S/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single

5393

Contextual Info: TOSHIBA TA7 5393 P/PA/S/F/FB TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single power supply over a wide range of voltage.

Avago MGA-30216 app note

Abstract: ALM-31122 L54B schematic diagram 500 watt power amplifier free d ALM-31322 ALM-32120 ALM-32220 ALM-32320 MGA-30116 MGA-30216
Contextual Info: ALM-31122 1 Watt, 700MHz Driver Amplifier Design for AWS Base Transceiver Station Application Application Note 5393 Introduction Avago Technologies ALM-31122 is a high linearity 1W Power Amplifier PA with good OIP3 and PAE at 1dB GainCompression point, designed to operate from 700MHz

LB1888V

Abstract: ILB01066 lb1888 53931
Contextual Info: 注文コード No. N 5 3 9 3 A LB1888V No. N 5 3 9 3 A 91002 半導体ニューズ No.5393 とさしかえてください。 モノリシックディジタル集積回路 LB1888V 3 相ブラシレスセンサレス モータドライバ LB1888V は3 相ブラシレスセンサレスモータドライバ IC であり、特に 8mm VTR 用のシリンダモータ駆動に最

5393

Abstract: TA75393P TA75393F TA75393 TA75393S c1406 TA75393FB TA75393PA dip-8p
Contextual Info: TO SH IBA _TA75393 P/PA/S/F/FB TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single

N5399

Contextual Info: IM IC O N D U C TQ R tm 1N5391 -1 N5399 Features 1.0 min • 1.5 am pere operation at TA = 7 0 ° C with no therm al runaway. 25.4 Dimensions in inches (mm) • High current capability. 0.300 (7.62) 0.230 (5.84) • Low leakage. DO-15 C O LO R BAND D EN O TES C ATHO DE

LCM 4004

Abstract: IN 5406 IN 5408 D0-201AD R250-B 250h 250s 250L 250L-A NCD103M50Z5UTR.250LSF
Contextual Info: ft09 17 88 MICRO ELECTRONICS CORP_ MICRO EL EC TRON IC S CORP " 02 82000629 'Q- o { ~ o / l E| bOTl?ññ OODDbST b | General Purpose Rectifiers V RRM I« U V) (A) IN 4001 IN 4002 IN 4003 IN 4004 IN 4005 IN 4006 IN 4007 50 100 200 400 600 800 TOOO IN

Contextual Info: IM IC O N D U C TQ R tm 1N5391 -1 N5399 Features 1.0 min • 1.5 am pere operation at TA = 70°C with no therm al runaway. 25.4 Dimensions in inches (mm) • High current capability. 0.300 (7.62) 0.230 (5.84) • Low leakage. DO-15 C O LO R BAND D EN O TES C ATHO DE

1N5391-1N5399

Abstract: 1N5391 1N5399
Contextual Info: 1N5391 – 1N5399 W TE PO WE R SEM IC O ND U C TO RS 1.5A SILICON RECTIFIER Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! C Case: Molded Plastic

Contextual Info: 1N5391/S - 1N5399/S VISHAY 1.5A RECTIFIER I[l IT E M Il pow eb seh co nw icto r/ Features Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

JANTX1N

Abstract: 971B
Contextual Info: Microsemi Zener Regulator Diodes ] ZEN M icrosem i D ivision Package O utline j Type Mil Spec Pow er Data S heet ID W Vz (V) Izt (m A) (« ) Zzk <n) Zzt °= f Part N um ber VR (V) Toi. (+/-%) 1N970A Scottsdale DO-35 STD 5392 0.4 24 5.2 33 750 5 18.2 10 1N970A (D 0 7 )

N5399

Contextual Info: SEMICONDUCTOR i 1N5391 -1 N5399 Features 1.0 iron • 1.5 ampere operation at TA = 70°C with no thermal runaway. 25.4> Dimensions in inches (mm • High current capability. 0.300 17.621 0.230 (5.84) • Low leakage. DO-15 COLOR BAND DENOTES CATHODE 0.140 (3.56)

N5399

Abstract: 1N5391-1N5399
Contextual Info: IMICGNDUCTQR 1N5391 - 1 N5399 Features • 1.5 ampere operation at TA = 70 °C with no thermal runaway. 1.0 rain 25.4 D im e n sio n s in inches (mm) • High current capability. 0.300 (7.62) 0.230 (5.84) • Low leakage. DO-15 COLOR BAND DENOTES CATHODE

1N5391

Abstract: 1N5399
Contextual Info: IMICONDUCTOR tm 1N5391 - 1 N5399 Features 1.0 min • 1.5 am pere operation at TA = 70° C with no therm al runaway. A • High current capability. 25.4 Dimensions in irches (mm) 0.300 (7.62) 0.230 (5.84) • Low leakage. DO-15 COLOR BAND DENOTES CATHODE

Contextual Info: SM5391 SM5397 THRU SURFACE MOUNT GLASS PASSIVATED RECTIFIERS FEATURES: MELF / DO-213AB • Ideal for surface mount applications • Easy pick and place • Built-in strain relief • Glass passivated Chip SOLDERABLE ENDS 1st BAND D2 MECHANICAL DATA Case : Molded plastic use UL 94V-0 recognized flame

in5397

Abstract: IN5402 IN5406 IN4936 IN4937 IN4007 IN5395 IN5404 IN5393 in4002
Contextual Info: E H A ELECTRONICS CORP 02E D 343fl=]ñfl 0G00014 G • F E M T ^ o l- O T - o S - a ! SILICON RECTIFIERS Type Max V RPR Max V RM S Ì Max V DCB Type Max V RPR Max V RMS Max V DCB 6.0 AM PERES Package: R6 1.0 AM PERE Package: DO-41 IN4001 50 35 50 PX6A01 50

PBP205

Abstract: PBL405 IN4007 PBP203 Fema Electronics PB101M IN5822 PB157M IN5400 712 PB104M
Contextual Info: .5537299 □5 FEMA ELEC TR O N IC S D E | 3 5 3 7 5 ^ C OR P 02E 00014 D Y - ò t ~ / 3 / - 1 SILICON RECTIFIERS Type Max V RPR Max V RMS Max V DCB Type Max V RPR Max V RMS Max V DCB 6.0 AMPERES Package: R6 1.0 AMPERE Package: DO-41 IN4001 50 35 50

Contextual Info: OP-421/883 QUAD LOW-POWER OPERATIONAL AMPLIFIER P r e c is io n M o n o lit h ic s Inc. 1.0 SC O P E This specification covers the detail requirements for a quad low-power operational amplifier. It is highly recommended that this data sheet be used as a baseline for new military or

diode IN5399

Abstract: IN5399 in5391 diode IN5391 N5399 diode IN5391 diode rectifier in5399 3 Ampere silicon Diode IN5397 20 ampere diode
Contextual Info: DIODES LIMITED IN5391 TO IN5399 SERIES FAI RAC RES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847255 SEMICONDUCTOR MANUFACTURERS 1.5 AMPERE SILICON RECTIFIERS With “ LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency