kps-5130pd7c
Abstract: KPS-3227SP1C KA-2735ESGC KM2520CGCK03 KPS5130 KPT-1608SURCK SMD 3528 RGB KPB-3025SRCGKC KA-4040SURC kpa-1606
Text: P 2-3 HIGH CURRENT LED LAMPS P 4-10 SURFACE MOUNT LED LAMPS P 21 THROUGH HOLE LED LAMPS P 22-23 SMD INFRARED EMITTING DIODES P 24 SMD PHOTOTRANSISTORS P 25 AMBIENT LOGHT SENSOR & COLOR SENSOR P 26-33 SMD TAPE SPECIFICATIONS P 34-36 RECOMMENDED SOLDERING PATTERN
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KAF-5060
KAD1-9090
350mA
KAF-5060PBGSURKVGAC
KAF-5060PBGSEEVGAC
KPD-3224
KPED-3528
KA-3528A
KPED-3820
KPTB-1612
kps-5130pd7c
KPS-3227SP1C
KA-2735ESGC
KM2520CGCK03
KPS5130
KPT-1608SURCK
SMD 3528 RGB
KPB-3025SRCGKC
KA-4040SURC
kpa-1606
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sot-223 93
Abstract: 3301 sot-89 3301-1000 5201 sot223
Text: Package Information Package Types QFP Quad Flat Package The following are the package types and widths offered by Holtek. Pin Count DIP (Dual In-line Package) Pin Count Package Width Package Width 44, 48 10mm ´ 10mm 52 14mm ´ 14mm 8, 14, 16, 18, 20 300mil
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300mil
400mil
600mil
1mm/20pitches.
sot-223 93
3301 sot-89
3301-1000
5201 sot223
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on semiconductor marking code 518
Abstract: No abstract text available
Text: SEMICONDUCTOR KIC7508~7560M/T5 TECHNICAL DATA Analog CMOS Integrated Circuits IC for CMOS Detector Monolithic IC KIC75* Series This IC functions in a variety of CPU systems and other logic systems, to detect supply voltage and reset the system accurately when the power is
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KIC7508
7560M/T5
KIC75*
on semiconductor marking code 518
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SSOP48W
Abstract: SSOP20N 18w sot23 transistor TSSOP16 MO-150 MO-187 MO-220 MS-013 SSOP20S 103001 for mouse
Text: Package Information Package Types The following are the package types and widths offered by Holtek. Pin Count DIP Dual In-line Package 80, 100, 128 14mm ´ 20mm 208 28mm ´ 28mm Pin Count Package Width 8, 14, 16, 18, 20 300mil 24, 28, 32, 40, 42 600mil 28, 32, 40 (Ceramic)
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300mil
600mil
SSOP48W
SSOP20N
18w sot23 transistor
TSSOP16
MO-150
MO-187
MO-220
MS-013
SSOP20S
103001 for mouse
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KA-2735
Abstract: KA-2735ESGC KM-23YD-F KA-2735SURKMGC
Text: SURFACE MOUNT LED LAMPS KA-2735 KM-23-F Part No. Material λD nm Lens Type Iv (mcd) @20mA Min. Typ. View ing Angle Dimension 2θ θ 1/2 2.7mm x 3.5mm (Bi-Color) GaAsP/GaP 625 7 30 120° water clear KA-2735ESGC GaP 568 7 30 InGaAlP 635 70 200 KA-2735SURKMGC
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KA-2735
KM-23-F
KA-2735ESGC
KA-2735SURKMGC
KM-23ID-F
KM-23EC-F
KM-23SRD-F
KM-23SRC-F
KM-23YD-F
KM-23YC-F
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ZF SOT23
Abstract: No abstract text available
Text: SOT-23 SURFACE MOUNT LED LAMP Part Number: KM-23VGC-Z-F PRELIMINARY SPEC Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z SOT-23 PACKAGE SURFACE MOUNT LED LAMP. The Green source color devices are made with InGaN Light
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OT-23
KM-23VGC-Z-F
2000PCS
DSAH1062
JUL/11/2007
ZF SOT23
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MMBF4091
Abstract: 4092 4093 PN4092 4091
Text: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample
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PN4091
MMBF4091
PN4092
PN4093
MMBF4092
MMBF4093
OT-23
4092
4093
4091
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Untitled
Abstract: No abstract text available
Text: 19-1586; Rev 0; 7/00 Low-Voltage, Step-Down DC-DC Converters in SOT23 Internal synchronous rectification greatly improves efficiency and eliminates the external Schottky diode required in conventional step-down converters. Both devices also include internal digital soft-start to limit
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250mA
MAX1734)
MAX1733)
MAX1733/MAX1734
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Philips ECG125
Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr
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Q00720S
ECG109
ECG110A
ECG110MP
ECG112
ECG113A
72OLARITY
OT-23
SP-92
ECG615A
Philips ECG125
t75 hv diode
ecg125 diode
ECG125
ECG605
Z6 DIODE
ECG558
ECG156
ECG584 schottky
ECG1151
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diode ECG125
Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time
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bb53R2fi
ECG109
ECG110A
ECG110MP
ECG113A
ECG114
1N415C
1N415E
1N416C
1N416E
diode ECG125
CI 3060 elsys
ci 3060
ECG577
Z6 DIODE
DIODE GENERAL PURPOSE DET 200 PRV SCR
ECG117A
ECG576
ECG584 schottky
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MA4T64500
Abstract: 4558 MA4T64535 557 sot143 micro X
Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV
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4T64500
MA4T64533
MA4T64535
OT-23
MA4T64539
OT-143
MA4T645XX
OT-143)
MA4T64500
4558
MA4T64535
557 sot143
micro X
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DIODE S2E
Abstract: No abstract text available
Text: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery
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T-39-01
110MP
100pA
T0220
OT-23
DIODE S2E
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MA4T64400
Abstract: low noise transistors MA4T645 MA4T644
Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t
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A4T64400
MA4T64435
MA4T64433
OT-23
MA4T64539
OT-143
4T644X
OT-143)
MA4T64400
low noise transistors
MA4T645
MA4T644
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1235Z
Abstract: 35Z diode KV1226 KV1236Z KV1236 toko VARIABLE CAPACITORS V1420 KV1235Z TOKO sot-23 Toko KV1226
Text: 3bE » TOKO AMERICA INC • TDbTlaBS D0D1S73 S ■ TAI T 'O l'l^ TO K O DI0DES Variable Capacitance Diode Application For AM, FM, UHF AM FM t f — KffliÉSU— K • KV1230Z • KV1234Z • AM Variable Capacitance KV1235Z KV1236Z • KV1250 • KV1260 •
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D0D1S73
KV1226
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1250
KV1260
KV1260-2
KV1280
1235Z
35Z diode
KV1236
toko VARIABLE CAPACITORS
V1420
TOKO sot-23
Toko KV1226
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NF1100
Abstract: No abstract text available
Text: BCW31 NPN EPITAXIAL SILICON TRAN SISTO R G EN ERAL PU RPO SE TRANSISTOR SOT-23 A BSO LU TE MAXIMUM RATINGS TA=25'C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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BCW31
OT-23
KST5088
10/iA,
NF1100
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MMBT4123
Abstract: transistor sot-23 marking L8
Text: SAM S UN G SEM ICO NDUCTOR INC MMBT4123 1ME 0 | ^4145 00072t*S 5 | NPN EPITAXIAL SILICON TRANSISTOR T-aq-tì GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Co#ector-Base Voltage Collector-Emitter Voltage
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MMBT4123
OT-23
100MHz
100MHz
10OKHz
100KHz
transistor sot-23 marking L8
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Untitled
Abstract: No abstract text available
Text: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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bb53T31
DD34bM3
BF550
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Substrate alumina
Abstract: No abstract text available
Text: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12
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BAW56LT1*
OT-23
O-236AB)
BAW56LT1
Substrate alumina
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KV1234Z
Abstract: No abstract text available
Text: 23 TOKO DIODES ¥ 4* - K Variable Capacitance Diodes Application For AM Layout KV1225 KV1226 KV1230Z KV1234Z KV1235Z KV1236Z KV1260 KV1260-2 KV1260M KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3 Tun. Tun. VCO Tun. Tun. Tun. Tun. Tun. Tun. Tun. Tun. VCO Tun.
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KV1225
KV1226
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1260
KV1260-2
KV1260M
KV1280-1
KV1234Z
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transistor sot-23 marking L8
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC ! MMBT4123 | 7 1 i.U « e BOOM M . s j NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBT4123
OT-23
transistor sot-23 marking L8
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fet n-channel pin configuration
Abstract: transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
Text: 71 lDfl2b 0 0 b 7 ô li5 LTD « P H I N Philips Semiconductors BSS138 Data sheet status Prelim inary specification date of issue September 1990 FEATURES N-channel enhancement mode vertical D-MOS FET PIN CO NFIGURATION PINNING - SOT223 PIN • Low threshold voltage
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BSS138
OT223
MBB180
fet n-channel pin configuration
transistor 537 b 360
DMOSFET
Silicon N-Channel Junction FET sot23
vertical mosfet
BSS138
MBB180
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BF550
Abstract: transistor marking code 325 0024-B
Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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24LMC]
BF550
OT-23
BF550
transistor marking code 325
0024-B
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DIODE SW-05
Abstract: No abstract text available
Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40
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110MP
OT-23
200MHz
T0220
b43125T
0P03SSÃ
DIODE SW-05
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common anode schottky to220
Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
Text: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)
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110MP
OT-23
200MHz
T0220
QQ0355Ã
common anode schottky to220
diode d07
anode common fast recovery diode
c 92 M - 02 DIODE
3a ultra fast diode
D041
SE 40 RECTIFIER
Super matched pair
519 SOT23
anode common fast recovery diode dual
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