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    52UL Price and Stock

    Panasonic Electronic Components EEE-FN1A152UL

    CAP ALUM 1500UF 20% 10V SMD
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    DigiKey EEE-FN1A152UL Reel 1,500 500
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    EEE-FN1A152UL Cut Tape 243 1
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    EEE-FN1A152UL Digi-Reel 1
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    Avnet Americas EEE-FN1A152UL Reel 21 Weeks 1,000
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    Mouser Electronics EEE-FN1A152UL 979
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    Newark EEE-FN1A152UL Reel 1,000
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    EEE-FN1A152UL Cut Tape 1,000
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    Master Electronics EEE-FN1A152UL
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    NXP Semiconductors OM13552UL

    EVAL BOARD FOR NX5P2190
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    Semtech Corporation SC652ULTRT

    IC LED DRV RGLTR PWM 25MA 14MLPQ
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    APEM Inc 3646NFX1052UL

    TOGGLE SWITCH 3600NF 12A 28VDC
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    DigiKey 3646NFX1052UL Bulk 15
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    Mouser Electronics 3646NFX1052UL
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    Newark 3646NFX1052UL Bulk 15
    • 1 $89.7
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    RS 3646NFX1052UL Bulk 16 Weeks 15
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    Master Electronics 3646NFX1052UL
    • 1 $48.33
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    Tektronix Inc 2-ULTIMATE

    Benchtop Oscilloscopes Ultimate Bundle for 2 Series MSO, includes 2-Source, 2-Serial, Node Locked
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    Mouser Electronics 2-ULTIMATE
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    Find more 52UL price and stock on Findchips.com

    52UL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY27UF082G2A

    Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
    Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UF 256Mx8bit/128Mx16bit) HY27UF082G2A HY27UF162G2A HY27UF082G2A HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb hynix nand hynix nand spare area PDF

    K9F1G08U0A-PCB0

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns K9F1G08U0A-PCB0 PDF

    K9F4G08U0M

    Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		K9K8G08U1M K9F4G08U0M K9F4G08U0M-Y K9F4G08U0M K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB PDF

    HY27UH088G2M

    Abstract: No abstract text available
    Text: HY27UH088G 2/D M Series 8Gbit (1Gx8bit) NAND Flash Document Title 8Gbit (1Gx8bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary Jun. 13. 2005 Preliminary Jun. 14. 2005


    Original     		HY27UH088G Table11) HY27UH088G2M PDF

    hy27uf082

    Abstract: hy27uf082G
    Text: Preliminary HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary


    Original     		HY27UF 256Mx8bit 128Mx16bit) hy27uf082 hy27uf082G PDF

    hy27uf082G

    Abstract: No abstract text available
    Text: HY27UF 08/16 2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Dec. 2004 Preliminary May. 23. 2005 Preliminary Aug. 09. 2005


    Original     		HY27UF 256Mx8bit 128Mx16bit) hy27uf082G PDF

    HY27UF084

    Abstract: hynix nand flash 4Gb HY27UF084G2M 52-ULGA
    Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UF084G2M 512Mx8bit) HY27UF084G2M HY27UF084 hynix nand flash 4Gb 52-ULGA PDF

    HY27UG088G5M

    Abstract: HY27UG088G5 HY27UG088G2M HY27U*G5M HY27UG088G HY270 HY27UG HY27UG088GDM HY27UG088G2M-TP WP 39
    Text: Preliminary HY27UG088G 2/5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G2M HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UG088G HY27UG088G2M HY27UG088G5M HY27UG088GDM HY27UG088GDM HY27UG088G5M HY27UG088G5 HY27UG088G2M HY27U*G5M HY270 HY27UG HY27UG088G2M-TP WP 39 PDF

    K9F2G08U0M-PCB0

    Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
    Text: K9K4G08U1M K9F2G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9K4G08U1M K9F2G08U0M K9XXG08UXM 200mV K9F2G08U0M-PCB0 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M PDF

    nand hamming code 2k bytes

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		K9K4G08U1M K9F2G08U0M K9F2G16U0M 9F2G08U0M nand hamming code 2k bytes PDF

    K9F4G08U0B

    Abstract: K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0
    Text: Advance FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0 PDF

    K9F4G08U0M

    Abstract: two-plane program nand
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.


    Original     		K9K8G08U1M K9F4G08U0M K9F4G08U0M two-plane program nand PDF

    hy27uf082g2b

    Abstract: hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code
    Text: 1 HY27UF 08/16 2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UF 256Mx8bit) hy27uf082g2b hy27uf082G hy27uf082 hy27uf082G2 HY27UF082G2B-F hynix nand hynix nand PROGRAMMING hynix nand flash 2gb 52-ULGA hynix nand edc spare area code PDF

    Untitled

    Abstract: No abstract text available
    Text: HY27UF084G2M Series 4Gbit 512Mx8bit NAND Flash 4Gb NAND FLASH HY27UF084G2M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UF084G2M 512Mx8bit) HY27UF084G2M PDF

    HY27UG

    Abstract: hynix nand HY27UG084G2M
    Text: Preliminary HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005


    Original     		HY27UG 512Mx8bit 256Mx16bit) hynix nand HY27UG084G2M PDF

    HYNIX HY27UH08AG5M

    Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
    Text: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UH08AG 16Gbit HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM HYNIX HY27UH08AG5M HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA PDF

    hy27uf082

    Abstract: hy27uf082G2 hy27uf082G HY27UF082G2A HY27UF162G2A hynix nand 2G hynix nand flash 2gb 2gbit HY27UF hynix nand flash 4Gb
    Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UF 256Mx8bit/128Mx16bit) HY27UF082G2A HY27UF162G2A hy27uf082 hy27uf082G2 hy27uf082G HY27UF082G2A HY27UF162G2A hynix nand 2G hynix nand flash 2gb 2gbit hynix nand flash 4Gb PDF

    hynix nand flash otp

    Abstract: HY27UG088G HY27UG088G5M HY27UG088G5 hynix nand 8G uLGA hynix nand flash HY27UG088
    Text: HY27UG088G 5/D M Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G5M HY27UG088GDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UG088G HY27UG088G5M HY27UG088GDM HY27UG088GDM hynix nand flash otp HY27UG088G5M HY27UG088G5 hynix nand 8G uLGA hynix nand flash HY27UG088 PDF

    512M x 8 Bit NAND Flash Memory

    Abstract: samsung 2GB Nand flash samsung 8Gb nand flash K9F4G08U0M-PCB0 8bit nand flash K9F4G08U0M 52ULGA K9K8G08U1M K9XXG08UXM-XIB0 K9F4G08
    Text: K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9K8G08U1M K9F4G08U0M K9XXG08UXM 512M x 8 Bit NAND Flash Memory samsung 2GB Nand flash samsung 8Gb nand flash K9F4G08U0M-PCB0 8bit nand flash K9F4G08U0M 52ULGA K9K8G08U1M K9XXG08UXM-XIB0 K9F4G08 PDF

    HY27UG084G2M

    Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
    Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary


    Original     		HY27UG 512Mx8bit 256Mx16bit) HY27UG084G2M HY27UG164G2M 52-ULGA hynix nand 4G HY27UG084G2 HY27UG084GDM HY27UG084G PDF

    HYNIX HY27UH08AG5M

    Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
    Text: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		HY27UH08AG 16Gbit HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM HYNIX HY27UH08AG5M HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 hynix nand flash Hynix 16Gb Nand flash PDF

    K9F2G08R0A

    Abstract: No abstract text available
    Text: K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F2G08R0A K9F2G08U0A K9F2G08UXA /apps/Eudora/Attach/272-55085-0000 SG200602672 K9F2G08R0A PDF

    512M x 8 Bit NAND Flash Memory

    Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
    Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34


    Original     		K9K4G08U1M K9F2G08U0M K9F2G16U0M 512M x 8 Bit NAND Flash Memory K9F2G16U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0 PDF

    K9F1G08U0AYCB0

    Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
    Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns 200mV K9F1G08U0AYCB0 K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08 PDF