52897 Search Results

AM28F020

Contextual Info: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time

AM29F040B

Contextual Info: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology

AM27C040

Abstract: AM27C040-120 AM27C040-150 AM27C040-90 AM27C040-15 EC75
Contextual Info: FINAL Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard — <10 µA typical CMOS standby current

am29f040b

Abstract: Publication# 19957 Am29F040
Contextual Info: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology

Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: FINAL A M D ii Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard ■ 100% Flashrite programming

EIA364

Abstract: EIA-364
Contextual Info: JUNE 30,1997 TEST REPORT #97236 QUALIFICATION TESTING FLE/FTSH SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. Contech Research CERTIFICATION This is to certify that the evaluation described herein was

AM29F040B

Abstract: AM29F040B-70 AM29F040B-55 AM29F040B-1505
Contextual Info: A M D tl Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically

AM28F256

Abstract: A1H Transistor AM28F256-150PC
Contextual Info: FINAL Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e

Contextual Info: FINAL A M D ii Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

AM28F256A

Abstract: Am29Fxxx
Contextual Info: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

29f040b

Abstract: 29F040B70 AM29F040B
Contextual Info: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ Embedded Algorithms — Minimizes system level power requirements — Embedded Erase algorithm automatically

Contextual Info: AM D ii Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: FINAL A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

AM27X010

Abstract: DA79
Contextual Info: FINAL Am27X010 1 Megabit 128 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming ■ High noise immunity — Fully tested and guaranteed ■ Low power dissipation

omron 8567

Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Contextual Info: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830

Diode T3 D46

Abstract: 3220S EN528 DIODE k020 LC75883E LC75883W SQFP80
Contextual Info: Ordering number : EN5289A CMOS LSI LC75883E, 75883W No. 5289A SAmro 1/3-Duty LCD Display Drivers with Key Input Function i H H Overview Package Dimensions T h e L C 7 5 8 8 3 E an d L C 7 5 8 8 3 W a re 1/3-duly d y n am ic unit: mm L C D display drivers that can directly drive LC D s with up

transistor S57

Abstract: transistor S56 s34 diode S-57 lc75883 EN528
Contextual Info: Ordering number : EN5289A CMOS LSI LC75883E, 75883W 1/3-Duty LCD Display Drivers with Key Input Function Overview Package Dimensions The LC75883E and LC75883W are 1/3-duty dynamic LCD display drivers that can directly drive LCDs with up to 171 segments and can control up to four generalpurpose output ports. These LSIs also incorporate a keyscan circuit that accepts input from up to 30 keys to

AM27C010

Abstract: 032-32-Pin AM27C010 Revision A
Contextual Info: FINAL A M D ii Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns ■ — Typical program m ing tim e of 16 seconds Low power consumption ■ Latch-up protected to 100 mA from -1 V to

hot electron devices

Abstract: AM28F512A
Contextual Info: FINAL Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

AMD am2 socket pinout

Abstract: AMD socket AM2 pinout amd am2 pinout amd am2 6000 pin diagram AMD am2 socket pin amd am2 socket pin diagram AMD am2 socket pinout VOLTAGE hot electron devices pinout AM2 AMD socket AM2 pinout
Contextual Info: FINAL Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

IN3064

Abstract: Am29F00N Am29F002N AM29F002
Contextual Info: PRELIMINARY Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements