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    511000B Price and Stock

    EAO AG 82-4151.1000.B001

    SWITCH PB SPDT 3A 240V
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    DigiKey 82-4151.1000.B001 Tray 32 1
    • 1 $25.95
    • 10 $22.388
    • 100 $19.58238
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    Newark 82-4151.1000.B001 Bulk 2 1
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    TME 82-4151.1000.B001 5
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    Sager 82-4151.1000.B001 1
    • 1 $21.38
    • 10 $21.38
    • 100 $18.57
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    EAO AG 82-4151.1000.B002

    SWITCH PB SPDT 3A 240V
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    DigiKey 82-4151.1000.B002 Tray 11 1
    • 1 $25.95
    • 10 $22.388
    • 100 $19.58238
    • 1000 $17.5368
    • 10000 $17.5368
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    Newark 82-4151.1000.B002 Bulk 2 1
    • 1 $21.65
    • 10 $19.67
    • 100 $17.13
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    TME 82-4151.1000.B002 5
    • 1 -
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    Sager 82-4151.1000.B002 1
    • 1 $21.38
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    • 100 $18.57
    • 1000 $17.38
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    EAO AG 82-5151.1000.B001

    SWITCH PB SPDT 3A 240V
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    DigiKey 82-5151.1000.B001 Tray 10 1
    • 1 $21.53
    • 10 $18.575
    • 100 $16.54875
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    Newark 82-5151.1000.B001 Bulk 2 1
    • 1 $22.3
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    TME 82-5151.1000.B001 5
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    EAO AG 82-6951.1000.B004

    PUSHBUTTON, MOMENTARY, 22MM, ALU
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    DigiKey 82-6951.1000.B004 Bag 5 1
    • 1 $60.07
    • 10 $51.815
    • 100 $44.655
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    Newark 82-6951.1000.B004 Bulk 5
    • 1 $62.2
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    RS 82-6951.1000.B004 Bulk 5 10 Weeks 1
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    TME 82-6951.1000.B004 5
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    Sager 82-6951.1000.B004 1
    • 1 $53.05
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    EAO AG 82-5951.1000.B001

    PUSHBUTTON, MOMENTARY, 19MM, ALU
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    DigiKey 82-5951.1000.B001 Bag 5 1
    • 1 $56.82
    • 10 $49.01
    • 100 $42.2383
    • 1000 $39.80016
    • 10000 $39.80016
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    Newark 82-5951.1000.B001 Bulk 5
    • 1 $58.56
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    RS 82-5951.1000.B001 Bulk 5 10 Weeks 1
    • 1 $52.84
    • 10 $44.92
    • 100 $40.69
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    TME 82-5951.1000.B001 5
    • 1 -
    • 10 $36.03
    • 100 $36.03
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    • 10000 $36.03
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    Sager 82-5951.1000.B001 1
    • 1 $49.94
    • 10 $49.94
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    511000B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    511000BJ7

    Abstract: No abstract text available
    Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time


    Original     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 511000BJ7 PDF

    511000

    Abstract: 51100 P-SOJ-26/20-1 511000BJ-70 Q67100-Q1056 Q67100-Q518 256KDRAM
    Text: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time


    Original     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 511000 51100 P-SOJ-26/20-1 511000BJ-70 Q67100-Q1056 Q67100-Q518 256KDRAM PDF

    Q67100-Q954

    Abstract: Q67100-Q955 Q67100-Q956 Q67100-Q957 362140GS-70
    Text: 2M x 36-Bit Dynamic RAM Module HYM 362140S/GS-60/-70 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


    Original     		36-Bit 362140S/GS-60/-70 18-bit) Q67100-Q954 Q67100-Q955 Q67100-Q956 Q67100-Q957 362140GS-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W 0 R D S X 9 BIT DYNAM IC RAM PRELIMINARY MODULE DESCRIPTION The T H M 9 1 0 0 0 B S /B S G /B L is a 1,048,576 words by 9 bits dynam ic RAM m odule which assem bled 9 pcs of TC 511000B J on the printed circuit board. The THM 91000BS / BSG / BL is optim ized for


    OCR Scan     		511000B 91000BS THM91000BS SG/BL-60 THM91020BL-60 B-157 THM91OOOBS/BSG/BL-60 B-158 THM91000BS/BSG/BL-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M X 1 -B it D y n a m ic R A M H Y B 5 1 1 0 0 0 B -6 0 /-7 0 /-8 0 H Y B 5 1 1 0 0 0 B L -6 0 /-7 0 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e HYB 511000B/BL-60


    OCR Scan     		511000B/BL-60) 511000B/BL-70) 511000B-80) 1000B/BL-60) 1000B/BL-70) 1000B-80) PDF

    M511000B

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION T h e O K I M S C 2 3 1 2 B -x x Y S 9 /K S 9 is a fu lly d e co d ed 1 ,0 4 8 ,5 7 6 -w o rd x 9 -b it C M O S D y n a m ic R a n d o m A ccess M em ory M od u le co m p o sed o f n in e 1-M b D R A M s in S O J M S M 511000B p ack ag es m ou n ted w ith


    OCR Scan     		MSC2312B-xxYS9/KS9 576-Word 511000B SC2312B-xxYS9: SC2312B-xxKS9: M511000B PDF

    DQ712

    Abstract: 511000BJ-70
    Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version


    OCR Scan     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 DQ712 511000BJ-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60


    OCR Scan     		511000B-60/-70/-80 511000BL-60/70 1000B/BL-60) 1000B/BL-70) 511000B-80) 511000BL-60) 511000BL-70) PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M X 1 -Bit Dynamic RAM HYB 511 000B-60/-70/-80 HYB 511000BL-60/-70 Advanced Inform ation • • 1 048 576 w ords by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 5 1 1000B/BL-60 70 ns access time 130 ns cycle tim e (HYB 5 1 1000B/BL-70)


    OCR Scan     		000B-60/-70/-80 511000BL-60/-70 1000B/BL-60) 1000B/BL-70) 511000B-80) 511000B/BL-60) 511000B/BL-70) PDF

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W ORDS x 8 BIT D Y N A M IC RAM M O DULE DE SC R IP TIO N T he T H M 8 1 0 0 0 B S /B S G /B L is a 1,048,576 w ords by 8 b its dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000B J on the p rin te d c ircu it board. T he T IÏM 81000B S / BSG / BL is optim ized for


    OCR Scan     		511000B 81000B 81000BS- THM81OOOBS/BSG/BL-60 THM81020BL-60 THM81000BS/BSG/BL-60 PDF

    bl 9 a2

    Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
    Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The 511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the 511000B/BL is OKI’s CMOS silicon gate process technology.


    OCR Scan     		MSM511000B/BL_ 576-Word MSM511000B/BL cycles/64ms MSM5110OOB/BL 242i4D 00177fa3 bl 9 a2 18-PIN 20-PIN 26-PIN ZIP20-P-400 PDF

    MCM511000BJ60

    Abstract: CM511000 256Kx1 dRAM MCM511000 MCM511000BZ80 mcm511000bj L1219
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 511000B MCM51L1000B 1Mx1 CMOS Dynamic RAM Page Mode The M C M 511000B is a 0.8p CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CMOS silicon-gate process


    OCR Scan     		511000B MCM511000B 300-mi! 100-mil MCM51L1000B MCM511000BJ60 MCM5110OOBJBO MCM51L1000BJ60 CM511000 256Kx1 dRAM MCM511000 MCM511000BZ80 mcm511000bj L1219 PDF

    511000B/BL-60

    Abstract: hyb 511
    Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60


    OCR Scan     		5110OOB/BJ/BZ-60/-70/-80 511000BUBJL/BZL-60/-70 511000B/BL-60) 511000B/BL-70) 511000B-80) 511000B/BL-60 hyb 511 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 A d v a n c e d In fo rm a tio n • 1 048 576 w o rd s by 1 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in


    OCR Scan     		511000BJ-50/-60/-70 511000BJL-50/-60/-70 PDF

    M511000

    Abstract: m511000b MCM511 MCM511000BJ60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511000B MCM51L1000B 1M x 1 CMOS Dynamic RAM Page Mode T he M CM 511000B is a 0.8n C M O S high-speed dynam ic random access memory. It is organized as 1,048,576 one-bit w ords and fabricated with C M OS siiicon-gate


    OCR Scan     		511000B MCM511000B MCM51L1000B OTOD010 Number---------------511Q00B 51L100QB MCM511000BJ60 MCM51L1000BJ60 MCM511000BJ60R2 M511000 m511000b MCM511 PDF

    q523

    Abstract: 511000B-60 Q431 Q522
    Text: SIEMENS 1M x 1-Bit Dynamic RAM H YB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60 70 ns access time 130 ns cycle time (HYB 511000B/BL-70)


    OCR Scan     		511000B/BL-60) 511000B/BL-70) 511000B-80) 511000BL-60) 511000BL-70) q523 511000B-60 Q431 Q522 PDF

    OB35

    Abstract: 511000BZ-60 BL-70 bzl60
    Text: S IE M E N S 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000B/BJ/BZ-60/-70/-80 HYB 511000BL/BJL/BZL-60/-70 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60


    OCR Scan     		511000B/BJ/BZ-60/-70/-80 511000BL/BJL/BZL-60/-70 511000B/BL-60) 511000B/BL-70) 511000B-80) OB35 511000BZ-60 BL-70 bzl60 PDF

    oa-1160

    Abstract: MSC23136 2k240
    Text: O K I Semiconductor M SC 23136B/BL-XXBS 12/DS 12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23136B/BL -xxBS12/D S12 is a fully decoded 1,048,576-word x 36-bit CM OS Dynamic Ran­ dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages and


    OCR Scan     		MSC23136B/BL-xxBS12/DS12 576-Word 36-Bit MSC23136B/BL-xxBS12/DS12 MSM514400B/BL) MSM511000B/BL) 72-pin oa-1160 MSC23136 2k240 PDF

    Untitled

    Abstract: No abstract text available
    Text: TopTech Semiconductors. Siemens DK> Siemens AG Österreich Postfach 326 1031 Wien 8 (01 71711-5661 El 1372-10 Fax (01) 71711-5973 Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vie. 3121 S (03) 4207111 02 30425 Fax (03) 4 2072 75 Siemens AG


    OCR Scan     		16-bit 32200S-60/-70/-80 361120GS-60/-70/-80 36-bit 94500S/L-60/-70/-80 B166-H6574-X-X-7600 B166-H6657-X-X-7600 B166-H6657-G1-X-7600 B192-H6641-X3-X-7400 B166-B6336-X-X-7600 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23236B/BL-XXBS24/DS24 2,097,152-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23236B / BL-xxBS24 /D S24 is a fully decoded 2,097,152-w ord x 36-bit CMOS Dynamic Ran­ dom Access Memory Module composed of sixteen 4-Mb DRAMs in SOJ M SM 514400B/BL packages and


    OCR Scan     		MSC23236B/BL-XXBS24/DS24 152-Word 36-Bit MSC23236B BL-xxBS24 152-w 514400B/BL) 511000B/BL) 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2 M X 36-Bit Dynamic RAM Module HYM 362120S-60/-70/-80 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


    OCR Scan     		36-Bit 362120S-60/-70/-80 18-bit) Q05557fl PDF

    5117400

    Abstract: sem 2500 7212 tube
    Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1


    OCR Scan     		P-SOJ-26/20-1 J-26/20-5? P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-26/24-1 1000BJ 514256BJ 514100BJ 514400BJ 5117400 sem 2500 7212 tube PDF

    Siemens HYB 41256-12

    Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
    Text: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347


    OCR Scan     		511000B-60 511000B-70 511000B-80 511000BJ-60 511000BJ-70 511000BJ-80 511000BJL-60 511000BJL-70 511000BL-60 511000BL-70 Siemens HYB 41256-12 41256-12 dram 41256-15 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23236B/BL-XXBS24/DS24 2,097,152-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23236B/BL -xxBS24/D S24 is a fully decoded 2,097,152-word x 36-bit CMOS Dynamic Ran­ dom Access Memory M odule composed of sixteen 4-M b DRAM s in SOJ M SM 514400B/BL packages and


    OCR Scan     		MSC23236B/BL-XXBS24/DS24 152-Word 36-Bit 23236B/BL -xxBS24/D 514400B/BL) 511000B/BL) 72-pin PDF