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    50N10 Search Results

    50N10 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation 100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
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    50N10 Price and Stock

    Infineon Technologies AG IPD050N10N5ATMA1

    MOSFET N-CH 100V 80A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD050N10N5ATMA1 Digi-Reel 8,514 1
    • 1 $3.15
    • 10 $2.047
    • 100 $3.15
    • 1000 $1.06756
    • 10000 $1.06756
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    IPD050N10N5ATMA1 Cut Tape 8,514 1
    • 1 $3.15
    • 10 $2.047
    • 100 $3.15
    • 1000 $1.06756
    • 10000 $1.06756
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    IPD050N10N5ATMA1 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.01875
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    Avnet Americas IPD050N10N5ATMA1 Reel 10,000 20 Weeks 2,500
    • 1 -
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    • 10000 -
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    IPD050N10N5ATMA1 Ammo Pack 1
    • 1 -
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    Mouser Electronics IPD050N10N5ATMA1 4,444
    • 1 $2.7
    • 10 $1.88
    • 100 $1.43
    • 1000 $1.07
    • 10000 $1.01
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    Newark IPD050N10N5ATMA1 Cut Tape 2,822 1
    • 1 $2.53
    • 10 $2.1
    • 100 $1.5
    • 1000 $1.12
    • 10000 $1.12
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    IPD050N10N5ATMA1 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.06
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    Rochester Electronics IPD050N10N5ATMA1 1
    • 1 $1.13
    • 10 $1.13
    • 100 $1.06
    • 1000 $0.9605
    • 10000 $0.9605
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    Chip1Stop IPD050N10N5ATMA1 Cut Tape 3,752
    • 1 $2.42
    • 10 $2.01
    • 100 $1.6
    • 1000 $1.13
    • 10000 $1.01
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    EBV Elektronik IPD050N10N5ATMA1 21 Weeks 2,500
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    Vishay Siliconix SQD50N10-8M9L_GE3

    MOSFET N-CH 100V 50A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD50N10-8M9L_GE3 Digi-Reel 7,653 1
    • 1 $2.49
    • 10 $1.599
    • 100 $2.49
    • 1000 $0.80712
    • 10000 $0.80712
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    SQD50N10-8M9L_GE3 Cut Tape 7,653 1
    • 1 $2.49
    • 10 $1.599
    • 100 $2.49
    • 1000 $0.80712
    • 10000 $0.80712
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    SQD50N10-8M9L_GE3 Reel 6,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.70788
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    onsemi FDI150N10

    MOSFET N-CH 100V 57A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDI150N10 Tube 3,038 1
    • 1 $2.93
    • 10 $2.93
    • 100 $2.93
    • 1000 $1.19212
    • 10000 $1.19212
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    Avnet Americas FDI150N10 Tube 17 Weeks 800
    • 1 -
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    • 100 -
    • 1000 $1.2054
    • 10000 $1.1232
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    Richardson RFPD FDI150N10 800
    • 1 -
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    • 1000 $1.19
    • 10000 $1.19
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    Avnet Silica FDI150N10 18 Weeks 50
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    EBV Elektronik FDI150N10 19 Weeks 50
    • 1 -
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    Infineon Technologies AG IPD50N10S3L16ATMA1

    MOSFET N-CH 100V 50A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD50N10S3L16ATMA1 Digi-Reel 1,304 1
    • 1 $2.71
    • 10 $1.749
    • 100 $2.71
    • 1000 $0.89537
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    IPD50N10S3L16ATMA1 Cut Tape 1,304 1
    • 1 $2.71
    • 10 $1.749
    • 100 $2.71
    • 1000 $0.89537
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    Newark IPD50N10S3L16ATMA1 Cut Tape 2,334 1
    • 1 $2.31
    • 10 $1.57
    • 100 $1.12
    • 1000 $0.862
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    Rochester Electronics IPD50N10S3L16ATMA1 8,832 1
    • 1 $0.9213
    • 10 $0.9213
    • 100 $0.866
    • 1000 $0.7831
    • 10000 $0.7831
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    Chip1Stop IPD50N10S3L16ATMA1 Cut Tape 8,979
    • 1 $1.52
    • 10 $0.986
    • 100 $0.671
    • 1000 $0.534
    • 10000 $0.51
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    Infineon Technologies AG BSC050N10NS5ATMA1

    MOSFET N-CH 100V 16A/100A TDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSC050N10NS5ATMA1 Digi-Reel 1,180 1
    • 1 $3.23
    • 10 $2.105
    • 100 $3.23
    • 1000 $1.1015
    • 10000 $1.05663
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    BSC050N10NS5ATMA1 Cut Tape 1,180 1
    • 1 $3.23
    • 10 $2.105
    • 100 $3.23
    • 1000 $1.1015
    • 10000 $1.05663
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    Avnet Americas BSC050N10NS5ATMA1 Reel 5,000 18 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.8805
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    Mouser Electronics BSC050N10NS5ATMA1 25,124
    • 1 $1.75
    • 10 $1.36
    • 100 $1.13
    • 1000 $1.06
    • 10000 $1.03
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    Newark BSC050N10NS5ATMA1 Cut Tape 6,799 5
    • 1 $2.22
    • 10 $1.77
    • 100 $1.57
    • 1000 $1.57
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    Rochester Electronics BSC050N10NS5ATMA1 5,000 1
    • 1 $1.17
    • 10 $1.17
    • 100 $1.1
    • 1000 $0.9945
    • 10000 $0.9945
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    Chip1Stop BSC050N10NS5ATMA1 Cut Tape 4,668
    • 1 $1.19
    • 10 $1.18
    • 100 $1.18
    • 1000 $1.17
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    EBV Elektronik BSC050N10NS5ATMA1 19 Weeks 5,000
    • 1 -
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    Find more 50N10 price and stock on Findchips.com

    50N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N100

    Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
    Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol


    Original     		PDF 50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    Untitled

    Abstract: No abstract text available
    Text: 50N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener-protected SuperMESH 5 Power MOSFET in a Max247 package Datasheet — preliminary data Features Order code VDS 50N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area


    Original     		PDF STY50N105DK5 Max247 STY50N105DK5 Max247

    SSD50N10

    Abstract: MosFET
    Text: 50N10 50A , 100V , RDS ON 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSD50N10 O-252 SSD50N10 50N10 19-Oct-2012 MosFET

    SSU50N10

    Abstract: MosFET
    Text: 50N10 54A , 100V , RDS ON 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-263 The 50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSU50N10 O-263 SSU50N10 50N10 9-Dec-2011 MosFET

    rr0805

    Abstract: RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512
    Text: Product Approvals - CECC Type Specification Style MFR3 MFR3 MFR4 MFR4 MFR5 MFR5 BS CECC 40101-019 GX GZ FX FZ EX EZ 1R0 1R 01R0 1R0 9R1 9R1 - MFR4 MFR4 MFR5 MFR5 BS CECC 40101-803 BK BC CK CC 10R 10R 9R1 9R1 FA025 FA05 FA1 FA94 BS CECC 40101-019 FX EX DX CX


    OCR Scan     		PDF FA025 50n-100K 2-121Kfl 100i2-100Kn 2-100K 2-100KC2 2-100KQ MIL-R-55342 M55342/6 rr0805 RGR07 RNC60H Resistor 22 ohms rb60 resistor MIL-R-39007 rr1206 MIL-R-26 RW79 MIL-R-26 MIL-R-39005 RR2512

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan     		PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100