Untitled
Abstract: No abstract text available
Text: GaAMs INFRARED EMITTER -TLN222 TENTATIVE DATA TLN222 INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION U n it in mm High radiant power :Po = 14mW (TYP.)at Ip = 50mA Wide radiant pattern : 6$ = ±21” (TYP.) High speed response :tr, tf=15ns (TYP.)
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TLN222
TLN222)
10T7250
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TLN226
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TLN226 TO SHIBA INFRARED LED G a A M s INFRARED EMITTER TLN226 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION High radiant power Po = 18mW TYP. at Ip = 50mA Narrow radiant pattern 0 * = ± 13° (TYP.) High speed response tr, tf= 30ns (TYP.)
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TLN226
TLN226
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100ria
Abstract: 25V6K RN5305 2N4494
Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V
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2N3707
MPS3707
2N3708
MPS3708
2N3709
MPS3709
2N3701
MPS3710
2N3711
MPS3711
100ria
25V6K
RN5305
2N4494
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FJ CHEMICALS
Abstract: No abstract text available
Text: TO SH IB A TENTATIVE TLN225 TOSHIBA INFRARED LED GaAfAs INFRARED EMITTER TI N 1 1 * • ■ H F' 'm INFRARED LED FOR 5PACE-OPTICAL-TRANSMI5SION High radiant power Po = 18mW Typ. at IF = 50mA ± 21° (Typ.) Wide radiant pattern High speed response U nit in mm
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TLN225
FJ CHEMICALS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TLN226 TOSHIBA INFRARED LED GaAMs INFRARED EMITTER TLN226 Unit in mm INFRARED LED FOR 5PACE-OPTICAL-TRANSMI5SION Po = 18mW TYP. at Ip = 50mA High radiant power Narrow radiant pattern 0 * = ± 13° (TYP.) tr, tf= 30ns (TYP.) High speed response
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TLN226
100kHz,
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Untitled
Abstract: No abstract text available
Text: SHF-0186, -0186K DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET October, 1995 Features - AIGaAs/GaAs H e te ro stru ctu re FET T ech n o lo g y - High Pow er Added E fficie n cy: Up to 40% - High A sso cia te d G ain: 16dB T ypical at 2GHz - A vailable in P lastic o r Flanged Ceram ic Package
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SHF-0186,
-0186K
DC-12
Id-150mA)
50mAj
150mA,
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80m60
Abstract: No abstract text available
Text: TO S H I B A -CDISCRETE/OPTOJ 9097250 T O S H IB A Sb DE § 10^7250 0007347 4 CDI S C R E T E /O PTO J? J - 2/ / SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm 15.9MAX. POWER AMPLIFIER APPLICATIONS. gf3.8±0.2 FEATURES: • Complementary to 2SD716.
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2SD716.
2SB686
80m60
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TLN221
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TLN221 TO SHIBA INFRARED LED G a A M s INFRARED EMITTER TLN221 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION High radiant power : Po = 18mW TYP. at Ip = 50mA Wide radiant pattern : d% = ±21° (TYP.) High speed response : tr, tf= 30ns (TYP.)
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TLN221
TLN221
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O7AG
Abstract: TLN223
Text: TOSHIBA TENTATIVE TLN223 TOSHIBA INFRARED LED GaAMs INFRARED EMITTER TLN223 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION o.7±ag High radiant power Po = 18mW TYP. at Ip = 50mA Narrow radiant pattern 0 * = ± 13° (TYP.) High speed response tr, tf= 30ns (TYP.)
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TLN223
O7AG
TLN223
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Untitled
Abstract: No abstract text available
Text: N aan a oaivj. ËJ # B S + fr S '^ ç ü ô i f t i o o o t f p y $ d r fô w o s : m m m w t o 5 4 - * 3 f f l # 8 0 ) ± m r ) f S ¥ l : * Í t ' n W Í 1 ÍS I 5 < ¥ » : I í W ? ¿ a#8 ^ ± m oos : u & is g w r% 9 + H H % 96~06 : s ® ^ 2 v^ a z + o fr : K S
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106kpa,
106kpa
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UP050CH101
Abstract: CE400 UP050B103 p050y ep050 UP050CH221 marking s350 dd0006 UP050CH220J
Text: T v - WU ' J — ' í7 H > x > 1í' AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. -2 5 ~ + 8 5 °C L ' g S t 5 B ? o aq < 7 » í f c f r ' ñ J i É V1F£<, n % k ® & T y 7 , £ j* —.X feiÄ'J'' • C la s s 1 p n li[l]iS D S M i$ 'ttiS iE S t> ')i|> ^ IS ^ t4 < D S S ;'ib o B,
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TLN227
Abstract: No abstract text available
Text: TOSHIBA TLN227 TENTATIVE TO SHIBA INFRARED LED G a A M s INFRARED EMITTER TLN227 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION 1 .5 ± 0.2 High radiant power Po = 18mW TYP. at Ip = 50mA Narrowest radiant pattern d ± = ± b ° (TYP.) High speed response
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TLN227
TLN227
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