LT 13765
Abstract: No abstract text available
Text: u im LT1375/LT1376 TECHNOLOGY 1.5A, 500kHz Step-Dow n S w itchin g R eg ulato rs FCflTURCS DCSCM PTIOfl • Constant 500kHz Switching Frequency The LT 1375/LT1376 are 500kHz monolithic buck mode switching regulators. A 1.5A switch is included on the die along with all the necessary oscillator, control, and logic
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LT1375/LT1376
500kHz
1375/LT1376
R61RT6D
LT1074/LT1076
100kHz,
LTC1148
LTC1149
LT 13765
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hh 004 f
Abstract: KIA6901F KIA6901P
Text: KIA6901P/F SEMICONDUCTOR TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT DC MOTOR SPEED CONTROLLER FEATURES • Wide operation voltage range : 1.8 ~8V • Possible to make applicable sets compact because of minimum number of external parts required. • Easy to adjust speed.
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KIA6901P/F
KIA6901P
KIA6901F
150mA
100mA
hh 004 f
KIA6901F
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L2791-03
Abstract: No abstract text available
Text: f Epoxy-sealed Package LEDs Epoxy potting offers high reliability These LEDs are mounted on a metal stem package and sealed with a clear epoxy resin. They feature high-speed response and a wide emission angle. Various types are available, including red emitting diodes that allow easy optical axis alignment and infra
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L7558)
L2791-03)
L2791-03
L2388
L1909,
L1915,
L1939,
L2656,
L2690,
L4100,
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Untitled
Abstract: No abstract text available
Text: NJU7283 Series BATTERY BACKSW I T CH E R UP P R E L I M I N A L Y GENERAL DESCRIPTION PACKAGE OUTLINE The NJU7283 s e r ie s I t c o n ta in s is a B a tte r y B ack-up S w itc h e r. d u a l v o lta g e r e g u la to r s , t r ip le v o lta g e d e te c
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NJU7283
NJU7283XM
NJU7283XV
15niA
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3906 TRANSISTOR
Abstract: transistor pnp 3906 small signal transistor marking codes
Text: Central CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP Semiconductor Corp. SURFACE MOUNT ULTRAmini™ DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS FEATURES: • ULTRAmini™ SPACE SAVING PACKAGE • TWO NPN 3904 or TWO PNP (3906) TRANSISTORS IN A SINGLE PACKAGE
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CMKT3904
CMKT3906
CMKT3946
CMKT3904
CMKT3906
CMKT3946
OT-363
3906 TRANSISTOR
transistor pnp 3906
small signal transistor marking codes
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2SD922
Abstract: No abstract text available
Text: 2SD922 #^nap 'M±'<r7 -Y=7 >ï>X$ T R IP L E D IF F U S E D P LA N ER T Y P E U LT R A H IG H p T R A N S IS T O R U B T ) IN D U S T R IA L U SE PO W ER S U P P L Y -rnummmm • • Outline Drawings : Features • h F E ^ 'Ît t - a ^ ' Ultra highyS1 • hpEWJ—T I/ t '-cA4<£v.'
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2SD922(
50itiA
2SD922
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SOT-23 CEB
Abstract: marking code PLI D 795 marking code LG
Text: Central" CMPT6517 NPN CMPT6520 PNP Semiconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT6517, CMPT6520 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack
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CMPT6517
CMPT6520
CMPT6517,
OT-23
CMPT6517:
CMPT6520:
20MHz
CMPT6517)
CMPT6520)
SOT-23 CEB
marking code PLI
D 795
marking code LG
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WWI SOT23
Abstract: and/ojp+431
Text: Central CMPT3640 S w m lc o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3640 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for saturated switching applications.
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CMPT3640
CMPT3640
OT-23
50itiA
WWI SOT23
and/ojp+431
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Untitled
Abstract: No abstract text available
Text: Central « CZT5338 Sem iconductor Corp. NPN SILICON POWER TRANSISTOR POWER 223 DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely
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OT-223
CZT5338
CZT5338
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YTS4123
Abstract: YTS4125
Text: YTS4123 SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: • Low Leakage Current : I^gQ=50nA Max. IEBO=-’0nA (Max.) @ V q B=20V @ V e b =3V • Low Saturation Voltage : vCE(sat)=0-3v(Max-) @ Ic=50mA, IB=5mA
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YTS4123
YTS4125
100MHz
100pA
YTS4123
YTS4125
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Untitled
Abstract: No abstract text available
Text: A M I A Su b sid ia ry of G o u ld Inc. S2559A/B/E/F DTMF TONE GENERATOR Features □ W ide Operating Supply Voltage Range: 3.5 to 13.0 Volts A,B 2.5 to 10 Volts (E,F) □ Low Power C M O S Circuitry Allow s Device Power to be Derived Directly from the Telephone Lines or
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S2559A/B/E/F
58MHz)
2559E
S25S9
579545MHz
3400Hz
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2SC16
Abstract: 2sc1625 2SC1624 k1005 2SA8150
Text: I j ^ X B F m S C R E T E / O P T O } 2 S C 1 6 2 4 1 2 S C 1 6 2 5 , 9097250 TOSHIBA Sh DE I TDTTSSD GD074S3 3 SILICON NPN PLANAR TYPE 3 ô ü " 0 7 ‘ tî»3 DISCRETE/OPTO 0 7^33-07 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 1 0 l3 M A X . 0 3 -6 ± 0 -2
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GD074S3
2SC1624)
2SA814
2SA815.
2SC1624
2SC1625
2SC16
2SC1624
k1005
2SA8150
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AKS TI
Abstract: hh 004 f IM50 KIA6901F KIA6901P
Text: KIA6901P/F SEMICONDUCTOR TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT DC MOTOR SPEED CONTROLLER FEATURES • Wide operation voltage range : 1.8 —8V • Possible to make applicable sets compact because of minimum number of external parts required. • Easy to adjust speed.
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KIA6901P/F
KIA6901P
KIA6901F
1150mA
150mA
100mA
AKS TI
hh 004 f
IM50
KIA6901F
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b1185
Abstract: b1184 y206
Text: Transistors Power Transistor -6 0 V, - 3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) ►External dim ensions (Units: mm) LOW VcE(sat}. VcE(sat) = —0 .5 V (Typ.) (Ic / I b 2) = - 2 A /- 0 .2 A ) Com plem ents the 2 S D 1 7 6 0 / 2 S D 1 8 6 4 /2 S D 1 7 6 2 .
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2SB1184/2SB1243/2SB1185
96-128-B57)
2SB1184
2SB1243
2SB1185
2SB1184)
2SB1243)
2SB1185)
b1185
b1184
y206
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OE304J
Abstract: No abstract text available
Text: 0 K I SEMI CONDUCTOR GROUP 23E i • b724S40 0007-na □ .3/im Surface -emitting "LED DESCRIPTION OKI O E 3 0 4 J is 1.3/im In G a A s P /ln P su rfa c e em itting L E D d eve lo p ed a s light so u rce for o p tica l L A N sy ste m s and o p tica l equipm ent.
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L724E40
Qa0711S
OE304J
10//W
50/im
100MHz
12emperature
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Untitled
Abstract: No abstract text available
Text: Central CZT2680 Semiconductor Corp. SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching
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CZT2680
OT-223
500mA
100mA,
500mA,
50itiA
OT-223
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71E1237
Abstract: No abstract text available
Text: SbE D 7TET237 OD B 't t RB S C S -T H O M S O N ¿ 7 / s g s 26T •SGTH T- ZS-J? I LH1061 - thomson DOUBLE POLE HIGH-VOLTAGE SOLID-STATE RELAY ADVANCE DATA AN AT & T PRODUCT ■ HIGH VOLTAGE IC FABRICATED IN A DIE LECTRIC ISOLATION PROCESS ■ OPTICAL COUPLING BETWEEN INPUT AND
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7TET237
LH1061
200mA
200few
DIP-20
0Q31bb1
DIP-24
71E1237
71E1237
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