50FIS Search Results

J1 3009-2

Abstract: str 2105 DYNAMIC RAM CROSS REFERENCE melco APD mitsubishi mac 40 L-12 M5M44C258J-10 H-L9956-A
Contextual Info: M IT S U B IS H I LSIs M 5 M 4 4 C 2 5 8 P , J , L - 1 0 , - 1 2 , •I S S T A T IC C O L U M N M O D E 1 0 4 8 5 7 6 - B I T 2 6 2 1 4 4 - W O R D B Y 4 - B IT D Y N A M IC R A M DESCRIPTIO N Th is is a fa m ily o f 2 6 2 1 4 4 -w o r d by 4 -b it d y n a m ic R A M s ,

input 220v and output 4v

Abstract: optron AT10N 220Vc
Contextual Info: POTENTIOMETER ISOLATED TRANSMITTER 7 S4-PT SERIES FEATURES • Accuracy ± 0.1 % RO. ■ Input p o te n tio m e te r tota resistance 5 0 Q ~ 10KQ 0 — 1 0 0 % Steady voltage, current and low ripple ou tpu t ■ Plug-in typ e M □ MODEL: S4 - PT - NO.

analog devices 118a

Abstract: three stage Instrumentation Amplifier having gain 610J 610L AC1040 Model 610L 79PR100
Contextual Info: ANALOG D E V IC E S Economy, Wideband, Low Noise, Low Drift Instrumentation Amplifier FEATURES Bandwidth Virtually Constant: 100kHz @ G = 1 0 0 V /V Guaranteed Low IMoise: 2|UV p-p max 610IL Low D rift: 0 .5 /iV /°C max (610L) Nonlinearil:y: 0.01% max CMR: 86dB min - C M V: ± 1 0 V

557bb

Contextual Info: 7 9-0230; Rev V, 3/96 J V W Y X A J V X C alibrated, Quad, 12-Bit Voltage-Output DACs w ith S erial In te rfa c e Each DAC has a d o u ble-b u ffere d input, organized as an input register follow ed by a DAC register. A 16-bit serial w ord is used to load data into each input/D AC

TMS 2370

Abstract: ZP1400 ZP1006A ZP1006 ZP1300 ZP1220 ZP100 zp1000 ZP1015A ZP1200
Contextual Info: / Transhield ZP1000 and ZP1000A surge suppressors are silicon diffused junction pn devices having unidirectional positive clamping characteristics. Devices are available having tolerances on the nominal breakdown voltages of ± 10% ZP1000 series and ± 5%

signetics 2681

Contextual Info: Signetics 2681 Dual Asynchronous Receiver/Transmitter DUART Product Specification Military M icroprocessor Products 28-PIN CONFIGURATION DESCRIPTION FEATURES The Signetics 2681 Dual Universal Asynchronous Receiver/Transmitter (D UA R T) is a single-chip M O S-LSI com­

digital to analog converter interfacing with 8051

Contextual Info: Preliminary spécification Philips Semiconductors CMOS single-chip 8-bit microcontroller 83C576/87C576 FEATURES • OTP package available • 80C51 based architecture - 8k x 8 ROM 83C576 • EPROM/OTP versions can be programmed in circuit • Software Reset

Contextual Info: International I , i • I M R Rectifier PD -5.058B p r e l im in a r y "HALF-BRIDGE" IGBT INT-A-PAK GA 200 T S 60 U Ultra-Fast Speed IGBT Feat ures V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

CXD1156Q

Abstract: ICX026AK CXD1251Q CXd1156 ICX027AK ICX026 ICX027 CX01 sony CXD115
Contextual Info: SONY? C X D 1 1 5 6 Q /R Timing Generator IC for ICX026/027 Description 4 8 p in Q F P P lastic CXD1156Q/R is a tim in g g e n e ra to r tC fo r CCD im a g e rs ICX026AK/AL and ICX027AK/AL. Features • • • • NTSC/CCIR Field accu m ula tion mode C olor/Black and W hite mode

Contextual Info: International IQ R Rectifier PD - 5.047B PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Fe at ur es • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GSRU15040

Abstract: TWX910-950-1942 General Semiconductor Industries GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040A QSRU15040 ML3500
Contextual Info: SÛUARE D CO/ GENERAL TS _39J_859Q_GENERAL ^ D • ÔSESSÜâ QQD21Û2 SEMICONDUCTOR 4 95D 02182 GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040 GSRU15040A General ^ Semiconductor • Industries, Inc • 50UHREnCDM PHW Y 7^33 -/.T ” HIGH POWER NPN S W ltc fl P /U S ^ ttt TRANSISTORS

AEROVOX

Abstract: EN32400 Aerovox RBPS power invertor failure analysis IGBT
Contextual Info: Presented at PCIM Conference in Nürnberg, Germany, June 1996. 1996 IEEE. Reprinted, with permission, from Power Conversion, May 1996 Proceedings, p. 347-357. EXPANDING THE SAFE OPERATING AREA OF POLYPROPYLENE DIELECTRIC IGBT SNUBBER CAPACITORS Ralph M. Kerrigan

Contextual Info: J V \J Y X \J V \ fiP Compatible 14-Bit D/A Converter _ General Description _Features The AD7536 is a high performance CMOS monolithic 14-bit digital-to-analog converter DAC that is opti­ mized and specified to operate as a bipolar output

88c681

Abstract: 8086 timing diagram IC 8085 XR88C681CJ44 pin diagram of IC 74LS373 explain the 8288 bus controller 88c681j 8085 intel microprocessor block diagram 80586 8085 schematic with hardware reset
Contextual Info: XR-88C681 CMOS Dual Channel UART DUART August 1997-2 FEATURES Two Full Duplex, Independent Channels Asynchronous Receiver and Transmitter Quadruple-Buffered Receivers and Dual Buffered Transmitters Programmable Stop Bits in 1/16 Bit Increments Internal Bit Rate Generators with More than 23 Bit

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

Contextual Info: TO S H IBA TD 62381 P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD 6 2 3 8 1 P, TD SILICON MONOLITHIC 62381F 8CH LOW SATURATIO N SIN K DRIVER The TD62381P and TD62381F are comprised of eight NPN low saturation drivers. These devices are specifically designed for multiplexed digit driving of eight digit

D405

Abstract: alps 103 20KA-1 BP 104 FAS
Contextual Info: UESTCODE SEMICONDUCTORS 3RE D «370^55 0005355 5 W U E S B 7^¿LT-¿Ü • WESTCODE SEMICONDUCTORS D405CH02-12 Capsule Thyristor The D405C series thyristors feature low turn-on loss, regenerative and interdigitated gating, mounted in a cold-weld capsule. High di/dt capability. Low on-state voltage.

Contextual Info: * /wT SGS-THOMSON 7 / M iig m i g T O M ( g § _ M 2 7 C 8 0 0 8 Megabit (1 Meg x 8 or 512K x 16 UV EPROM and OTP EPROM • FAST ACCESS TIME: 90ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 8 Megabit MASK ROM COMPATIBLE

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

Contextual Info: fcfc* Ì. ? 19-0049; Rev 0; 10/92 í / k iy jx i/ i/ i Palm top Com puter and Flash M em ory Power-Supply Regulators G e n e ra l D e s crip tio n The MAX717-MAX721 provide three improvements over prior-art devices. Physical size Is reduced - th e high switch­

Contextual Info: LINEAR T EC HN OLOGY CORP L i n t A 2DE D Ü TECHNOLOGY F€ R T U R € S S51fl4bfl 0003117 fl • r~ 7 ? -/r LT1057/LT.1058 Dual and Quad, JFET Input Precision High Speed Op Amps D € S C M P T IO ft ■ 14V/ps Slew Rate 10V// sMin. The LT1057 is a matched J F E T input dual op amp in the

Contextual Info: 19-1162;Rev0; 12/96 w i y i x i > k i Low- Voltage, CMOS Analog Multiplexers/Switches with Enable Inputs and Address Latching Features ♦ Pin Compatible with 74HC4351174HC4352/74HC4353 The MAX4530/MAX4531/MAX4532 operate from a sin­ gle supply of +2V to +12V, or from dual supplies of

88C681

Abstract: 68C681 explain the 8288 bus controller 88c681j 80286 schematic 8085 schematic with hardware reset
Contextual Info: XR-88C681 CMOS Dual Channel UART DUART August 1997-2 FEATURES Two Full Duplex, Independent Channels Asynchronous Receiver and Transmitter Quadruple-Buffered Receivers and Dual Buffered Transmitters Programmable Stop Bits in 1/16 Bit Increments Internal Bit Rate Generators with More than 23 Bit

westcode ct

Abstract: CH18FYO R600 R600C ALPS 102
Contextual Info: 3^Z lilESTCODE SEMICONDUCTORS » • ^70^^55 OODSMM^ □ ■ lilE S B T ^ Z y -« ^ / lAfESTCODE SEMICONDUCTORS R600CH16-21 Capsule Thyristor The R600C series thyristors feature low turn-on loss, regenerative and interdigitated gating mounted in a cold-weld capsule. High di/dt capability. Low on-state voltage.