505-524 TRANSISTOR Search Results

A502C

Abstract: A504C TTL 555 a529
Contextual Info: fl MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortransistor logic designed for general purpose digital applica­ tions. The family has a medium operating speed 20 MHz clock rate , good e xternal noise

CA521

Abstract: 576/C
Contextual Info: MOTOROLA INTEGRATED CIRCUITS 500 Series 400 Series TTL I integrated circuits comprise a family of transistortra n s is to r logic d e sign e d for general purpose digital applica­ tions. The family has a medium operating speed 20 MHz clock ra te , go o d e x te rn a l n o ise

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

510H

Abstract: 511H 512H 524H 525H RJ24J3AA0PT
Contextual Info: BACK RJ24J3AA0PT 1/3.2-type Interline Color CCD Area Sensors with 1 310 k Pixels RJ24J3AA0PT • Package : 16-pin shrink-pitch DIP [Plastic] P-DIP016-0500C Row space : 12.70 mm DESCRIPTION The RJ24J3AA0PT is a 1/3.2-type (5.60 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

Contextual Info: MAXIMUM RATINGS Rating Value Supply Voltage - Continuous SUHL/TTL +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V.n +5.5 Vdc Output Voltage - Vout +5.5 Vdc Operating Temperature Range -55 t o +125 °C Storage Temperature Range -65 t o +150 °c Maximum Junction Temperature

502 nand

Contextual Info: LANSDALE SEMICONDUCTOR 17E D • 531^03 QDODSTS 7 ■ T~£Z-Q1 "T-Sl'OR T~H3-i5 T - M 07-07 T-V6-01-13 T-V6-07-08 - Rating Supply Voltage - Continuous 500/550 Series Vdc +8.0 Supply Operating Voltage Range MOTOROLA INTEGRATED CIRCUITS 400 Series 0 to +75 ° C

LA 4301

Contextual Info: LA N S D A L E S E M I C O N D U C T O R 32E D • £3^003 O O O G B M R T ■ LTE T-43-01 MAXIMUM RATINGS Rating Value +8.0 Vdc 4.5 to 6.0 Vdc fnput Voltage - V ln +5.5 Vdc Output Voltage - Voul +5.5 Vdc Operating Temperature Range -55 to +125 °C Storage Temperature Range

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

ov 780 image

Abstract: 160i 510H 511H 512H 524H 525H LZ23J3N
Contextual Info: SHARP SPEC No. ISSUE: C C 1 0 5 0 0 3 May. 28 1998 To ; PRELIM I NARY SPECIFICATIONS Product Type 1/2. 7-type 6. 72mm Interline Color CCD Area Sensor with 1310k Pixels Model No. LZ2 3 J 3N ^This specifications contains 27 pages including the cover and appendix.

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

nec 2412

Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

REMA

Abstract: granat 216 Sonneberg DIODE ga TESLA transistor Kombinat VEB A 301 transistor KF 507 tesla 516 maa 550 service-mitteilungen
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R I E V E R T R I E B R U N D F U N K U N D F E R N S E H E N JUL./AUG. 19 7 6 m SEITE 01-10 inämiy 1R A D io -teievlsion 1 GRANAT 516 Ein Exponat der Leipziger Frühjahrsmesse 1976, das in einer kleinen Menge noch im III. Quartal an den Handel ausgeliefert wird, war die

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

FZK101

Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Contextual Info: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

sot-363 702

Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

NEC D 586

Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FE3A

Abstract: H8S/2110 h8s-2110b TF256
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

LTspice

Abstract: 23/zoom 505 schematic
Contextual Info: M A NU A L , M E T HO D S A ND A P P L I CAT I O N S SIMULATOR THE LTSPICE IV THE LTSPICE IV 1st edition Swiridoff Verlag ISBN: 978-3-89929-258-9 SIMULATOR GILLES BROCARD MANUAL, METHODS AND APPLICATIONS Preface by Mike Engelhardt 1st edition Preface It is an honor to write a preface for Gilles Brocard. I appreciate his work writing this book and hope you benefit from